The category is 'Memory'
Memory (15)
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- Supply Current-Max:
0.37 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Material | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Head Height | Radiation Hardening | Lead Free |
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![]() | Mfr Part No GS832236AD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AD-400I | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | GS832236AD | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 0.37 mA | 4 ns | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No MT47H32M16HR-25:F | Micron | Datasheet | 4800 | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M16HR-25:F | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.42 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.37 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H32M16BN-25E:D | Micron | Datasheet | 1140 | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M16BN-25E:D | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | 30 | 5.6 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.37 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 7054S20G | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | NO | Brass | 108 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | GU108 | 7054S20G | 1 | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | PGA | PGA-108 | PGA108,12X12 | SQUARE | GRID ARRAY | Obsolete | PGA | NOT SPECIFIED | 5.81 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 8542.32.00.41 | SRAMs | CMOS | PERPENDICULAR | PIN/PEG | 240 | 1 | 2.54 mm | not_compliant | 108 | S-PPGA-P108 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 4 | ASYNCHRONOUS | 0.37 mA | 4KX8 | 3-STATE | 5.207 mm | 8 | 0.015 A | 32768 bit | PARALLEL | COMMON | FOUR-PORT SRAM | 4.5 V | 30.48 mm | 30.48 mm | 4.8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W632GG6KB15K | Winbond | Datasheet | 22000 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W632GG6KB15K | 134217728 words | 128000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.72 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.37 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.065 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70T3399S133BCG | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 256 | 4.2 ns | 133 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 131072 words | 128000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | LBGA | LBGA, BGA256,16X16,40 | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | Transferred | BGA | Yes | 2.5 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 30 | 256 | S-CBGA-B256 | Not Qualified | 2.6 V | COMMERCIAL | 2.4 V | 2 | SYNCHRONOUS | 0.37 mA | 128KX18 | 3-STATE | 1.7 mm | 18 | 0.015 A | 2359296 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2.4 V | 17 mm | 17 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TC55VD1618FF-133 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.2 ns | 133 MHz | TOSHIBA CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.37 mA | 1MX18 | 3-STATE | 1.7 mm | 18 | 0.01 A | 18874368 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7006S20PFI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.37 mA | 16KX8 | 3-STATE | 1.6 mm | 8 | 0.03 A | 131072 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MU9C8480BF-50TBC | Music Semiconductors Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 50 ns | MUSIC SEMICONDUCTORS INC | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.6SQ,32 | QFP64,.6SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Contact Manufacturer | QFP | Yes | 3.3 V | EAR99 | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.8 mm | unknown | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.37 mA | 8KX64 | 1.45 mm | 64 | 0.002 A | 524288 bit | PARALLEL | CONTENT ADDRESSABLE SRAM | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT7005S20PFB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.37 mA | 8KX8 | 3-STATE | 1.6 mm | 8 | 0.03 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70T3519S133BCG | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 256 | 15 ns | 133 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA256,16X16,40 | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | Transferred | BGA | Yes | 2.5 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 30 | 256 | S-PBGA-B256 | Not Qualified | 2.6 V | COMMERCIAL | 2.4 V | 2 | SYNCHRONOUS | 0.37 mA | 256KX36 | 3-STATE | 1.7 mm | 36 | 0.015 A | 9437184 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2.4 V | 17 mm | 17 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H32M16HW-25E:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M16HW-25E:F | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.63 | No | 1.8 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.37 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H32M16HR-25EIT:F | Micron | Datasheet | 2394 | - | Min: 1 Mult: 1 | Surface Mount | YES | 84 | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M16HR-25EIT:F | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.63 | Compliant | Yes | 1.8 V | Bulk | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 1 | 295 mA | SYNCHRONOUS | 0.37 mA | 400 ps | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 512 Mb | 0.007 A | 536870912 bit | 800 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H32M16BN-25:D | Micron | Datasheet | 1540 | - | Min: 1 Mult: 1 | Surface Mount | YES | 84 | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M16BN-25:D | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | 30 | 5.61 | Compliant | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | OTHER | 1.7 V | 1.9 V | 1.7 V | 1 | 295 mA | SYNCHRONOUS | 0.37 mA | 400 ps | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 512 Mb | 0.007 A | 536870912 bit | 800 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 10 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321E36AD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AD-400I | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.31 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | GS8321E36AD | e0 | No | 3A991.B.2.B | TIN LEAD | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 0.37 mA | 4 ns | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm |
GS832236AD-400I
GSI Technology
Package:Memory
Price: please inquire
MT47H32M16HR-25:F
Micron
Package:Memory
Price: please inquire
MT47H32M16BN-25E:D
Micron
Package:Memory
Price: please inquire
7054S20G
Renesas
Package:Memory
Price: please inquire
W632GG6KB15K
Winbond
Package:Memory
Price: please inquire
IDT70T3399S133BCG
Integrated Device Technology Inc
Package:Memory
Price: please inquire
TC55VD1618FF-133
Toshiba America Electronic Components
Package:Memory
Price: please inquire
IDT7006S20PFI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
MU9C8480BF-50TBC
Music Semiconductors Inc
Package:Memory
Price: please inquire
IDT7005S20PFB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
IDT70T3519S133BCG
Integrated Device Technology Inc
Package:Memory
Price: please inquire
MT47H32M16HW-25E:F
Micron
Package:Memory
Price: please inquire
MT47H32M16HR-25EIT:F
Micron
Package:Memory
Price: please inquire
MT47H32M16BN-25:D
Micron
Package:Memory
Price: please inquire
GS8321E36AD-400I
GSI Technology
Package:Memory
Price: please inquire
