The category is 'Memory'

  • All Manufacturers
  • Access Time-Max
  • I/O Type
  • Ihs Manufacturer
  • JESD-30 Code
  • Memory Density
  • Memory IC Type
  • Memory Width
  • Number of Terminals
  • Number of Words
  • Number of Words Code
  • Organization
  • Supply Current-Max
  • Supply Current-Max:

    0.36 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Mount

Mounting Type

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Number of Terminals

Access Time-Max

Base Product Number

Clock Frequency-Max (fCLK)

Ihs Manufacturer

Manufacturer

Manufacturer Package Code

Manufacturer Part Number

Memory Types

Mfr

Moisture Sensitivity Levels

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Product Status

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supply Voltage-Nom (Vsup)

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Brand Name

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Interface

Max Supply Voltage

Min Supply Voltage

Memory Size

Number of Ports

Nominal Supply Current

Operating Mode

Clock Frequency

Supply Current-Max

Access Time

Memory Format

Memory Interface

Organization

Output Characteristics

Seated Height-Max

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Sync/Async

Word Size

Memory IC Type

Standby Voltage-Min

Output Enable

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Access Mode

Self Refresh

Memory Organization

Length

Width

Thickness

Radiation Hardening

Lead Free

CY7C1347D-200AC

Mfr Part No

CY7C1347D-200AC

Cypress Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

100

3 ns

CYPRESS SEMICONDUCTOR CORP

Cypress Semiconductor

CY7C1347D-200AC

3

131072 words

128000

70 °C

PLASTIC/EPOXY

LQFP

14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

30

5.5

No

3.3 V

e0

No

3A991.B.2.A

TIN LEAD (800)

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

225

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

3.63 V

3.3 V

COMMERCIAL

3.135 V

SYNCHRONOUS

0.36 mA

128KX36

3-STATE

1.6 mm

36

0.01 A

4718592 bit

PARALLEL

COMMON

CACHE SRAM

3.14 V

20 mm

14 mm

GS832236E-225M

Mfr Part No

GS832236E-225M

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

YES

165

7 ns

225 MHz

GSI TECHNOLOGY

GSI Technology

GS832236E-225M

1048576 words

1000000

125 °C

-55 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Obsolete

BGA

5.66

No

2.5 V

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

unknown

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

MILITARY

2.3 V

SYNCHRONOUS

0.36 mA

1MX36

3-STATE

1.5 mm

36

0.2 A

36

PARALLEL

COMMON

CACHE SRAM

2.3 V

17 mm

15 mm

709359L9BF

Mfr Part No

709359L9BF

Renesas Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

YES

100

100

20 ns

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

BF100

709359L9BF

3

8000

8000

70 °C

PLASTIC/EPOXY

LFBGA

FPBGA-100

BGA100,10X10,32

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

Obsolete

CABGA

NOT SPECIFIED

5.91

Compliant

No

5 V

e0

No

EAR99

Tin/Lead (Sn63Pb37)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

225

1

0.8 mm

not_compliant

40 MHz

100

S-PBGA-B100

Not Qualified

Integrated Device Technology

5 V

5.5 V

5 V

COMMERCIAL

4.5 V

5.5 V

4.5 V

2

360 mA

SYNCHRONOUS

0.36 mA

20 ns

8KX18

3-STATE

1.5 mm

18

26 b

144 kb

0.003 A

147456 bit

PARALLEL

COMMON

Synchronous

18 b

DUAL-PORT SRAM

4.5 V

10 mm

10 mm

1.4 mm

No

Contains Lead

IS46DR16640A-25EBLA1

Mfr Part No

IS46DR16640A-25EBLA1

ISSI Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

8-SMD, Flat Lead

YES

SNT-8A

84

0.4 ns

S-24C08

400 MHz

INTEGRATED SILICON SOLUTION INC

Integrated Silicon Solution Inc

IS46DR16640A-25EBLA1

Non-Volatile

ABLIC Inc.

67108864 words

64000000

85 °C

-40 °C

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

DSBGA

Active

40

5.5

Yes

1.8 V

Automotive grade

-40°C ~ 85°C (TA)

-

e1

Yes

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH

8542.32.00.32

DRAMs

EEPROM

1.7V ~ 5.5V

BOTTOM

BALL

260

1

0.8 mm

compliant

84

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

INDUSTRIAL

1.7 V

8Kbit

1

SYNCHRONOUS

1 MHz

0.36 mA

500 ns

EEPROM

I²C

64MX16

3-STATE

1.2 mm

16

5ms

0.015 A

1073741824 bit

AEC-Q100

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

1K x 8

13.65 mm

8 mm

709349L9BF

Mfr Part No

709349L9BF

Integrated Device Technology (IDT) Datasheet

-

-

Min: 1

Mult: 1

YES

100

20 ns

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

BF100

709349L9BF

3

4096 words

4000

70 °C

PLASTIC/EPOXY

LFBGA

FPBGA-100

BGA100,10X10,32

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

Obsolete

CABGA

NOT SPECIFIED

5.91

No

5 V

e0

No

EAR99

Tin/Lead (Sn63Pb37)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

225

1

0.8 mm

not_compliant

100

S-PBGA-B100

Not Qualified

Integrated Device Technology

5.5 V

5 V

COMMERCIAL

4.5 V

2

SYNCHRONOUS

0.36 mA

4KX18

3-STATE

1.5 mm

18

0.003 A

73728 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

10 mm

10 mm

IS43DR16640A-25EBL-TR

Mfr Part No

IS43DR16640A-25EBL-TR

ISSI Datasheet

-

-

Min: 1

Mult: 1

YES

84

0.4 ns

400 MHz

INTEGRATED SILICON SOLUTION INC

Integrated Silicon Solution Inc

IS43DR16640A-25EBL-TR

67108864 words

64000000

70 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

5.42

Yes

1.8 V

AUTO/SELF REFRESH

DRAMs

CMOS

BOTTOM

BALL

1

0.8 mm

compliant

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

COMMERCIAL

1.7 V

1

SYNCHRONOUS

0.36 mA

64MX16

3-STATE

1.2 mm

16

0.015 A

1073741824 bit

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

13.65 mm

8 mm

IS43DR16640A-25EBLI-TR

Mfr Part No

IS43DR16640A-25EBLI-TR

ISSI Datasheet

-

-

Min: 1

Mult: 1

YES

84

0.4 ns

400 MHz

INTEGRATED SILICON SOLUTION INC

Integrated Silicon Solution Inc

IS43DR16640A-25EBLI-TR

67108864 words

64000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

5.42

Yes

1.8 V

AUTO/SELF REFRESH

DRAMs

CMOS

BOTTOM

BALL

1

0.8 mm

compliant

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

INDUSTRIAL

1.7 V

1

SYNCHRONOUS

0.36 mA

64MX16

3-STATE

1.2 mm

16

0.015 A

1073741824 bit

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

13.65 mm

8 mm

K7N163631B-PI25

Mfr Part No

K7N163631B-PI25

Samsung Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

100

2.6 ns

250 MHz

SAMSUNG SEMICONDUCTOR INC

1

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

QFP

QFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK

Obsolete

Yes

e3

Yes

3A991.B.2.A

MATTE TIN

8542.32.00.41

QUAD

GULL WING

0.635 mm

unknown

R-PQFP-G100

Not Qualified

INDUSTRIAL

SYNCHRONOUS

0.36 mA

512KX36

3-STATE

36

0.13 A

18874368 bit

PARALLEL

COMMON

ZBT SRAM

3.14 V

MCM67W618FN12

Mfr Part No

MCM67W618FN12

Freescale Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

52

12 ns

MOTOROLA SEMICONDUCTOR PRODUCTS

65536 words

64000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC52,.8SQ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

No

5 V

e0

Tin/Lead (Sn/Pb)

QUAD

J BEND

1.27 mm

unknown

S-PQCC-J52

Not Qualified

5 V

COMMERCIAL

ASYNCHRONOUS

0.36 mA

64KX18

3-STATE

18

1179648 bit

PARALLEL

COMMON

STANDARD SRAM

IDT70V3389S6PRFI

Mfr Part No

IDT70V3389S6PRFI

Integrated Device Technology Inc Datasheet

-

-

Min: 1

Mult: 1

YES

128

6 ns

83 MHz

INTEGRATED DEVICE TECHNOLOGY INC

3

65536 words

64000

85 °C

-40 °C

PLASTIC/EPOXY

LFQFP

PLASTIC, TQFP-128

QFP128,.63X.87,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

Obsolete

QFP

No

3.3 V

e0

No

3A991.B.2.A

Tin/Lead (Sn85Pb15)

PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE

8542.32.00.41

QUAD

GULL WING

225

1

0.5 mm

not_compliant

30

128

R-PQFP-G128

Not Qualified

3.45 V

INDUSTRIAL

3.15 V

2

SYNCHRONOUS

0.36 mA

64KX18

3-STATE

1.6 mm

18

0.03 A

1179648 bit

PARALLEL

COMMON

MULTI-PORT SRAM

3.15 V

20 mm

14 mm

MCM62990AFN20

Mfr Part No

MCM62990AFN20

Motorola Semiconductor Products Datasheet

-

-

Min: 1

Mult: 1

YES

52

20 ns

MOTOROLA INC

16384 words

16000

70 °C

PLASTIC/EPOXY

QCCJ

PLASTIC, LCC-52

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

No

5 V

e0

EAR99

TIN LEAD

OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; BYTE WRITE; INPUT DATA LATCH

8542.32.00.41

QUAD

J BEND

1

1.27 mm

unknown

S-PQCC-J52

Not Qualified

5.5 V

COMMERCIAL

4.5 V

1

SYNCHRONOUS

0.36 mA

16KX16

3-STATE

4.57 mm

16

0.07 A

262144 bit

PARALLEL

COMMON

CACHE TAG SRAM

4.5 V

YES

19.1262 mm

19.1262 mm

MCM62990AFN20

Mfr Part No

MCM62990AFN20

Freescale Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

52

20 ns

MOTOROLA SEMICONDUCTOR PRODUCTS

16384 words

16000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC52,.8SQ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

No

5 V

e0

Tin/Lead (Sn/Pb)

QUAD

J BEND

1.27 mm

unknown

S-PQCC-J52

Not Qualified

5 V

COMMERCIAL

SYNCHRONOUS

0.36 mA

16KX16

3-STATE

16

0.07 A

262144 bit

PARALLEL

COMMON

STANDARD SRAM

4.5 V

MCM62995FN25

Mfr Part No

MCM62995FN25

Motorola Semiconductor Products Datasheet

-

-

Min: 1

Mult: 1

YES

52

25 ns

MOTOROLA INC

16384 words

16000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC52,.8SQ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

No

5 V

e0

EAR99

TIN LEAD

8542.32.00.41

QUAD

J BEND

1

1.27 mm

unknown

S-PQCC-J52

Not Qualified

5.5 V

COMMERCIAL

4.5 V

1

ASYNCHRONOUS

0.36 mA

16KX16

3-STATE

4.57 mm

16

0.08 A

262144 bit

PARALLEL

COMMON

CACHE TAG SRAM

4.5 V

YES

19.1262 mm

19.1262 mm

MCM62995FN25

Mfr Part No

MCM62995FN25

Freescale Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

52

25 ns

MOTOROLA SEMICONDUCTOR PRODUCTS

16384 words

16000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC52,.8SQ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

No

5 V

e0

Tin/Lead (Sn/Pb)

QUAD

J BEND

1.27 mm

unknown

S-PQCC-J52

Not Qualified

5 V

COMMERCIAL

ASYNCHRONOUS

0.36 mA

16KX16

3-STATE

16

0.08 A

262144 bit

PARALLEL

COMMON

STANDARD SRAM

4.5 V

IDT71V35761S200BG8

Mfr Part No

IDT71V35761S200BG8

Renesas Datasheet

-

-

Min: 1

Mult: 1

YES

119

3.1 ns

200 MHz

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

IDT71V35761S200BG8

RAM, SRAM

3

131072 words

128000

70 °C

PLASTIC/EPOXY

BGA

BGA-119

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Obsolete

BGA

NOT SPECIFIED

5.77

Non-Compliant

No

3.3 V

Tape & Reel (TR)

e0

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70 °C

0 °C

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

not_compliant

200 MHz

119

R-PBGA-B119

Not Qualified

3.465 V

3.3 V

COMMERCIAL

3.135 V

Parallel

SYNCHRONOUS

0.36 mA

128KX36

3-STATE

2.36 mm

36

0.03 A

4718592 bit

PARALLEL

COMMON

CACHE SRAM

3.14 V

22 mm

14 mm

IDT7009L20PFI

Mfr Part No

IDT7009L20PFI

Renesas Datasheet

-

-

Min: 1

Mult: 1

YES

100

20 ns

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

IDT7009L20PFI

RAM, SRAM

3

131072 words

128000

85 °C

-40 °C

PLASTIC/EPOXY

LFQFP

14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

Obsolete

QFP

20

5.25

Compliant

No

5 V

e0

No

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85 °C

-40 °C

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

240

1

0.5 mm

not_compliant

100

S-PQFP-G100

Not Qualified

5.5 V

5 V

INDUSTRIAL

4.5 V

Parallel

2

ASYNCHRONOUS

0.36 mA

128KX8

3-STATE

1.6 mm

8

0.006 A

1048576 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

14 mm

14 mm

IDT70V3569S6DRI

Mfr Part No

IDT70V3569S6DRI

Integrated Device Technology Inc Datasheet

-

-

Min: 1

Mult: 1

YES

208

6 ns

83 MHz

INTEGRATED DEVICE TECHNOLOGY INC

3

16384 words

16000

85 °C

-40 °C

PLASTIC/EPOXY

FQFP

PLASTIC, QFP-208

QFP208,1.2SQ,20

SQUARE

FLATPACK, FINE PITCH

Obsolete

QFP

No

3.3 V

e0

No

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE

8542.32.00.41

QUAD

GULL WING

NOT SPECIFIED

1

0.5 mm

not_compliant

NOT SPECIFIED

208

S-PQFP-G208

Not Qualified

3.45 V

INDUSTRIAL

3.15 V

2

SYNCHRONOUS

0.36 mA

16KX36

3-STATE

4.1 mm

36

0.03 A

589824 bit

PARALLEL

COMMON

MULTI-PORT SRAM

3.15 V

28 mm

28 mm

MCM67W618FN12

Mfr Part No

MCM67W618FN12

Motorola Mobility LLC Datasheet

-

-

Min: 1

Mult: 1

YES

52

12 ns

MOTOROLA INC

65536 words

64000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC52,.8SQ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

Obsolete

LCC

No

5 V

e0

No

3A991.B.2.A

TIN LEAD

ADDRESS LATCH

8542.32.00.41

QUAD

J BEND

1

1.27 mm

unknown

52

S-PQCC-J52

Not Qualified

5.5 V

COMMERCIAL

4.5 V

1

ASYNCHRONOUS

0.36 mA

64KX18

3-STATE

4.57 mm

18

1179648 bit

PARALLEL

COMMON

CACHE TAG SRAM

YES

19.1262 mm

19.1262 mm

CY7C09569V-83BBC

Mfr Part No

CY7C09569V-83BBC

Cypress Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

172

18 ns

83 MHz

CYPRESS SEMICONDUCTOR CORP

Cypress Semiconductor

CY7C09569V-83BBC

3

16384 words

16000

70 °C

PLASTIC/EPOXY

LBGA

15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, BGA-172

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

Obsolete

BGA

NOT SPECIFIED

5.81

No

3.3 V

e0

3A991.B.2.B

TIN LEAD

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

220

1

1 mm

not_compliant

172

S-PBGA-B172

Not Qualified

3.465 V

3.3 V

COMMERCIAL

3.135 V

2

SYNCHRONOUS

0.36 mA

16KX36

3-STATE

1.25 mm

36

0.001 A

589824 bit

PARALLEL

COMMON

DUAL-PORT SRAM

3.14 V

15 mm

15 mm

K4H511638B-UCB0

Mfr Part No

K4H511638B-UCB0

Samsung Datasheet

-

-

Min: 1

Mult: 1

YES

66

0.75 ns

133 MHz

SAMSUNG SEMICONDUCTOR INC

Samsung Semiconductor

K4H511638B-UCB0

3

33554432 words

32000000

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP, TSSOP66,.46

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

NOT SPECIFIED

5.84

Yes

2.5 V

Yes

DRAMs

CMOS

DUAL

GULL WING

260

0.635 mm

compliant

R-PDSO-G66

Not Qualified

2.5 V

COMMERCIAL

0.36 mA

32MX16

3-STATE

16

0.005 A

536870912 bit

COMMON

DDR DRAM

8192

2,4,8

2,4,8