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The category is 'Memory'

Memory (27)

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I/O Type
Ihs Manufacturer
JESD-30 Code
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Supply Current-Max

Supply Current-Max:
0.35 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mount	Package / Case	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MT47H32M16HR-3L:F	Micron	Datasheet	2400 In Stock	-	Min: 1 Mult: 1			Surface Mount		YES	84	84	0.45 ns	333 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H32M16HR-3L:F											33554432 words	32000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.61	Compliant	Yes				1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown	84	R-PBGA-B84	Not Qualified	1.8 V	1.9 V	1.8 V	OTHER	1.7 V	1.9 V	1.7 V		1	250 mA	SYNCHRONOUS	0.35 mA	450 ps			32MX16	3-STATE	1.2 mm	16	15 b	512 Mb	0.007 A	536870912 bit	667 MHz			COMMON	DDR DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	12.5 mm	8 mm		Lead Free
	Mfr Part No IS43DR16320B-25DBL	ISSI	Datasheet	13692 In Stock	-	Min: 1 Mult: 1		14 Weeks	Surface Mount		YES	84	84	0.4 ns	400 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS43DR16320B-25DBL											33554432 words	32000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	DSBGA	40	5.6	Compliant	Yes				1.8 V							e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	84	R-PBGA-B84	Not Qualified	1.8 V	1.9 V	1.8 V	COMMERCIAL	1.7 V	1.9 V	1.7 V	64 MB	1	300 mA	SYNCHRONOUS	0.35 mA	400 ps		16 b	32MX16	3-STATE	1.2 mm	16	15 b	512 Mb	0.008 A	512	800 MHz			COMMON	DDR DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	13 mm	10.5 mm	No
	Mfr Part No MT47H32M16HR-3IT:F	Micron	Datasheet	1458 In Stock	-	Min: 1 Mult: 1					YES		84	0.45 ns	333 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H32M16HR-3IT:F											33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.6		Yes				1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown	84	R-PBGA-B84	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS	0.35 mA				32MX16	3-STATE	1.2 mm	16			0.007 A	536870912 bit				COMMON	DDR DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	12.5 mm	8 mm
	Mfr Part No MT47H32M16HR-3E:F	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES		84	0.45 ns	333 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H32M16HR-3E:F							3				33554432 words	32000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	7.84		Yes				1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	not_compliant	84	R-PBGA-B84	Not Qualified		1.9 V	1.8 V	OTHER	1.7 V				1		SYNCHRONOUS	0.35 mA				32MX16	3-STATE	1.2 mm	16			0.007 A	536870912 bit				COMMON	DDR DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	12.5 mm	8 mm
	Mfr Part No MT47H64M16HR-3EIT:E	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES		84	0.45 ns	333 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H64M16HR-3EIT:E											67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	8 X 12.50 MM, ROHS COMPLIANT, FBGA-84	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	30	5.45	Compliant	Yes				1.8 V							e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	84	R-PBGA-B84	Not Qualified	1.8 V	1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS	0.35 mA	450 ps		16 b	64MX16	3-STATE	1.2 mm	16	16 b	1 Gb	0.007 A	1	667 MHz			COMMON	DDR DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES	12.5 mm	8 mm	No	Lead Free
	Mfr Part No MT47H64M16HR-3L:E	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES		84	0.45 ns	333 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H64M16HR-3L:E											67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.18		Yes				1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown	84	R-PBGA-B84	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS	0.35 mA				64MX16	3-STATE	1.2 mm	16			0.007 A	1073741824 bit				COMMON	DDR DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES	12.5 mm	8 mm
	Mfr Part No GS832132AD-375I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-165	YES		165	4.5 ns	375 MHz	SDR	GSI TECHNOLOGY	Parallel	GSI Technology	GS832132AD-375I	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	2.3, 3 V	- 40 C		Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		5.16	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Bulk	GS832132AD			3A991.B.2.B		100 °C	-40 °C	PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V			36 Mbit	4		SYNCHRONOUS	0.35 mA	4.2 ns	Flow-Through/Pipelined		1MX32	3-STATE	1.4 mm	32	20 Bit	36 Mbit	0.04 A	33554432 bit		Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V						15 mm	13 mm	No

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