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Memory (27)

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Supply Current-Max:
0.35 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Note	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Lead Free
Mfr Part No K4H561638H-UCCC	Samsung	Datasheet	136 In Stock	-	Min: 1 Mult: 1	YES		66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H561638H-UCCC	3	16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.8		Yes	2.5 V		e6	Yes			Tin/Bismuth (Sn97Bi3)			DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown				R-PDSO-G66	Not Qualified		2.5 V	COMMERCIAL					0.35 mA	16MX16	3-STATE		16	0.004 A	268435456 bit		COMMON	DDR DRAM			8192	2,4,8	2,4,8
Mfr Part No K4H561638F-UCB3	Samsung	Datasheet	512 In Stock	-	Min: 1 Mult: 1	YES	66	66		166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H561638F-UCB3	3	16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.3	Compliant	Yes	2.5 V		e6	Yes			Tin/Bismuth (Sn/Bi)			DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown	166 MHz			R-PDSO-G66	Not Qualified		2.5 V	COMMERCIAL					0.35 mA	16MX16	3-STATE		16		268435456 bit		COMMON	DDR DRAM			8192	2,4,8	2,4,8					Lead Free
Mfr Part No IS43DR16640A-3DBL-TR	ISSI	Datasheet	-	-	Min: 1 Mult: 1	YES		84	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS43DR16640A-3DBL-TR		67108864 words	64000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete			5.84		Yes	1.8 V							AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL		1	0.8 mm	compliant				R-PBGA-B84	Not Qualified	1.9 V	1.8 V	COMMERCIAL	1.7 V		1	SYNCHRONOUS	0.35 mA	64MX16	3-STATE	1.2 mm	16	0.015 A	1073741824 bit		COMMON	DDR DRAM			8192	4,8	4,8	MULTI BANK PAGE BURST	YES	13.65 mm	8 mm
Mfr Part No IS43DR16320B-25DBL-TR	ISSI	Datasheet	-	-	Min: 1 Mult: 1	YES		84	0.4 ns	400 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS43DR16320B-25DBL-TR	1	33554432 words	32000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete		NOT SPECIFIED	5.84	Yes	Yes	1.8 V	-	e3	Yes		Mounting Kit	Matte Tin (Sn)	AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL	225	1	0.8 mm	compliant				R-PBGA-B84	Not Qualified	1.9 V	1.8 V	COMMERCIAL	1.7 V	-	1	SYNCHRONOUS	0.35 mA	32MX16	3-STATE	1.2 mm	16	0.008 A	536870912 bit		COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	13 mm	10.5 mm
Mfr Part No IS43DR16640A-3DBLI-TR	ISSI	Datasheet	-	-	Min: 1 Mult: 1	YES		84	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS43DR16640A-3DBLI-TR		67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete		NOT SPECIFIED	5.84		Yes	1.8 V							AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant				R-PBGA-B84	Not Qualified	1.9 V	1.8 V	INDUSTRIAL	1.7 V		1	SYNCHRONOUS	0.35 mA	64MX16	3-STATE	1.2 mm	16	0.015 A	1073741824 bit		COMMON	DDR DRAM			8192	4,8	4,8	MULTI BANK PAGE BURST	YES	13.65 mm	8 mm
Mfr Part No IS43DR16640-3DBLI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		84	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC				67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA				Yes	1.8 V		e1	Yes	EAR99		Tin/Silver/Copper (Sn/Ag/Cu)	AUTO/SELF REFRESH	8542.32.00.32			BOTTOM	BALL		1	0.8 mm	compliant			84	R-PBGA-B84	Not Qualified	1.9 V		INDUSTRIAL	1.7 V		1	SYNCHRONOUS	0.35 mA	64MX16	3-STATE	1.2 mm	16	0.015 A	1073741824 bit		COMMON	DDR2 DRAM			8192	4,8	4,8	MULTI BANK PAGE BURST	YES	13.65 mm	8 mm
Mfr Part No IC43R16160-6TG	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		66	0.7 ns	166 MHz	INTEGRATED SILICON SOLUTION INC				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete					Yes	2.5 V		e3		EAR99		MATTE TIN	AUTO/SELF REFRESH	8542.32.00.24			DUAL	GULL WING	260	1	0.65 mm	compliant		10		R-PDSO-G66	Not Qualified	2.7 V		COMMERCIAL	2.3 V		1	SYNCHRONOUS	0.35 mA	16MX16	3-STATE	1.2 mm	16		268435456 bit		COMMON	DDR1 DRAM			8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
Mfr Part No MCM63P531TQ7	Motorola Semiconductor Products	Datasheet	-	-	Min: 1 Mult: 1	YES		100	7 ns		MOTOROLA INC				32768 words	32000			PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete					No	3.3 V		e0		3A991.B.2.B		TIN LEAD		8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown				R-PQFP-G100	Not Qualified	3.6 V			3.135 V		1	SYNCHRONOUS	0.35 mA	32KX32	3-STATE	1.6 mm	32	0.065 A	1048576 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	YES						20 mm	14 mm
Mfr Part No MCM62996FN12	Motorola Mobility LLC	Datasheet	-	-	Min: 1 Mult: 1	YES		52	12 ns		MOTOROLA INC				16384 words	16000	70 °C		PLASTIC/EPOXY	QCCJ	QCCJ, LDCC52,.8SQ	LDCC52,.8SQ	SQUARE	CHIP CARRIER	Obsolete	LCC				No	5 V		e0	No	EAR99		TIN LEAD		8542.32.00.41			QUAD	J BEND		1	1.27 mm	unknown			52	S-PQCC-J52	Not Qualified	5.5 V		COMMERCIAL	4.5 V		1	ASYNCHRONOUS	0.35 mA	16KX16	3-STATE	4.57 mm	16	0.05 A	262144 bit	PARALLEL	COMMON	CACHE TAG SRAM	4.5 V	YES						19.1262 mm	19.1262 mm
Mfr Part No UPD4382361GF-A85	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1	YES		100	8.5 ns	100 MHz	RENESAS ELECTRONICS CORP				262144 words	256000	70 °C		PLASTIC/EPOXY	QFP		QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete					No	3.3 V		e0		3A991.B.2.A		Tin/Lead (Sn/Pb)		8542.32.00.41			QUAD	GULL WING			0.635 mm	unknown				R-PQFP-G100	Not Qualified			COMMERCIAL				SYNCHRONOUS	0.35 mA	256KX36	3-STATE		36	0.01 A	9437184 bit	PARALLEL	COMMON	STANDARD SRAM	3.14 V
Mfr Part No IS43DR16320B-25EBL-TR	ISSI	Datasheet	-	-	Min: 1 Mult: 1	YES		84	0.4 ns	400 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS43DR16320B-25EBL-TR	1	33554432 words	32000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete		NOT SPECIFIED	5.84	Non-Compliant	Yes	1.8 V		e3	Yes			Matte Tin (Sn)	AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL	225	1	0.8 mm	compliant				R-PBGA-B84	Not Qualified	1.9 V	1.8 V	COMMERCIAL	1.7 V		1	SYNCHRONOUS	0.35 mA	32MX16	3-STATE	1.2 mm	16	0.008 A	536870912 bit		COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	13 mm	10.5 mm
Mfr Part No MCM62996FN12	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES		52	12 ns		MOTOROLA SEMICONDUCTOR PRODUCTS				16384 words	16000	70 °C		PLASTIC/EPOXY	QCCJ	QCCJ, LDCC52,.8SQ	LDCC52,.8SQ	SQUARE	CHIP CARRIER	Obsolete					No	5 V		e0				Tin/Lead (Sn/Pb)					QUAD	J BEND			1.27 mm	unknown				S-PQCC-J52	Not Qualified		5 V	COMMERCIAL				ASYNCHRONOUS	0.35 mA	16KX16	3-STATE		16	0.05 A	262144 bit	PARALLEL	COMMON	STANDARD SRAM	4.5 V
Mfr Part No MCM63P531TQ7	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES		100	7 ns		MOTOROLA SEMICONDUCTOR PRODUCTS				32768 words	32000			PLASTIC/EPOXY	QFP	QFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete					No	3.3 V		e0				Tin/Lead (Sn/Pb)					QUAD	GULL WING			0.635 mm	unknown				R-PQFP-G100	Not Qualified		3.3 V					SYNCHRONOUS	0.35 mA	32KX32	3-STATE		32	0.065 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3.14 V
Mfr Part No MCM63P737ZP166	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES		119	3.5 ns	166 MHz	MOTOROLA SEMICONDUCTOR PRODUCTS				131072 words	128000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Obsolete					No			e0				Tin/Lead (Sn/Pb)					BOTTOM	BALL			1.27 mm	unknown				R-PBGA-B119	Not Qualified		2.5/3.3,3.3 V	COMMERCIAL				SYNCHRONOUS	0.35 mA	128KX36	3-STATE		36	0.005 A	4718592 bit	PARALLEL	COMMON	STANDARD SRAM	3.14 V
Mfr Part No IS61LV25616-8T	Integrated Circuit Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		44	8 ns		INTEGRATED CIRCUIT SOLUTION INC				262144 words	256000	70 °C		PLASTIC/EPOXY	TSOP	TSOP, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred					No	3.3 V		e0		3A991.B.2.A		Tin/Lead (Sn/Pb)		8542.32.00.41			DUAL	GULL WING			0.8 mm	unknown				R-PDSO-G44	Not Qualified			COMMERCIAL				ASYNCHRONOUS	0.35 mA	256KX16	3-STATE		16	0.01 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	3 V
Mfr Part No 71V3556S166PF	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		100	3.5 ns	166 MHz	INTEGRATED DEVICE TECHNOLOGY INC			3	131072 words	128000	70 °C		PLASTIC/EPOXY	QFP		QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete					No	3.3 V		e0		3A991.B.2.A		TIN LEAD		8542.32.00.41			QUAD	GULL WING	225		0.635 mm	not_compliant		20		R-PQFP-G100	Not Qualified			COMMERCIAL				SYNCHRONOUS	0.35 mA	128KX36	3-STATE		36	0.04 A	4718592 bit	PARALLEL	COMMON	ZBT SRAM	3.14 V
Mfr Part No M5M5V5636GP-13I	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1	YES		100	4.2 ns	133 MHz	RENESAS ELECTRONICS CORP			1	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	14 X 20 MM, PLASTIC, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No	3.3 V			No	3A991.B.2.A			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown			100	R-PQFP-G100	Not Qualified	3.465 V		INDUSTRIAL	3.135 V			SYNCHRONOUS	0.35 mA	512KX36	3-STATE	1.6 mm	36	0.03 A	18874368 bit	PARALLEL	COMMON	STANDARD SRAM	3.14 V							20 mm	14 mm
Mfr Part No IS42R32160D-6BL	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		90	5.4 ns	166 MHz	INTEGRATED SILICON SOLUTION INC				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA				Yes	2.5 V				EAR99			AUTO/SELF REFRESH	8542.32.00.28			BOTTOM	BALL		1	0.8 mm	compliant			90	R-PBGA-B90	Not Qualified	2.7 V		COMMERCIAL	2.3 V		1	SYNCHRONOUS	0.35 mA	16MX32	3-STATE	1.2 mm	32	0.004 A	536870912 bit		COMMON	SYNCHRONOUS DRAM			8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No IS42R32160D-6BLI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	YES		90	5.4 ns	166 MHz	INTEGRATED SILICON SOLUTION INC				16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA				Yes	2.5 V				EAR99			AUTO/SELF REFRESH	8542.32.00.28			BOTTOM	BALL		1	0.8 mm	compliant			90	R-PBGA-B90	Not Qualified	2.7 V		INDUSTRIAL	2.3 V		1	SYNCHRONOUS	0.35 mA	16MX32	3-STATE	1.2 mm	32	0.004 A	536870912 bit		COMMON	SYNCHRONOUS DRAM			8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No MT47H64M16HR-3IT:E	Micron	Datasheet	352 In Stock	-	Min: 1 Mult: 1	YES		84	0.45 ns	333 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H64M16HR-3IT:E		67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	7.88		Yes	1.8 V		e1		EAR99		Tin/Silver/Copper (Sn/Ag/Cu)	AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown			84	R-PBGA-B84	Not Qualified	1.9 V	1.8 V	INDUSTRIAL	1.7 V		1	SYNCHRONOUS	0.35 mA	64MX16	3-STATE	1.2 mm	16	0.007 A	1073741824 bit		COMMON	DDR DRAM			8192	4,8	4,8	MULTI BANK PAGE BURST	YES	12.5 mm	8 mm

Memory (27)