The category is 'Memory'
Memory (27)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Mode
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.32 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No GS840H36AB-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 119 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AB-166I | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.28 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.32 mA | 128KX36 | 3-STATE | 2.19 mm | 36 | 0.03 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No GS840H18AGT-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 8.5 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AGT-166I | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.32 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.03 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No GVT71512B18TA-7 | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 117 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.32 mA | 512KX18 | 3-STATE | 1.6 mm | 18 | 0.01 A | 9437184 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4M563233D-EN80 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 6 ns | 125 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 3.6 V | OTHER | 2.7 V | 1 | SYNCHRONOUS | 0.32 mA | 8MX32 | 1.45 mm | 32 | 0.0012 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64VPS204818B-166TQLA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 2.5 V | 3A991.B.2.A | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 0.32 mA | 2MX18 | 3-STATE | 1.6 mm | 18 | 0.115 A | 37748736 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM69P536ATQ5 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5 ns | MOTOROLA INC | 32768 words | 32000 | 110 °C | 20 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | BURST COUNTER | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | R-PQFP-G100 | Not Qualified | 3.6 V | OTHER | 3.135 V | 1 | SYNCHRONOUS | 0.32 mA | 32KX36 | 3-STATE | 1.6 mm | 36 | 0.055 A | 1179648 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | YES | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM69P536ATQ5 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 32768 words | 32000 | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | No | 3.3 V | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | 3.3 V | SYNCHRONOUS | 0.32 mA | 32KX36 | 3-STATE | 36 | 0.055 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HY5DU663222Q-7M | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 1.1 ns | 143 MHz | SK HYNIX INC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 2.5 V | No | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | NOT SPECIFIED | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | COMMERCIAL | 2.375 V | 1 | SYNCHRONOUS | 0.32 mA | 2MX32 | 3-STATE | 1.6 mm | 32 | 0.01 A | 67108864 bit | COMMON | DDR1 DRAM | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No LY62L2568RL-45LL | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | LYONTEK INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Contact Manufacturer | 3 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.32 mA | 256KX8 | 1.25 mm | 8 | 2097152 bit | PARALLEL | STANDARD SRAM | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7005L20JB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 68 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC68,1.0SQ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | Transferred | LCC | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.32 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.004 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | 24.2062 mm | 24.2062 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT71V3576S166PF | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.5 ns | 166 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | ALSO REQUIRES 3.3V I/O SUPPLY | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.32 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62996FN20 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 20 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.32 mA | 16KX16 | 3-STATE | 16 | 0.05 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62996FN20 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 20 ns | MOTOROLA INC | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.32 mA | 16KX16 | 3-STATE | 4.57 mm | 16 | 0.05 A | 262144 bit | PARALLEL | COMMON | CACHE TAG SRAM | 4.5 V | YES | 19.1262 mm | 19.1262 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC4M32B2TG-6:G | Micron | Datasheet | 9 | - | Min: 1 Mult: 1 | YES | 86 | 5.5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M32B2TG-6:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-86 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.59 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.5 mm | unknown | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.32 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No W9412G2IB-5 | Winbond | Datasheet | 2160 | - | Min: 1 Mult: 1 | YES | 144 | 0.7 ns | 200 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9412G2IB-5 | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.72 | Yes | 2.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 144 | S-PBGA-B144 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.32 mA | 4MX32 | 3-STATE | 1.4 mm | 32 | 0.03 A | 134217728 bit | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 12 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H16M16FG-3:B | Micron | Datasheet | 78 | - | Min: 1 Mult: 1 | Surface Mount | YES | 84 | 84 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H16M16FG-3:B | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 14 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.83 | Non-Compliant | No | 1.8 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 1 | 215 mA | SYNCHRONOUS | 0.32 mA | 450 ps | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 256 Mb | 0.005 A | 268435456 bit | 667 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | No | |||||||||||
![]() | Mfr Part No MT41J256M16RE-125:D | Micron | Datasheet | 1499 | - | Min: 1 Mult: 1 | Surface Mount | YES | 96 | 96 | 0.225 ns | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J256M16RE-125:D | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.66 | Compliant | Yes | 1.5 V | Bulk | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 95 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | 1 | 280 mA | SYNCHRONOUS | 0.32 mA | 16 b | 256MX16 | 3-STATE | 1.2 mm | 16 | 18 b | 4 Gb | 0.02 A | 4294967296 bit | 1.6 GHz | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm | No | Lead Free | ||||||||||
![]() | Mfr Part No MT48LC4M32B2F5-7:G | Micron | Datasheet | 2400 | - | Min: 1 Mult: 1 | YES | 90 | 5.5 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M32B2F5-7:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA-90 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.48 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.32 mA | 4MX32 | 3-STATE | 1 mm | 32 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No MT47H16M16FG-3IT:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H16M16FG-3IT:B | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 14 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.89 | No | 1.8 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.32 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No CY7C09369V-6AC | Cypress Semiconductor | Datasheet | 1219 | - | Min: 1 Mult: 1 | YES | 100 | 100 | 6.5 ns | 100 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C09369V-6AC | 3 | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | LFQFP | PLASTIC, MS-026, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 30 | 5.78 | Compliant | No | 3.3 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | SYNCHRONOUS | 0.32 mA | 16KX18 | 3-STATE | 1.6 mm | 18 | 28 b | 288 kb | 0.00025 A | 294912 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 14 mm | 14 mm |
GS840H36AB-166I
GSI Technology
Package:Memory
Price: please inquire
GS840H18AGT-166I
GSI Technology
Package:Memory
Price: please inquire
GVT71512B18TA-7
Cypress Semiconductor
Package:Memory
Price: please inquire
K4M563233D-EN80
Samsung Semiconductor
Package:Memory
Price: please inquire
IS64VPS204818B-166TQLA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
MCM69P536ATQ5
Motorola Semiconductor Products
Package:Memory
Price: please inquire
MCM69P536ATQ5
Freescale Semiconductor
Package:Memory
Price: please inquire
HY5DU663222Q-7M
SK Hynix Inc
Package:Memory
Price: please inquire
LY62L2568RL-45LL
Lyontek Inc
Package:Memory
Price: please inquire
IDT7005L20JB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
IDT71V3576S166PF
Integrated Device Technology Inc
Package:Memory
Price: please inquire
MCM62996FN20
Freescale Semiconductor
Package:Memory
Price: please inquire
MCM62996FN20
Motorola Semiconductor Products
Package:Memory
Price: please inquire
MT48LC4M32B2TG-6:G
Micron
Package:Memory
Price: please inquire
W9412G2IB-5
Winbond
Package:Memory
Price: please inquire
MT47H16M16FG-3:B
Micron
Package:Memory
Price: please inquire
MT41J256M16RE-125:D
Micron
Package:Memory
Price: please inquire
MT48LC4M32B2F5-7:G
Micron
Package:Memory
Price: please inquire
MT47H16M16FG-3IT:B
Micron
Package:Memory
Price: please inquire
CY7C09369V-6AC
Cypress Semiconductor
Package:Memory
Price: please inquire
