The category is 'Memory'
Memory (2)
- All Manufacturers
- Access Time-Max
- Additional Feature
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Length
- Manufacturer
- Memory Density
- Supply Current-Max
- Supply Current-Max:
0.54 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Length | Width |
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 | Mfr Part No UPD44324365BF5-E40-FQ1-A | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 250 MHz | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD44324365BF5-E40-FQ1-A | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.77 | Yes | 1.8 V | 3A991 | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.54 mA | 1MX36 | 3-STATE | 1.46 mm | 36 | 0.39 A | 37748736 bit | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | 17 mm | 15 mm | ||||||||
| Mfr Part No GS8182T37BGD-375 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 375 MHz | GSI TECHNOLOGY | GSI Technology | GS8182T37BGD-375 | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.47 | Yes | 1.8 V | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.54 mA | 512KX36 | 3-STATE | 1.4 mm | 36 | 0.17 A | 18874368 bit | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm |