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The category is 'Memory'

Memory (10)

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Access Time-Max
Additional Feature
ECCN Code
HTS Code
I/O Type
Ihs Manufacturer
JESD-30 Code
Length
Memory Density
Memory IC Type
Number of Functions
Supply Current-Max

Supply Current-Max:
0.425 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Clock Rate	Maximum Operating Supply Voltage	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Operating Temperature	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Length	Width	Radiation Hardening
	Mfr Part No IS61NVF102418-7.5B3	ISSI	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	YES	165	7.5 ns	117 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS61NVF102418-7.5B3						1048576 words	1000000	70 °C		PLASTIC/EPOXY	TBGA	TBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, THIN PROFILE	Active	BGA	NOT SPECIFIED	5.48		No		2.5 V				e0	No	3A991.B.2.A	Tin/Lead (Sn/Pb)			FLOW-THROUGH ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V		SYNCHRONOUS	0.425 mA		1MX18	3-STATE	1.2 mm	18			0.06 A	18	PARALLEL	COMMON	ZBT SRAM	2.38 V	15 mm	13 mm
	Mfr Part No MCM69P737ZP3.5	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES	119	3.5 ns		FREESCALE SEMICONDUCTOR INC								131072 words	128000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Transferred	BGA				No		3.3 V						3A991				PIPELINED ARCHITECTURE	8542.31.00.01			BOTTOM	BALL		1	1.27 mm	unknown	119	R-PBGA-B119	Not Qualified		3.6 V		COMMERCIAL	3.135 V		SYNCHRONOUS	0.425 mA		128KX36	3-STATE	2.4 mm	36			0.045 A	4718592 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	22 mm	14 mm
	Mfr Part No IS61NLP102418-200B2LI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES	119	3.1 ns	200 MHz	INTEGRATED SILICON SOLUTION INC								1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA				Yes		3.3 V						3A991.B.2.A				PIPELINED ARCHITECTURE	8542.32.00.41			BOTTOM	BALL		1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified		3.465 V		INDUSTRIAL	3.135 V		SYNCHRONOUS	0.425 mA		1MX18	3-STATE	3.5 mm	18			0.075 A	18874368 bit	PARALLEL	COMMON	ZBT SRAM	3.14 V	22 mm	14 mm
	Mfr Part No TC55V16366FF-150	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1			YES	100	3.8 ns	150 MHz	TOSHIBA CORP								524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No		3.3 V				e0		3A991.B.2.A	Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified		3.465 V		COMMERCIAL	3.135 V		SYNCHRONOUS	0.425 mA		512KX36	3-STATE	1.7 mm	36			0.01 A	18874368 bit	PARALLEL	COMMON	CACHE SRAM		20 mm	14 mm
	Mfr Part No TC55V16356FF-150	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1			YES	100	3.8 ns	150 MHz	TOSHIBA CORP								524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No		3.3 V				e0	No	3A991.B.2.A	TIN LEAD			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified		3.465 V		COMMERCIAL	3.135 V		SYNCHRONOUS	0.425 mA		512KX36	3-STATE	1.7 mm	36			0.01 A	18874368 bit	PARALLEL	COMMON	CACHE SRAM		20 mm	14 mm
	Mfr Part No MCM69P737TQ3.5	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES	100	3.5 ns		FREESCALE SEMICONDUCTOR INC								131072 words	128000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Transferred	QFP				No		3.3 V						EAR99				PIPELINED ARCHITECTURE	8542.31.00.01			QUAD	GULL WING		1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified		3.6 V		COMMERCIAL	3.135 V		SYNCHRONOUS	0.425 mA		128KX36	3-STATE	1.6 mm	36			0.045 A	4718592 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	20 mm	14 mm
	Mfr Part No IS61NLF51236-7.5B3	ISSI	Datasheet	307 In Stock	-	Min: 1 Mult: 1		10 Weeks	YES	165	7.5 ns	117 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS61NLF51236-7.5B3						524288 words	512000	70 °C		PLASTIC/EPOXY	TBGA	TBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, THIN PROFILE	Active	BGA	NOT SPECIFIED	5.3		No		3.3 V				e0	No	3A991.B.2.A	Tin/Lead (Sn/Pb)			FLOW-THROUGH ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		3.465 V	2.5/3.3,3.3 V	COMMERCIAL	3.135 V		SYNCHRONOUS	0.425 mA		512KX36	3-STATE	1.2 mm	36			0.06 A	18	PARALLEL	COMMON	ZBT SRAM	3.14 V	15 mm	13 mm
	Mfr Part No IS61VPS102418A-200TQ	ISSI	Datasheet	289 In Stock	-	Min: 1 Mult: 1		12 Weeks	YES	100	3.1 ns	200 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS61VPS102418A-200TQ						1048576 words	1000000	70 °C		PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.8		No		2.5 V				e0	No	3A991.B.2.A	Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V		SYNCHRONOUS	0.425 mA		1MX18	3-STATE	1.6 mm	18			0.11 A	18874368 bit	PARALLEL	COMMON	CACHE SRAM	2.38 V	20 mm	14 mm
	Mfr Part No GS8662T18BGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	YES	165	0.45 ns	250 MHz	GSI TECHNOLOGY	GSI Technology	GS8662T18BGD-250	250 MHz	1.9 V	1.7 V	3	18 Bit	4194304 words	4000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.34	Compliant	Yes	FBGA	1.8 V	Synchronous	1.8000 V	0 to 85 °C	e1	Yes	3A991.B.2.B	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.8 V	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	1	SYNCHRONOUS	0.425 mA	0.45	4MX18	3-STATE	1.4 mm	18	22 b	72 Mb		72	PARALLEL	COMMON	DDR SRAM	1.7 V	15 mm	13 mm	No
	Mfr Part No GS8662R08BGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	YES	165	0.45 ns	250 MHz	GSI TECHNOLOGY	GSI Technology	GS8662R08BGD-250				3		8388608 words	8000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36		Yes		1.8 V				e1	Yes	3A991.B.2.B	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V		SYNCHRONOUS	0.425 mA		8MX8	3-STATE	1.4 mm	8				67108864 bit	PARALLEL	COMMON	STANDARD SRAM	1.7 V	15 mm	13 mm