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The category is 'Memory'

Memory (27)

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Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
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Organization
Package Code
Supply Current-Max

Supply Current-Max:
0.32 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Sync/Async	Word Size	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening
	Mfr Part No GS8321Z36E250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount	YES	165	165	6.5 ns	250 MHz	GSI TECHNOLOGY	GSI Technology	GS8321Z36E-250I	3	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	15 X 17 MM, 1 MM PITCH, FPBGA-165	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	NOT SPECIFIED	5.65	Compliant	No	2.5 V			No	3A991.B.2.B		85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	153 MHz	165	R-PBGA-B165	Not Qualified		2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	3.6 V	2.3 V	1	220 mA	SYNCHRONOUS	0.32 mA	6.5 ns	1MX36	3-STATE	1.5 mm	36	20 b	36 Mb	0.08 A	37748736 bit	PARALLEL	COMMON	Synchronous	36 b	ZBT SRAM	2.3 V						17 mm	15 mm	No
	Mfr Part No MT41K256M16RE-125:D	Micron	Datasheet	800 In Stock	-	Min: 1 Mult: 1				YES		96		800 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41K256M16RE-125:D		268435456 words	256000000	95 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete			5.64		Yes	1.35 V				EAR99				AUTO/SELF REFRESH	8542.32.00.36	DRAMs	CMOS	BOTTOM	BALL		1	0.8 mm	unknown			R-PBGA-B96	Not Qualified		1.45 V	1.35 V	OTHER	1.283 V			1		SYNCHRONOUS	0.32 mA		256MX16	3-STATE	1.2 mm	16			0.02 A	4294967296 bit		COMMON			DDR DRAM		8192	8	8	MULTI BANK PAGE BURST	YES	14 mm	10 mm
	Mfr Part No GS840H36AGT-166I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		YES		100	8.5 ns	166 MHz	GSI TECHNOLOGY	GSI Technology	GS840H36AGT-166I	3	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34	Compliant	Yes	3.3 V		e3	Yes	3A991.B.2.B	PURE MATTE TIN	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	3.3 V	3.6 V	2.5/3.3,3.3 V	INDUSTRIAL	3 V			4		SYNCHRONOUS	0.32 mA		128KX36	3-STATE	1.6 mm	36	17 b	4.5 Mb	0.03 A	4718592 bit	PARALLEL	COMMON			CACHE SRAM	3.14 V						20 mm	14 mm	No
	Mfr Part No GS840H32AB-166I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				YES		119	8.5 ns	166 MHz	GSI TECHNOLOGY	GSI Technology	GS840H32AB-166I	3	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.21		No	3.3 V		e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant		119	R-PBGA-B119	Not Qualified		3.6 V	2.5/3.3,3.3 V	INDUSTRIAL	3 V					SYNCHRONOUS	0.32 mA		128KX32	3-STATE	2.19 mm	32			0.03 A	4194304 bit	PARALLEL	COMMON			CACHE SRAM	3.14 V						22 mm	14 mm
	Mfr Part No GS84018AB-166IT	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		YES		119	8.5 ns	166 MHz	GSI TECHNOLOGY	GSI Technology	GS84018AB-166IT	3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Obsolete	BGA	NOT SPECIFIED	5.72		No	3.3 V		e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant		119	R-PBGA-B119	Not Qualified		3.6 V	2.5/3.3,3.3 V	INDUSTRIAL	3 V					SYNCHRONOUS	0.32 mA		256KX18	3-STATE	2.19 mm	18			0.03 A	4718592 bit	PARALLEL	COMMON			CACHE SRAM	3.14 V						22 mm	14 mm
	Mfr Part No GS840H18AB-166I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				YES		119	8.5 ns	166 MHz	GSI TECHNOLOGY	GSI Technology	GS840H18AB-166I	3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.21	Compliant	No	3.3 V		e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant		119	R-PBGA-B119	Not Qualified	3.3 V	3.6 V	2.5/3.3,3.3 V	INDUSTRIAL	3 V			2		SYNCHRONOUS	0.32 mA		256KX18	3-STATE	2.19 mm	18	18 b	4.5 Mb	0.03 A	4718592 bit	PARALLEL	COMMON			CACHE SRAM	3.14 V						22 mm	14 mm	No
	Mfr Part No GS84018AGT-166IT	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		YES		100	8.5 ns	166 MHz	GSI TECHNOLOGY	GSI Technology	GS84018AGT-166IT	3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.66	Compliant	Yes	3.3 V	Tape & Reel	e3	Yes	3A991.B.2.B	PURE MATTE TIN	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	3.3 V	3.6 V	2.5/3.3,3.3 V	INDUSTRIAL	3 V			2		SYNCHRONOUS	0.32 mA		256KX18	3-STATE	1.6 mm	18	18 b	4 Mb	0.03 A	4718592 bit	PARALLEL	COMMON			CACHE SRAM	3.14 V						20 mm	14 mm	No

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