The category is 'Memory'

  • All Manufacturers
  • Access Time-Max
  • Clock Frequency-Max (fCLK)
  • I/O Type
  • Ihs Manufacturer
  • Interleaved Burst Length
  • JESD-30 Code
  • JESD-609 Code
  • Memory Density
  • Memory IC Type
  • Memory Width
  • Number of Terminals
  • Supply Current-Max
  • Supply Current-Max:

    0.385 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Mount

Surface Mount

Number of Pins

Number of Terminals

Access Time-Max

Clock Frequency-Max (fCLK)

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Moisture Sensitivity Levels

Number of Words

Number of Words Code

Operating Temperature-Max

Package Body Material

Package Code

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supply Voltage-Nom (Vsup)

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Terminal Pitch

Reach Compliance Code

Frequency

JESD-30 Code

Qualification Status

Power Supplies

Temperature Grade

Supply Current-Max

Access Time

Organization

Output Characteristics

Memory Width

Address Bus Width

Density

Standby Current-Max

Memory Density

Max Frequency

I/O Type

Memory IC Type

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Lead Free

K4H510838D-UCCC

Mfr Part No

K4H510838D-UCCC

Samsung Datasheet

408
In Stock

-

Min: 1

Mult: 1

Surface Mount

YES

66

66

0.65 ns

200 MHz

SAMSUNG SEMICONDUCTOR INC

Samsung Semiconductor

K4H510838D-UCCC

3

67108864 words

64000000

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

NOT SPECIFIED

5.8

Compliant

Yes

2.5 V

e6

Yes

Tin/Bismuth (Sn97Bi3)

70 °C

0 °C

DRAMs

CMOS

DUAL

GULL WING

260

0.635 mm

unknown

200 MHz

R-PDSO-G66

Not Qualified

2.5 V

COMMERCIAL

0.385 mA

650 ps

64MX8

3-STATE

8

15 b

512 Mb

0.005 A

536870912 bit

400 MHz

COMMON

DDR DRAM

8192

2,4,8

2,4,8

Lead Free

K4H510438F-HCCC

Mfr Part No

K4H510438F-HCCC

Samsung Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

60

0.65 ns

200 MHz

SAMSUNG SEMICONDUCTOR INC

3

134217728 words

128000000

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

Obsolete

Yes

2.6 V

e1

Yes

EAR99

TIN SILVER COPPER

8542.32.00.28

BOTTOM

BALL

260

0.8 mm

unknown

R-PBGA-B60

Not Qualified

COMMERCIAL

0.385 mA

128MX4

3-STATE

4

0.005 A

536870912 bit

COMMON

DDR1 DRAM

8192

2,4,8

2,4,8