The category is 'Memory'
Memory (20)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Supply Current-Max
- Supply Current-Max:
0.36 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width | Thickness | Radiation Hardening | Lead Free |
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![]() | Mfr Part No CY7C1347D-200AC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1347D-200AC | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 30 | 5.5 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD (800) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 225 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | 3.3 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.36 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.01 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832236E-225M | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 7 ns | 225 MHz | GSI TECHNOLOGY | GSI Technology | GS832236E-225M | 1048576 words | 1000000 | 125 °C | -55 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.66 | No | 2.5 V | 3A991.B.2.B | FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | MILITARY | 2.3 V | SYNCHRONOUS | 0.36 mA | 1MX36 | 3-STATE | 1.5 mm | 36 | 0.2 A | 36 | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 709359L9BF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 100 | 100 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BF100 | 709359L9BF | 3 | 8000 | 8000 | 70 °C | PLASTIC/EPOXY | LFBGA | FPBGA-100 | BGA100,10X10,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | CABGA | NOT SPECIFIED | 5.91 | Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | not_compliant | 40 MHz | 100 | S-PBGA-B100 | Not Qualified | Integrated Device Technology | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | 2 | 360 mA | SYNCHRONOUS | 0.36 mA | 20 ns | 8KX18 | 3-STATE | 1.5 mm | 18 | 26 b | 144 kb | 0.003 A | 147456 bit | PARALLEL | COMMON | Synchronous | 18 b | DUAL-PORT SRAM | 4.5 V | 10 mm | 10 mm | 1.4 mm | No | Contains Lead | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS46DR16640A-25EBLA1 | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 8-SMD, Flat Lead | YES | SNT-8A | 84 | 0.4 ns | S-24C08 | 400 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS46DR16640A-25EBLA1 | Non-Volatile | ABLIC Inc. | 67108864 words | 64000000 | 85 °C | -40 °C | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | Active | 40 | 5.5 | Yes | 1.8 V | Automotive grade | -40°C ~ 85°C (TA) | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | EEPROM | 1.7V ~ 5.5V | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 8Kbit | 1 | SYNCHRONOUS | 1 MHz | 0.36 mA | 500 ns | EEPROM | I²C | 64MX16 | 3-STATE | 1.2 mm | 16 | 5ms | 0.015 A | 1073741824 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 1K x 8 | 13.65 mm | 8 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No 709349L9BF | Integrated Device Technology (IDT) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BF100 | 709349L9BF | 3 | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | LFBGA | FPBGA-100 | BGA100,10X10,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | CABGA | NOT SPECIFIED | 5.91 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | not_compliant | 100 | S-PBGA-B100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 2 | SYNCHRONOUS | 0.36 mA | 4KX18 | 3-STATE | 1.5 mm | 18 | 0.003 A | 73728 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 10 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS43DR16640A-25EBL-TR | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43DR16640A-25EBL-TR | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.42 | Yes | 1.8 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.36 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS43DR16640A-25EBLI-TR | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43DR16640A-25EBLI-TR | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.42 | Yes | 1.8 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.36 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K7N163631B-PI25 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 2.6 ns | 250 MHz | SAMSUNG SEMICONDUCTOR INC | 1 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | Yes | e3 | Yes | 3A991.B.2.A | MATTE TIN | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | INDUSTRIAL | SYNCHRONOUS | 0.36 mA | 512KX36 | 3-STATE | 36 | 0.13 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67W618FN12 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 12 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.36 mA | 64KX18 | 3-STATE | 18 | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V3389S6PRFI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 128 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | PLASTIC, TQFP-128 | QFP128,.63X.87,20 | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.5 mm | not_compliant | 30 | 128 | R-PQFP-G128 | Not Qualified | 3.45 V | INDUSTRIAL | 3.15 V | 2 | SYNCHRONOUS | 0.36 mA | 64KX18 | 3-STATE | 1.6 mm | 18 | 0.03 A | 1179648 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62990AFN20 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 20 ns | MOTOROLA INC | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; BYTE WRITE; INPUT DATA LATCH | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | SYNCHRONOUS | 0.36 mA | 16KX16 | 3-STATE | 4.57 mm | 16 | 0.07 A | 262144 bit | PARALLEL | COMMON | CACHE TAG SRAM | 4.5 V | YES | 19.1262 mm | 19.1262 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62990AFN20 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 20 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | SYNCHRONOUS | 0.36 mA | 16KX16 | 3-STATE | 16 | 0.07 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62995FN25 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 25 ns | MOTOROLA INC | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.36 mA | 16KX16 | 3-STATE | 4.57 mm | 16 | 0.08 A | 262144 bit | PARALLEL | COMMON | CACHE TAG SRAM | 4.5 V | YES | 19.1262 mm | 19.1262 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM62995FN25 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 25 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.36 mA | 16KX16 | 3-STATE | 16 | 0.08 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7009L20PFI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7009L20PFI | RAM, SRAM | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 20 | 5.25 | Compliant | No | 5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85 °C | -40 °C | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | 2 | ASYNCHRONOUS | 0.36 mA | 128KX8 | 3-STATE | 1.6 mm | 8 | 0.006 A | 1048576 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT71V35761S200BG8 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3.1 ns | 200 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT71V35761S200BG8 | RAM, SRAM | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA-119 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.77 | Non-Compliant | No | 3.3 V | Tape & Reel (TR) | e0 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | not_compliant | 200 MHz | 119 | R-PBGA-B119 | Not Qualified | 3.465 V | 3.3 V | COMMERCIAL | 3.135 V | Parallel | SYNCHRONOUS | 0.36 mA | 128KX36 | 3-STATE | 2.36 mm | 36 | 0.03 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67W618FN12 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 12 ns | MOTOROLA INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | 3A991.B.2.A | TIN LEAD | ADDRESS LATCH | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | 52 | S-PQCC-J52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.36 mA | 64KX18 | 3-STATE | 4.57 mm | 18 | 1179648 bit | PARALLEL | COMMON | CACHE TAG SRAM | YES | 19.1262 mm | 19.1262 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V3569S6DRI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | FQFP | PLASTIC, QFP-208 | QFP208,1.2SQ,20 | SQUARE | FLATPACK, FINE PITCH | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 8542.32.00.41 | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | not_compliant | NOT SPECIFIED | 208 | S-PQFP-G208 | Not Qualified | 3.45 V | INDUSTRIAL | 3.15 V | 2 | SYNCHRONOUS | 0.36 mA | 16KX36 | 3-STATE | 4.1 mm | 36 | 0.03 A | 589824 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | 28 mm | 28 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C09569V-83BBC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 172 | 18 ns | 83 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C09569V-83BBC | 3 | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | LBGA | 15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, BGA-172 | BGA172,14X14,40 | SQUARE | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.81 | No | 3.3 V | e0 | 3A991.B.2.B | TIN LEAD | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 220 | 1 | 1 mm | not_compliant | 172 | S-PBGA-B172 | Not Qualified | 3.465 V | 3.3 V | COMMERCIAL | 3.135 V | 2 | SYNCHRONOUS | 0.36 mA | 16KX36 | 3-STATE | 1.25 mm | 36 | 0.001 A | 589824 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.14 V | 15 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4H511638B-UCB0 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H511638B-UCB0 | 3 | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.84 | Yes | 2.5 V | Yes | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | compliant | R-PDSO-G66 | Not Qualified | 2.5 V | COMMERCIAL | 0.36 mA | 32MX16 | 3-STATE | 16 | 0.005 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 |
CY7C1347D-200AC
Cypress Semiconductor
Package:Memory
Price: please inquire
GS832236E-225M
GSI Technology
Package:Memory
Price: please inquire
709359L9BF
Renesas
Package:Memory
Price: please inquire
IS46DR16640A-25EBLA1
ISSI
Package:Memory
Price: please inquire
709349L9BF
Integrated Device Technology (IDT)
Package:Memory
Price: please inquire
IS43DR16640A-25EBL-TR
ISSI
Package:Memory
Price: please inquire
IS43DR16640A-25EBLI-TR
ISSI
Package:Memory
Price: please inquire
K7N163631B-PI25
Samsung Semiconductor
Package:Memory
Price: please inquire
MCM67W618FN12
Freescale Semiconductor
Package:Memory
Price: please inquire
IDT70V3389S6PRFI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
MCM62990AFN20
Motorola Semiconductor Products
Package:Memory
Price: please inquire
MCM62990AFN20
Freescale Semiconductor
Package:Memory
Price: please inquire
MCM62995FN25
Motorola Semiconductor Products
Package:Memory
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MCM62995FN25
Freescale Semiconductor
Package:Memory
Price: please inquire
IDT7009L20PFI
Renesas
Package:Memory
Price: please inquire
IDT71V35761S200BG8
Renesas
Package:Memory
Price: please inquire
MCM67W618FN12
Motorola Mobility LLC
Package:Memory
Price: please inquire
IDT70V3569S6DRI
Integrated Device Technology Inc
Package:Memory
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CY7C09569V-83BBC
Cypress Semiconductor
Package:Memory
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K4H511638B-UCB0
Samsung
Package:Memory
Price: please inquire
