The category is 'Memory'
Memory (30)
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- Supply Current-Max:
0.31 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Note | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT48LC8M16A2F4-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M16A2F4-75:G | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | VFBGA | 8 X 8 MM, VFBGA-54 | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.63 | No | 3.3 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 54 | S-PBGA-B54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 8MX16 | 3-STATE | 1 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M8A2FB-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M8A2FB-75:G | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TFBGA | 8 X 16 MM, PLASTIC, FBGA-60 | BGA60,8X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.53 | No | 3.3 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 16 mm | 8 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC8M16A2TG-75IT:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M16A2TG-75IT:G | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.28 | Compliant | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 3.6 V | 3 V | 1 | 150 mA | SYNCHRONOUS | 0.31 mA | 16 b | 8MX16 | 3-STATE | 1.2 mm | 16 | 14 b | 128 Mb | 0.002 A | 134217728 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | |||||||||||||||||||
![]() | Mfr Part No IS43DR81280A-25DBLI-TR | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43DR81280A-25DBLI-TR | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.49 | Yes | 1.8 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS43DR81280A-25EBLI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43DR81280A-25EBLI | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 40 | 5.31 | Yes | Yes | 1.8 V | n/a | e1 | Yes | EAR99 | Staking kit | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7015S15PF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 80 | 15 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7015S15PF | RAM, SRAM | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-80 | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | 20 | 5.78 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | not_compliant | 80 | S-PQFP-G80 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | Parallel | 2 | ASYNCHRONOUS | 0.31 mA | 8KX9 | 3-STATE | 1.6 mm | 9 | 0.015 A | 73728 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | YES | 14 mm | 14 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7007S55JGI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 68 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68 | PGA68,11X11 | SQUARE | CHIP CARRIER | Obsolete | LCC | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 30 | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.31 mA | 32KX8 | 3-STATE | 4.572 mm | 8 | 0.03 A | 262144 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 24.2062 mm | 24.2062 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No EDJ1108BDSE-DJ-F | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.255 ns | 667 MHz | MICRON TECHNOLOGY INC | 134217728 words | 128000000 | PLASTIC/EPOXY | FBGA | FBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Yes | 1.5 V | EAR99 | 8542.32.00.32 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B78 | Not Qualified | 0.31 mA | 128MX8 | 3-STATE | 8 | 1073741824 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No EDJ1108BDSE-DJ-F | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.255 ns | 667 MHz | ELPIDA MEMORY INC | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.5 V | e1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.6 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V3389S6BFG | Integrated Device Technology (IDT) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT70V3389S6BFG | 3 | 65536 words | 64000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | LFBGA | LFBGA, BGA208,17X17,32 | BGA208,17X17,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | BGA | 30 | 5.21 | Yes | 3.3 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 208 | S-CBGA-B208 | Not Qualified | 3.45 V | 2.5/3.3,3.3 V | COMMERCIAL | 3.15 V | 2 | SYNCHRONOUS | 0.31 mA | 64KX18 | 3-STATE | 1.7 mm | 18 | 0.015 A | 1179648 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.15 V | 15 mm | 15 mm | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V3579S6BC | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 256 | 256 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT70V3579S6BC | RAM, SRAM | Glenair | 3 | 32768 words | 32000 | 70 °C | Retail Package | PLASTIC/EPOXY | LBGA | LBGA, BGA256,16X16,40 | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 20 | 5.15 | Compliant | No | 3.3 V | * | e0 | No | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70 °C | 0 °C | PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | not_compliant | 256 | S-PBGA-B256 | Not Qualified | 3.45 V | 2.5/3.3,3.3 V | COMMERCIAL | 3.15 V | Parallel | 2 | SYNCHRONOUS | 0.31 mA | 32KX36 | 3-STATE | 1.5 mm | 36 | 1179648 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.15 V | 17 mm | 17 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No EDE1116ACSE-6ELI-E | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.45 ns | 333 MHz | ELPIDA MEMORY INC | 67108864 words | 64000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 11 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 70V3389S6BFG | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 65536 words | 64000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | TFBGA | TFBGA, BGA208,17X17,32 | BGA208,17X17,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | Yes | 3.3 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 30 | 208 | S-CBGA-B208 | Not Qualified | 3.45 V | COMMERCIAL | 3.15 V | 2 | SYNCHRONOUS | 0.31 mA | 64KX18 | 3-STATE | 1.2 mm | 18 | 0.015 A | 1179648 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | 15 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HYB18T2G402C2F-25F | Qimonda AG | Datasheet | - | - | Min: 1 Mult: 1 | YES | 63 | 0.6 ns | 400 MHz | QIMONDA AG | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA63,9X11,32 | BGA63,9X11,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 63 | R-PBGA-B63 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 512MX4 | 3-STATE | 1.3 mm | 4 | 0.026 A | 2147483648 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8.5 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC8M16A2P-75L:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M16A2P-75L:G | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.54 | Compliant | Yes | 3.3 V | Bulk | e3 | EAR99 | Matte Tin (Sn) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 133 MHz | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 122.1 MB | 1 | 150 mA | SYNCHRONOUS | 0.31 mA | 133 µs | 16 b | 8MX16 | 3-STATE | 1.2 mm | 16 | 14 b | 128 Mb | 0.002 A | 134217728 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | Lead Free | ||||||||||||||||
![]() | Mfr Part No GS84036AGT-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS84036AGT-166 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.66 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 4 | SYNCHRONOUS | 0.31 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 17 b | 4 Mb | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | |||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC8M16A2F4-75IT:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M16A2F4-75IT:G | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 8 X 8 MM, VFBGA-54 | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.58 | No | 3.3 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 54 | S-PBGA-B54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 8MX16 | 3-STATE | 1 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M8A2TG-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M8A2TG-75:G | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.51 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M8A2TG-75IT:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M8A2TG-75IT:G | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.52 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS84018AGT-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS84018AGT-166 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.64 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.31 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm |
MT48LC8M16A2F4-75:G
Micron
Package:Memory
Price: please inquire
MT48LC16M8A2FB-75:G
Micron
Package:Memory
Price: please inquire
MT48LC8M16A2TG-75IT:G
Micron
Package:Memory
Price: please inquire
IS43DR81280A-25DBLI-TR
ISSI
Package:Memory
Price: please inquire
IS43DR81280A-25EBLI
ISSI
Package:Memory
Price: please inquire
IDT7015S15PF
Renesas
Package:Memory
Price: please inquire
IDT7007S55JGI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
EDJ1108BDSE-DJ-F
Micron Technology Inc
Package:Memory
Price: please inquire
EDJ1108BDSE-DJ-F
Elpida Memory Inc
Package:Memory
Price: please inquire
IDT70V3389S6BFG
Integrated Device Technology (IDT)
Package:Memory
Price: please inquire
IDT70V3579S6BC
Renesas
Package:Memory
Price: please inquire
EDE1116ACSE-6ELI-E
Elpida Memory Inc
Package:Memory
Price: please inquire
70V3389S6BFG
Integrated Device Technology Inc
Package:Memory
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HYB18T2G402C2F-25F
Qimonda AG
Package:Memory
Price: please inquire
MT48LC8M16A2P-75L:G
Micron
Package:Memory
Price: please inquire
GS84036AGT-166
GSI Technology
Package:Memory
Price: please inquire
MT48LC8M16A2F4-75IT:G
Micron
Package:Memory
Price: please inquire
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