The category is 'Memory'

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  • Supply Current-Max:

    0.44 mA

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Part Number

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Datasheet

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RoHS

Factory Lead Time

Mount

Surface Mount

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Number of Terminals

Access Time-Max

Clock Frequency-Max (fCLK)

Ihs Manufacturer

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Number of Words Code

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Subcategory

Technology

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Pin Count

JESD-30 Code

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Brand Name

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Power Supplies

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Max Supply Voltage

Min Supply Voltage

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Nominal Supply Current

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Supply Current-Max

Access Time

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Seated Height-Max

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Memory Density

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Length

Width

Radiation Hardening

MT47H64M16HR-25:E

Mfr Part No

MT47H64M16HR-25:E

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

84

0.4 ns

400 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT47H64M16HR-25:E

67108864 words

64000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

BGA

30

8.36

Yes

1.8 V

e1

TIN SILVER COPPER

AUTO/SELF REFRESH

DRAMs

CMOS

BOTTOM

BALL

260

1

0.8 mm

unknown

84

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

INDUSTRIAL

1.7 V

1

SYNCHRONOUS

0.44 mA

64MX16

3-STATE

1.2 mm

16

0.007 A

1073741824 bit

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

12.5 mm

8 mm

709359L7BFI

Mfr Part No

709359L7BFI

Integrated Device Technology (IDT) Datasheet

-

-

Min: 1

Mult: 1

YES

100

18 ns

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

BF100

709359L7BFI

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

FPBGA-100

BGA100,10X10,32

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

Obsolete

CABGA

NOT SPECIFIED

5.91

No

5 V

e0

No

EAR99

Tin/Lead (Sn63Pb37)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

225

1

0.8 mm

not_compliant

100

S-PBGA-B100

Not Qualified

Integrated Device Technology

5.5 V

5 V

INDUSTRIAL

4.5 V

2

SYNCHRONOUS

0.44 mA

8KX18

3-STATE

1.5 mm

18

0.003 A

147456 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

10 mm

10 mm

709359L7PFI

Mfr Part No

709359L7PFI

Integrated Device Technology (IDT) Datasheet

-

-

Min: 1

Mult: 1

YES

100

18 ns

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

PN100

709359L7PFI

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

LFQFP

TQFP-100

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

Obsolete

TQFP

20

5.91

No

5 V

e0

No

EAR99

Tin/Lead (Sn85Pb15)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

240

1

0.5 mm

not_compliant

100

S-PQFP-G100

Not Qualified

Integrated Device Technology

5.5 V

5 V

INDUSTRIAL

4.5 V

2

SYNCHRONOUS

0.44 mA

8KX18

3-STATE

1.6 mm

18

0.003 A

147456 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

14 mm

14 mm

709159L7PFI8

Mfr Part No

709159L7PFI8

Renesas Datasheet

-

-

Min: 1

Mult: 1

YES

100

18 ns

83 MHz

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

PN100

709159L7PFI8

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

LFQFP

14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

Obsolete

TQFP

20

5.9

No

5 V

e0

No

EAR99

Tin/Lead (Sn85Pb15)

PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

240

1

0.5 mm

not_compliant

100

S-PQFP-G100

Not Qualified

Integrated Device Technology

5.5 V

5 V

INDUSTRIAL

4.5 V

2

SYNCHRONOUS

0.44 mA

8KX9

3-STATE

1.6 mm

9

0.003 A

73728 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

14 mm

14 mm

MT46V16M16FG-6IT:F

Mfr Part No

MT46V16M16FG-6IT:F

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

60

0.7 ns

167 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT46V16M16FG-6IT:F

16777216 words

16000000

85 °C

-40 °C

PLASTIC/EPOXY

TBGA

(8 X 14) MM, PLASTIC, FBGA-60

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

Obsolete

BGA

30

5.68

No

2.5 V

e0

EAR99

Tin/Lead/Silver (Sn/Pb/Ag)

AUTO/SELF REFRESH

8542.32.00.24

DRAMs

CMOS

BOTTOM

BALL

235

1

1 mm

unknown

60

R-PBGA-B60

Not Qualified

2.7 V

2.6 V

INDUSTRIAL

2.3 V

1

SYNCHRONOUS

0.44 mA

16MX16

3-STATE

1.2 mm

16

0.004 A

268435456 bit

COMMON

DDR DRAM

8192

2,4,8

2,4,8

FOUR BANK PAGE BURST

YES

14 mm

8 mm

MT47H64M16HR-25EIT:E

Mfr Part No

MT47H64M16HR-25EIT:E

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

84

0.4 ns

400 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT47H64M16HR-25EIT:E

67108864 words

64000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

BGA

30

5.15

Yes

1.8 V

e1

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH

8542.32.00.32

DRAMs

CMOS

BOTTOM

BALL

260

1

0.8 mm

unknown

84

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

INDUSTRIAL

1.7 V

1

SYNCHRONOUS

0.44 mA

64MX16

3-STATE

1.2 mm

16

0.007 A

1073741824 bit

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

12.5 mm

8 mm

MT46V16M16TG-6TIT:F

Mfr Part No

MT46V16M16TG-6TIT:F

Micron Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

YES

66

66

0.7 ns

167 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT46V16M16TG-6TIT:F

16777216 words

16000000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

0.40 INCH, PLASTIC, TSOP-66

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

TSOP

30

8.53

Compliant

No

2.5 V

e0

EAR99

Tin/Lead (Sn/Pb)

85 °C

-40 °C

AUTO/SELF REFRESH

8542.32.00.24

DRAMs

CMOS

DUAL

GULL WING

235

1

0.65 mm

unknown

66

R-PDSO-G66

Not Qualified

2.5 V

2.7 V

2.6 V

INDUSTRIAL

2.3 V

2.7 V

2.3 V

1

220 mA

SYNCHRONOUS

0.44 mA

700 ps

16 b

16MX16

3-STATE

1.2 mm

16

15 b

256 Mb

0.004 A

268435456 bit

333 MHz

COMMON

DDR DRAM

8192

2,4,8

2,4,8

FOUR BANK PAGE BURST

YES

22.22 mm

10.16 mm

No

MT47H64M16HR-25E:E

Mfr Part No

MT47H64M16HR-25E:E

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

84

0.4 ns

400 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT47H64M16HR-25E:E

67108864 words

64000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA84,9X15,32

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Obsolete

BGA

30

5.18

Yes

1.8 V

e1

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH

8542.32.00.32

DRAMs

CMOS

BOTTOM

BALL

260

1

0.8 mm

unknown

84

R-PBGA-B84

Not Qualified

1.9 V

1.8 V

INDUSTRIAL

1.7 V

1

SYNCHRONOUS

0.44 mA

64MX16

3-STATE

1.2 mm

16

0.007 A

1073741824 bit

COMMON

DDR DRAM

8192

4,8

4,8

MULTI BANK PAGE BURST

YES

12.5 mm

8 mm

GS8182T19BGD-333

Mfr Part No

GS8182T19BGD-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

YES

165

0.45 ns

333 MHz

GSI TECHNOLOGY

GSI Technology

GS8182T19BGD-333

3

1048576 words

1000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.2

Compliant

Yes

1.8 V

e1

Yes

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

1.8 V

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

1

SYNCHRONOUS

0.44 mA

1MX18

3-STATE

1.4 mm

18

19 b

18 Mb

0.16 A

18874368 bit

PARALLEL

COMMON

DDR SRAM

1.7 V

15 mm

13 mm

No

709159L7BFI

Mfr Part No

709159L7BFI

Integrated Device Technology Datasheet

-

-

Min: 1

Mult: 1

YES

100

7.5 ns

83 MHz

INTEGRATED DEVICE TECHNOLOGY INC

Integrated Device Technology Inc

BF100

709159L7BFI

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

10 X 10 MM, 1.4 MM HEIGHT, 0.8 MM PITCH, FBGA-100

BGA100,10X10,32

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

Obsolete

CABGA

NOT SPECIFIED

5.9

No

5 V

e0

No

EAR99

Tin/Lead (Sn63Pb37)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

225

1

0.8 mm

not_compliant

100

S-PBGA-B100

Not Qualified

Integrated Device Technology

5.5 V

5 V

INDUSTRIAL

4.5 V

2

SYNCHRONOUS

0.44 mA

8KX9

3-STATE

1.4 mm

9

0.003 A

73728 bit

PARALLEL

COMMON

DUAL-PORT SRAM

4.5 V

10 mm

10 mm