Shop the Latest Memory at Richard Electronics - Browse Our Product List Now

Sorry! No search result....

Sign In

Sorry! No search result....

The category is 'Memory'

Memory (6)

All Manufacturers
Access Time-Max
I/O Type
Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Organization
Supply Current-Max

Supply Current-Max:
0.43 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Brand Name	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No K4H1G0838M-TCB3	Samsung	Datasheet	16000 In Stock	-	Min: 1 Mult: 1		YES	66	66	0.7 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor		K4H1G0838M-TCB3		134217728 words	128000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.92	Compliant	No	2.5 V	e0	No		Tin/Lead (Sn/Pb)	70 °C	0 °C			DRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED		0.635 mm	compliant			R-PDSO-G66	Not Qualified		2.5 V		2.5 V	COMMERCIAL							0.43 mA	700 ps	8 b	128MX8	3-STATE		8	16 b	1 Gb	0.006 A	1073741824 bit	333 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8			No
	Mfr Part No IS46DR32801A-5BBLA2-TR	ISSI	Datasheet	-	-	Min: 1 Mult: 1		YES		126	0.6 ns	200 MHz	INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc		IS46DR32801A-5BBLA2-TR		8388608 words	8000000	105 °C	-40 °C	PLASTIC/EPOXY	FBGA		BGA126,12X16,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete			5.84	Compliant	Yes	1.8 V					105 °C	-40 °C			DRAMs	CMOS	BOTTOM	BALL			0.8 mm	compliant			R-PBGA-B126	Not Qualified				1.8 V	INDUSTRIAL		1.9 V	1.7 V	32 MB			0.43 mA	600 ps	32 b	8MX32	3-STATE		32			0.008 A	268435456 bit	200 MHz		COMMON	DDR DRAM		8192	4,8	4,8
	Mfr Part No TC55V8200FT-10	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1		YES		54	10 ns		TOSHIBA CORP					2097152 words	2000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No	3.3 V	e0		3A991.B.2.A	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	GULL WING		1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified			3.465 V		COMMERCIAL	3.135 V					ASYNCHRONOUS	0.43 mA			2MX8	3-STATE	1.2 mm	8			0.004 A	16777216 bit		PARALLEL	COMMON	CACHE SRAM	3.14 V				22.22 mm	10.16 mm
	Mfr Part No UPD44324182BF5-E40-FQ1-A	Renesas	Datasheet	-	-	Min: 1 Mult: 1		YES		165	0.45 ns	250 MHz	RENESAS ELECTRONICS CORP	Renesas Electronics Corporation		UPD44324182BF5-E40-FQ1-A		2097152 words	2000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA		5.78		Yes	1.8 V			3A991				PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL		1	1 mm	unknown		165	R-PBGA-B165	Not Qualified			1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V					SYNCHRONOUS	0.43 mA			2MX18	3-STATE	1.46 mm	18			0.38 A	37748736 bit		PARALLEL	COMMON	DDR SRAM	1.7 V				17 mm	15 mm
	Mfr Part No K4H1G0838M-UCB3	Samsung	Datasheet	-	-	Min: 1 Mult: 1		YES		66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor		K4H1G0838M-UCB3	1	134217728 words	128000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.84	Compliant	Yes	2.5 V	e3	Yes		MATTE TIN	70 °C	0 °C			DRAMs	CMOS	DUAL	GULL WING	225		0.635 mm	compliant	166 MHz		R-PDSO-G66	Not Qualified		2.5 V		2.5 V	COMMERCIAL							0.43 mA	600 ps	8 b	128MX8	3-STATE		8	16 b	1 Gb	0.006 A	1073741824 bit	333 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8			No	Lead Free
	Mfr Part No 709369L9PFI	Integrated Device Technology	Datasheet	-	-	Min: 1 Mult: 1		YES		100	9 ns	66 MHz	INTEGRATED DEVICE TECHNOLOGY INC	Integrated Device Technology Inc	PN100	709369L9PFI	3	16384 words	16000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	14 X 14 MM, 1.4 MM HEIGHT, TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	TQFP	20	5.88		No	5 V	e0	No	3A991	Tin/Lead (Sn85Pb15)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	240	1	0.5 mm	not_compliant		100	S-PQFP-G100	Not Qualified	Integrated Device Technology		5.5 V	5 V	INDUSTRIAL	4.5 V				2	SYNCHRONOUS	0.43 mA			16KX18	3-STATE	1.4 mm	18			0.006 A	294912 bit		PARALLEL	COMMON	DUAL-PORT SRAM	4.5 V				14 mm	14 mm