The category is 'Memory'
Memory (11)
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- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Supply Current-Max
- Supply Current-Max:
0.325 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No CY7C027-12AC | Cypress Semiconductor Corp | Datasheet | 11 |
| Min: 1 Mult: 1 | 1 Week | YES | 100 | 12 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C027-12AC | Cypress Semiconductor Corp | 3 | 32768 words | 32000 | 70 °C | Bulk | PLASTIC/EPOXY | LFQFP | LFQFP, QFP100,.63SQ,20 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | Active | 30 | 5.84 | No | 5 V | * | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | INTERRUPT FLAG | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.325 mA | 32KX16 | 3-STATE | 1.6 mm | 16 | 0.0015 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | YES | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4H510438D-UCB3 | Samsung | Datasheet | 10 | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H510438D-UCB3 | 3 | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.82 | Yes | 2.5 V | e6 | Yes | Tin/Bismuth (Sn/Bi) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | unknown | R-PDSO-G66 | Not Qualified | 2.5 V | COMMERCIAL | 0.325 mA | 128MX4 | 3-STATE | 4 | 0.005 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V32M4TG-75ZL | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | MICRON TECHNOLOGY INC | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | 0.400 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | No | 2.5 V | e0 | No | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.65 mm | not_compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.325 mA | 32MX4 | 3-STATE | 1.2 mm | 4 | 0.003 A | 134217728 bit | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V32M4TG-75L | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | MICRON TECHNOLOGY INC | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | 0.400 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | No | 2.5 V | e0 | No | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.65 mm | not_compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.325 mA | 32MX4 | 3-STATE | 1.2 mm | 4 | 0.003 A | 134217728 bit | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NT5DS32M8BT-5T | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.65 ns | 200 MHz | NANYA TECHNOLOGY CORP | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 2.6 V | No | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | NOT SPECIFIED | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.325 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AS7C33128PFS32A-100TQC | Alliance Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 12 ns | 100 MHz | ALLIANCE SEMICONDUCTOR CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.325 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.03 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1347-100AC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5.5 ns | 100 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | PIPELINE ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | not_compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.325 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.0025 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1329-133AC | Cypress Semiconductor | Datasheet | 1588 | - | Min: 1 Mult: 1 | YES | 100 | 4.2 ns | 133 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1329-133AC | 3 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 30 | 8.69 | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD (800) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 225 | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.325 mA | 64KX32 | 3-STATE | 1.6 mm | 32 | 0.005 A | 2097152 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4H510438C-UCB0 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H510438C-UCB0 | 3 | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.84 | Yes | 2.5 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | unknown | R-PDSO-G66 | Not Qualified | 2.5 V | COMMERCIAL | 0.325 mA | 128MX4 | 3-STATE | 4 | 0.005 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z18AGB-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 119 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS8322Z18AGB-400I | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | 2.3, 3 V | 3 | Surface Mount | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Yes | FBGA | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | e1 | Yes | 3A991.B.2.B | TIN SILVER COPPER | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 2 | SYNCHRONOUS | 0.325 mA | Flow-Through/Pipelined | 2MX18 | 3-STATE | 1.99 mm | 18 | 21 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 22 mm | 14 mm | ||||||||||||||||||||||
![]() | Mfr Part No GS8321E36AGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | 333 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AGD-333I | 333 MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.31 | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | GS8321E36AGD | e1 | Yes | 3A991.B.2.B | TIN SILVER COPPER | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 0.325 mA | 4.5 ns | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm |
CY7C027-12AC
Cypress Semiconductor Corp
Package:Memory
4.665681
K4H510438D-UCB3
Samsung
Package:Memory
Price: please inquire
MT46V32M4TG-75ZL
Micron Technology Inc
Package:Memory
Price: please inquire
MT46V32M4TG-75L
Micron Technology Inc
Package:Memory
Price: please inquire
NT5DS32M8BT-5T
Nanya Technology Corporation
Package:Memory
Price: please inquire
AS7C33128PFS32A-100TQC
Alliance Semiconductor Corporation
Package:Memory
Price: please inquire
CY7C1347-100AC
Cypress Semiconductor
Package:Memory
Price: please inquire
CY7C1329-133AC
Cypress Semiconductor
Package:Memory
Price: please inquire
K4H510438C-UCB0
Samsung
Package:Memory
Price: please inquire
GS8322Z18AGB-400I
GSI Technology
Package:Memory
Price: please inquire
GS8321E36AGD-333I
GSI Technology
Package:Memory
Price: please inquire
