The category is 'Memory'
Memory (2)
- All Manufacturers
- Access Time-Max
- Clock Frequency-Max (fCLK)
- I/O Type
- Ihs Manufacturer
- Interleaved Burst Length
- JESD-30 Code
- JESD-609 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Supply Current-Max
- Supply Current-Max:
0.385 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Reach Compliance Code | Frequency | JESD-30 Code | Qualification Status | Power Supplies | Temperature Grade | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Lead Free |
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![]() | Mfr Part No K4H510838D-UCCC | Samsung | Datasheet | 408 | - | Min: 1 Mult: 1 | Surface Mount | YES | 66 | 66 | 0.65 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H510838D-UCCC | 3 | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.8 | Compliant | Yes | 2.5 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | 70 °C | 0 °C | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | unknown | 200 MHz | R-PDSO-G66 | Not Qualified | 2.5 V | COMMERCIAL | 0.385 mA | 650 ps | 64MX8 | 3-STATE | 8 | 15 b | 512 Mb | 0.005 A | 536870912 bit | 400 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | Lead Free | |||
![]() | Mfr Part No K4H510438F-HCCC | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.65 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY | Obsolete | Yes | 2.6 V | e1 | Yes | EAR99 | TIN SILVER COPPER | 8542.32.00.28 | BOTTOM | BALL | 260 | 0.8 mm | unknown | R-PBGA-B60 | Not Qualified | COMMERCIAL | 0.385 mA | 128MX4 | 3-STATE | 4 | 0.005 A | 536870912 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 |

