The category is 'Memory'
Memory (30)
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- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Output Characteristics
- Supply Current-Max
- Supply Current-Max:
0.31 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Clock Rate | Maximum Operating Supply Voltage | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening |
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![]() | Mfr Part No MT48LC32M4A2P-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC32M4A2P-75:G | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.58 | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 32MX4 | 3-STATE | 1.2 mm | 4 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC32M4A2TG-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC32M4A2TG-75:G | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.56 | Non-Compliant | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 1 | 150 mA | SYNCHRONOUS | 0.31 mA | 4 b | 32MX4 | 3-STATE | 1.2 mm | 4 | 14 b | 128 Mb | 0.002 A | 134217728 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | |||||||||||||||||||
![]() | Mfr Part No MT41J2G4THE-125:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.225 ns | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J2G4THE-125:D | 2147483648 words | 2000000000 | 85 °C | PLASTIC/EPOXY | TFBGA | FBGA-78 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | 5.75 | Yes | 1.5 V | SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.31 mA | 2GX4 | 3-STATE | 1.2 mm | 4 | 0.04 A | 8589934592 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | DUAL BANK PAGE BURST | YES | 12 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832118AD-375I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 4.5 ns | 375 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS832118AD-375I | 238@Flow-Through/375@Pipelined MHz | 2.7, 3.6 V | 2.3, 3 V | Surface Mount | 18 Bit | 2 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.16 | No | FBGA | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | 3A991.B.2.B | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 2 | SYNCHRONOUS | 0.31 mA | Flow-Through/Pipelined | 1MX18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 36 Mbit | 0.04 A | 18874368 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm | ||||||||||||||||||||||||
![]() | Mfr Part No GS840H36AGT-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AGT-166 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.34 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 4 | SYNCHRONOUS | 0.31 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 17 b | 4.5 Mb | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | |||||||||||||||||||||||||||
![]() | Mfr Part No GS840H18AB-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AB-166 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 2 | SYNCHRONOUS | 0.31 mA | 256KX18 | 3-STATE | 2.19 mm | 18 | 18 b | 4.5 Mb | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | No | ||||||||||||||||||||||||||||
![]() | Mfr Part No GS840H32AGT-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H32AGT-166 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 4 | SYNCHRONOUS | 0.31 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 17 b | 4 Mb | 0.02 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | |||||||||||||||||||||||||||
![]() | Mfr Part No GS840H36AB-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 119 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AB-166 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.28 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.31 mA | 128KX36 | 3-STATE | 2.19 mm | 36 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS840H18AGT-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AGT-166 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.31 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS84036AB-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS84036AB-166 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.73 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.31 mA | 128KX36 | 3-STATE | 2.19 mm | 36 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm |
MT48LC32M4A2P-75:G
Micron
Package:Memory
Price: please inquire
MT48LC32M4A2TG-75:G
Micron
Package:Memory
Price: please inquire
MT41J2G4THE-125:D
Micron
Package:Memory
Price: please inquire
GS832118AD-375I
GSI Technology
Package:Memory
Price: please inquire
GS840H36AGT-166
GSI Technology
Package:Memory
Price: please inquire
GS840H18AB-166
GSI Technology
Package:Memory
Price: please inquire
GS840H32AGT-166
GSI Technology
Package:Memory
Price: please inquire
GS840H36AB-166
GSI Technology
Package:Memory
Price: please inquire
GS840H18AGT-166
GSI Technology
Package:Memory
Price: please inquire
GS84036AB-166
GSI Technology
Package:Memory
Price: please inquire
