The category is 'Memory'
Memory (10)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Supply Current-Max
- Supply Current-Max:
0.33 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Length | Width | Lead Free |
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![]() | Mfr Part No MT48LC8M16A2TG-7E:G | Micron | Datasheet | 76 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M16A2TG-7E:G | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.49 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.33 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||
![]() | Mfr Part No MT48LC16M8A2BB-7E:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M8A2BB-7E:G | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,8X15,32 | BGA60,8X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.34 | Yes | 3.3 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.33 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 16 mm | 8 mm | |||||||||||||||
![]() | Mfr Part No K4H561638H-UCB3 | Samsung | Datasheet | 18 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H561638H-UCB3 | 3 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 40 | 5.79 | Compliant | Yes | 2.3 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | unknown | 166 MHz | R-PDSO-G66 | Not Qualified | 2.3 V | COMMERCIAL | 0.33 mA | 16MX16 | 3-STATE | 16 | 0.003 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | Lead Free | ||||||||||||||||||||||||||
![]() | Mfr Part No IDT7143SA45GB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 68 | 45 ns | INTEGRATED DEVICE TECHNOLOGY INC | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | CERAMIC, PGA-68 | PGA68,11X11 | SQUARE | GRID ARRAY | Obsolete | PGA | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | PERPENDICULAR | PIN/PEG | 1 | 2.54 mm | not_compliant | 68 | S-CPGA-P68 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.33 mA | 2KX16 | 3-STATE | 3.683 mm | 16 | 0.004 A | 32768 bit | MIL-PRF-38535 | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | YES | 29.464 mm | 29.464 mm | ||||||||||||||||||||||||
![]() | Mfr Part No MT48LC8M16A2P-6A: | Micron Technology | Datasheet | 283 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | AIRPAX | 167 MHz | 3 | MICRON TECHNOLOGY INC | Sensata | MT48LC8M16A2P-6A | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | 30 | 1.46 | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.02 | Circuit Breakers | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.33 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | Circuit Breakers | 22.22 mm | 10.16 mm | |||||||||||
![]() | Mfr Part No IS61LV25616-10KI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | INTEGRATED CIRCUIT SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ44,.44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J44 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.33 mA | 256KX16 | 3-STATE | 16 | 0.015 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H64M16HW-37EIT:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.5 ns | 267 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HW-37EIT:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.66 | No | 1.8 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.33 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||
![]() | Mfr Part No MT47H64M16HW-37E:E | Micron | Datasheet | 80 | - | Min: 1 Mult: 1 | YES | 84 | 0.5 ns | 267 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HW-37E:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.66 | No | 1.8 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.33 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||
![]() | Mfr Part No MT41J512M8RA-107:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.195 ns | 933 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J512M8RA-107:D | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.67 | Yes | 1.5 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.33 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | |||||||||||||||||||||||
![]() | Mfr Part No MT47H64M16BT-5EIT:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 92 | 0.6 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16BT-5EIT:A | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA92,9X21,32 | BGA92,9X21,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.6 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 92 | R-PBGA-B92 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.33 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 19 mm | 11 mm |
MT48LC8M16A2TG-7E:G
Micron
Package:Memory
Price: please inquire
MT48LC16M8A2BB-7E:G
Micron
Package:Memory
Price: please inquire
K4H561638H-UCB3
Samsung
Package:Memory
Price: please inquire
IDT7143SA45GB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
MT48LC8M16A2P-6A:
Micron Technology
Package:Memory
Price: please inquire
IS61LV25616-10KI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
MT47H64M16HW-37EIT:E
Micron
Package:Memory
Price: please inquire
MT47H64M16HW-37E:E
Micron
Package:Memory
Price: please inquire
MT41J512M8RA-107:D
Micron
Package:Memory
Price: please inquire
MT47H64M16BT-5EIT:A
Micron
Package:Memory
Price: please inquire
