The category is 'Memory'

  • All Manufacturers
  • Access Time-Max
  • Additional Feature
  • Clock Frequency-Max (fCLK)
  • ECCN Code
  • HTS Code
  • I/O Type
  • Ihs Manufacturer
  • JESD-30 Code
  • Length
  • Memory Density
  • Memory Width
  • Supply Current-Max
  • Supply Current-Max:

    0.355 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Surface Mount

Number of Terminals

Access Time-Max

Clock Frequency-Max (fCLK)

Data Rate Architecture

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Maximum Clock Rate

Maximum Operating Supply Voltage

Minimum Operating Supply Voltage

Mounting

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

Rohs Code

Supplier Package

Supply Voltage-Nom (Vsup)

Timing Type

Typical Operating Supply Voltage

Usage Level

Operating Temperature

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Number of Ports

Operating Mode

Supply Current-Max

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Access Mode

Self Refresh

Length

Width

H5TQ1G63AFP-G8C

Mfr Part No

H5TQ1G63AFP-G8C

SK Hynix Inc Datasheet

-

-

Min: 1

Mult: 1

YES

96

0.15 ns

533 MHz

SK HYNIX INC

67108864 words

64000000

85 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA96,9X16,32

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

BGA

Yes

1.5 V

EAR99

AUTO/SELF REFRESH

8542.32.00.32

BOTTOM

BALL

1

0.8 mm

unknown

96

R-PBGA-B96

Not Qualified

1.575 V

OTHER

1.425 V

1

SYNCHRONOUS

0.355 mA

64MX16

3-STATE

1.1 mm

16

0.01 A

1073741824 bit

COMMON

DDR3 DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

13 mm

8 mm

GS864218B-250M

Mfr Part No

GS864218B-250M

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

YES

119

6.5 ns

250 MHz

SDR

GSI TECHNOLOGY

GSI Technology

GS864218B-250M

153@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

2.3, 3 V

Surface Mount

18 Bit

4 MWords

4000000

125 °C

-55 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.43

No

FBGA

2.5 V

Synchronous

2.5, 3.3 V

Military grade

-55 to 125 °C

e0

No

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

MILITARY

2.3 V

2

SYNCHRONOUS

0.355 mA

Flow-Through/Pipelined

4MX18

3-STATE

1.99 mm

18

22 Bit

72 Mbit

0.14 A

75497472 bit

Military

PARALLEL

COMMON

CACHE SRAM

2.3 V

22 mm

14 mm