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The category is 'Memory'

Memory (10)

All Manufacturers
I/O Type
Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Operating Temperature-Max
Output Characteristics
Supply Current-Max

Supply Current-Max:
0.38 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Clock Rate	Maximum Operating Supply Voltage	Mfr	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Mounting	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Series	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Brand Name	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Lead Free
	Mfr Part No K4H511638D-UCB3	Samsung	Datasheet	240 In Stock	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz		SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor		K4H511638D-UCB3					2			33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.82		Yes		2.5 V						e6	Yes		Tin/Bismuth (Sn97Bi3)			DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown				R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL				0.38 mA		32MX16	3-STATE		16			0.005 A	536870912 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8
	Mfr Part No IDT7M134S70C	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1			NO		58	70 ns			INTEGRATED DEVICE TECHNOLOGY INC											8192 words	8000	70 °C			CERAMIC	DIP		DIP58,.6	RECTANGULAR	IN-LINE	Obsolete						No		5 V						e0	No	EAR99	TIN LEAD		8542.32.00.41			DUAL	THROUGH-HOLE			2.54 mm	not_compliant				R-XDIP-T58	Not Qualified				COMMERCIAL		2	ASYNCHRONOUS	0.38 mA		8KX8	3-STATE		8			0.08 A	65536 bit		PARALLEL	COMMON	MULTI-PORT SRAM MODULE	4.5 V
	Mfr Part No K4H511638F-LCB3T	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz		SAMSUNG SEMICONDUCTOR INC								3			33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete						Yes		2.5 V								EAR99			8542.32.00.28			DUAL	GULL WING	260		0.635 mm	unknown				R-PDSO-G66	Not Qualified				COMMERCIAL				0.38 mA		32MX16	3-STATE		16			0.005 A	536870912 bit			COMMON	DDR1 DRAM		8192	2,4,8	2,4,8
	Mfr Part No W632GU6KB12K	Winbond Electronics Corp	Datasheet	93 In Stock	-	Min: 1 Mult: 1			YES		96	0.225 ns	800 MHz		WINBOND ELECTRONICS CORP											134217728 words	128000000	105 °C	-40 °C		PLASTIC/EPOXY	TFBGA	9 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA					Yes		1.35 V								EAR99		AUTO/SELF REFRESH	8542.32.00.36			BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant		NOT SPECIFIED	96	R-PBGA-B96	Not Qualified		1.45 V		INDUSTRIAL	1.283 V	1	SYNCHRONOUS	0.38 mA		128MX16	3-STATE	1.2 mm	16			0.019 A	2147483648 bit			COMMON	DDR3L DRAM		8192	8	8	MULTI BANK PAGE BURST	YES	13 mm	9 mm
	Mfr Part No K4H511638F-LCB30	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz		SAMSUNG SEMICONDUCTOR INC								3			33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2					Yes		2.5 V								EAR99		AUTO/SELF REFRESH	8542.32.00.28			DUAL	GULL WING	260	1	0.65 mm	unknown			66	R-PDSO-G66	Not Qualified		2.7 V		COMMERCIAL	2.3 V	1	SYNCHRONOUS	0.38 mA		32MX16	3-STATE	1.2 mm	16			0.005 A	536870912 bit			COMMON	DDR1 DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No NT5TU64M16DG-AD	Nanya Technology Corporation	Datasheet	-	-	Min: 1 Mult: 1			YES		84	0.4 ns	400 MHz		NANYA TECHNOLOGY CORP											67108864 words	64000000	85 °C			PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA					Yes		1.8 V								EAR99		AUTO/SELF REFRESH	8542.32.00.32			BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant		NOT SPECIFIED	84	R-PBGA-B84	Not Qualified		1.9 V		OTHER	1.7 V	1	SYNCHRONOUS	0.38 mA		64MX16	3-STATE	1.2 mm	16			0.008 A	1073741824 bit			COMMON	DDR2 DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES	12.5 mm	8 mm
	Mfr Part No K4H561638F-UCCC	Samsung	Datasheet	1734 In Stock	-	Min: 1 Mult: 1			YES		66		200 MHz		SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor		K4H561638F-UCCC					3			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.81		Yes		2.6 V							Yes					DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	compliant				R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL				0.38 mA		16MX16	3-STATE		16				268435456 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8
	Mfr Part No MT41J64M16LA-187E:B	Micron	Datasheet	508 In Stock	-	Min: 1 Mult: 1			YES		96	0.15 ns	533 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc		MT41J64M16LA-187E:B								67108864 words	64000000	85 °C			PLASTIC/EPOXY	TFBGA	TFBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.65		Yes		1.5 V						e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown			96	R-PBGA-B96	Not Qualified		1.575 V	1.5 V	OTHER	1.425 V	1	SYNCHRONOUS	0.38 mA		64MX16	3-STATE	1.2 mm	16			0.01 A	1073741824 bit			COMMON	DDR DRAM		8192	8	8	MULTI BANK PAGE BURST	YES	15.5 mm	9 mm
	Mfr Part No M5M5V5636GP-16I#B0	Renesas	Datasheet	294 In Stock	1: $28.772598 10: $27.143960 100: $25.607509 500: $24.158027 View all price	Min: 1 Mult: 1		1 Week	YES		100	3.8 ns	167 MHz	SDR	RENESAS ELECTRONICS CORP	Renesas Electronics Corporation	PLQP0100JA-A100	M5M5V5636GP-16I#B0	133/167 MHz	3.465 V	Renesas Electronics America Inc	3.135 V	1	Surface Mount	36 Bit	512 kWords	512000	85 °C	-40 °C	Bulk	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	LQFP	Active	NOT SPECIFIED	5.81		Yes	TQFP	3.3 V	Synchronous	3.3000 V	Industrial grade	-40 to 85 °C	*	e3	Yes		MATTE TIN			SRAMs	CMOS	QUAD	GULL WING	225	1	0.65 mm	compliant			100	R-PQFP-G100	Not Qualified	Renesas	3.465 V	2.5/3.3,3.3 V	INDUSTRIAL	3.135 V	1	SYNCHRONOUS	0.38 mA	Pipelined	512KX36	3-STATE	1.6 mm	36	19 Bit	18 Mbit	0.03 A	18874368 bit	Industrial	PARALLEL	COMMON	APPLICATION SPECIFIC SRAM	3.14 V						20 mm	14 mm
	Mfr Part No K4H511638C-UCB3	Samsung	Datasheet	4 In Stock	-	Min: 1 Mult: 1			YES	66	66	0.7 ns	166 MHz		SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor		K4H511638C-UCB3					3			33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.8	Compliant	Yes		2.5 V						e6	Yes		Tin/Bismuth (Sn97Bi3)			DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown	166 MHz			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL				0.38 mA		32MX16	3-STATE		16			0.005 A	536870912 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8					Lead Free