The category is 'Memory'
Memory (5)
- All Manufacturers
- Additional Feature
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Length
- Memory Density
- Memory Width
- Supply Current-Max
- Supply Current-Max:
0.39 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No H5TQ5163MFR-16C | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 600 MHz | SK HYNIX INC | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.5 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 512MX1 | 3-STATE | 1.2 mm | 1 | 0.03 A | 536870912 bit | COMMON | DDR3 DRAM | 4096 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||
| Mfr Part No MT41J128M8JP-187E:F | Micron | Datasheet | 568 | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-187E:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.59 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1 | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | |||||||||
| Mfr Part No MT41J128M8HX-187E:D | Micron | Datasheet | 512 | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8HX-187E:D | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.43 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 9 mm | |||||||||
| Mfr Part No MT41J128M8JP-187EIT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-187EIT:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.49 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | |||||||||
| Mfr Part No 709089S9PF | Integrated Device Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 9 ns | 66 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PN100 | 709089S9PF | 3 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFF | 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK | Obsolete | TQFP | 20 | 5.28 | No | 5 V | e0 | No | 3A991 | Tin/Lead (Sn85Pb15) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | FLAT | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-F100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 2 | SYNCHRONOUS | 0.39 mA | 64KX8 | 3-STATE | 1.6 mm | 8 | 0.015 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 14 mm | 14 mm |
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H5TQ5163MFR-16C
SK Hynix Inc
Package:Memory
Price: please inquire
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MT41J128M8JP-187E:F
Micron
Package:Memory
Price: please inquire
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MT41J128M8HX-187E:D
Micron
Package:Memory
Price: please inquire
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MT41J128M8JP-187EIT:F
Micron
Package:Memory
Price: please inquire
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709089S9PF
Integrated Device Technology
Package:Memory
Price: please inquire