The category is 'Memory'
Memory (5)
- All Manufacturers
- Access Time-Max
- Additional Feature
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Length
- Manufacturer Part Number
- Supply Current-Max
- Supply Current-Max:
0.51 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Minimum Operating Supply Voltage | Minimum Operating Temperature | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No MT46V16M16FG-5B:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16FG-5B:F | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TBGA | (8 X 14) MM, PLASTIC, FBGA-60 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.68 | No | 2.6 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.51 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16P-5BIT:F | Micron | Datasheet | 439 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16P-5BIT:F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 8.42 | Yes | 2.6 V | e3 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | INDUSTRIAL | 2.5 V | 1 | SYNCHRONOUS | 0.51 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16P-5B:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16P-5B:F | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 8.35 | Yes | 2.6 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.51 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16TG-5BIT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-5BIT:F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.68 | No | 2.6 V | e3 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | INDUSTRIAL | 2.5 V | 1 | SYNCHRONOUS | 0.51 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662D08BD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 250 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662D08BD-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | GS8662D08BD | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 0.51 mA | Pipelined | 8MX8 | 3-STATE | 1.4 mm | 8 | 21 Bit | 72 Mbit | 67108864 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm |
MT46V16M16FG-5B:F
Micron
Package:Memory
Price: please inquire
MT46V16M16P-5BIT:F
Micron
Package:Memory
Price: please inquire
MT46V16M16P-5B:F
Micron
Package:Memory
Price: please inquire
MT46V16M16TG-5BIT:F
Micron
Package:Memory
Price: please inquire
GS8662D08BD-250I
GSI Technology
Package:Memory
Price: please inquire
