The category is 'Memory'
Memory (10)
- All Manufacturers
- Access Time-Max
- Additional Feature
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Length
- Manufacturer
- Manufacturer Part Number
- Memory Density
- Memory Width
- Supply Current-Max
- Supply Current-Max:
0.44 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening |
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![]() | Mfr Part No MT47H64M16HR-25:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-25:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.36 | Yes | 1.8 V | e1 | TIN SILVER COPPER | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | 12.5 mm | 8 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No 709359L7BFI | Integrated Device Technology (IDT) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 18 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BF100 | 709359L7BFI | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | FPBGA-100 | BGA100,10X10,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | CABGA | NOT SPECIFIED | 5.91 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | not_compliant | 100 | S-PBGA-B100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 2 | SYNCHRONOUS | 0.44 mA | 8KX18 | 3-STATE | 1.5 mm | 18 | 0.003 A | 147456 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 10 mm | 10 mm | |||||||||||||||||||||||
![]() | Mfr Part No 709359L7PFI | Integrated Device Technology (IDT) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 18 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PN100 | 709359L7PFI | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | TQFP | 20 | 5.91 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 2 | SYNCHRONOUS | 0.44 mA | 8KX18 | 3-STATE | 1.6 mm | 18 | 0.003 A | 147456 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 14 mm | 14 mm | |||||||||||||||||||||||
![]() | Mfr Part No 709159L7PFI8 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 18 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PN100 | 709159L7PFI8 | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | TQFP | 20 | 5.9 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 2 | SYNCHRONOUS | 0.44 mA | 8KX9 | 3-STATE | 1.6 mm | 9 | 0.003 A | 73728 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 14 mm | 14 mm | ||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16FG-6IT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16FG-6IT:F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | (8 X 14) MM, PLASTIC, FBGA-60 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.68 | No | 2.5 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.44 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | |||||||||||||||||||||||
![]() | Mfr Part No MT47H64M16HR-25EIT:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-25EIT:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.15 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16TG-6TIT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 66 | 66 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-6TIT:F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 8.53 | Compliant | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.5 V | 2.7 V | 2.6 V | INDUSTRIAL | 2.3 V | 2.7 V | 2.3 V | 1 | 220 mA | SYNCHRONOUS | 0.44 mA | 700 ps | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 256 Mb | 0.004 A | 268435456 bit | 333 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | ||||||||
![]() | Mfr Part No MT47H64M16HR-25E:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-25E:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.18 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||
![]() | Mfr Part No GS8182T19BGD-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 333 MHz | GSI TECHNOLOGY | GSI Technology | GS8182T19BGD-333 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.2 | Compliant | Yes | 1.8 V | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 1MX18 | 3-STATE | 1.4 mm | 18 | 19 b | 18 Mb | 0.16 A | 18874368 bit | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||
![]() | Mfr Part No 709159L7BFI | Integrated Device Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BF100 | 709159L7BFI | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | 10 X 10 MM, 1.4 MM HEIGHT, 0.8 MM PITCH, FBGA-100 | BGA100,10X10,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | CABGA | NOT SPECIFIED | 5.9 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | not_compliant | 100 | S-PBGA-B100 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 2 | SYNCHRONOUS | 0.44 mA | 8KX9 | 3-STATE | 1.4 mm | 9 | 0.003 A | 73728 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 10 mm | 10 mm |
MT47H64M16HR-25:E
Micron
Package:Memory
Price: please inquire
709359L7BFI
Integrated Device Technology (IDT)
Package:Memory
Price: please inquire
709359L7PFI
Integrated Device Technology (IDT)
Package:Memory
Price: please inquire
709159L7PFI8
Renesas
Package:Memory
Price: please inquire
MT46V16M16FG-6IT:F
Micron
Package:Memory
Price: please inquire
MT47H64M16HR-25EIT:E
Micron
Package:Memory
Price: please inquire
MT46V16M16TG-6TIT:F
Micron
Package:Memory
Price: please inquire
MT47H64M16HR-25E:E
Micron
Package:Memory
Price: please inquire
GS8182T19BGD-333
GSI Technology
Package:Memory
Price: please inquire
709159L7BFI
Integrated Device Technology
Package:Memory
Price: please inquire
