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The category is 'Memory'

Memory (10)

All Manufacturers
Access Time-Max
Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Operating Mode
Organization
Supply Current-Max

Supply Current-Max:
0.6 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Clock Rate	Maximum Operating Supply Voltage	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Mounting	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Alternate Memory Width	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No HY5DU283222AFP-36	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1				YES		144	0.6 ns	275 MHz		SK HYNIX INC									4194304 words	4000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA144,12X12,32	BGA144,12X12,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				Yes		2.5 V						e1		EAR99	TIN SILVER COPPER			AUTO/SELF REFRESH	8542.32.00.02			BOTTOM	BALL		1	0.8 mm	unknown	144	S-PBGA-B144	Not Qualified		2.625 V		COMMERCIAL	2.2 V			1		SYNCHRONOUS	0.6 mA				4MX32	3-STATE	1.2 mm	32			0.025 A	134217728 bit				COMMON	DDR1 DRAM			4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	12 mm	12 mm
	Mfr Part No K7R323684M-FC16	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1				YES		165	0.5 ns	166.66 MHz		SAMSUNG SEMICONDUCTOR INC									1048576 words	1000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA				No		1.8 V						e0		3A991.B.2.A	TIN LEAD			PIPELINED ARCHITECTURE	8542.32.00.41			BOTTOM	BALL		1	1 mm	unknown	165	R-PBGA-B165	Not Qualified		1.9 V		COMMERCIAL	1.7 V					SYNCHRONOUS	0.6 mA				1MX36	3-STATE	1.4 mm	36			0.27 A	37748736 bit			PARALLEL	SEPARATE	QDR SRAM	1.7 V							17 mm	15 mm
	Mfr Part No HM67G1866BP-7	Hitachi Ltd	Datasheet	-	-	Min: 1 Mult: 1				YES		119	4 ns			HITACHI LTD									65536 words	64000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Contact Manufacturer					No								e0		3A991.B.2.A	Tin/Lead (Sn/Pb)				8542.32.00.41			BOTTOM	BALL			1.27 mm	unknown		R-PBGA-B119	Not Qualified				COMMERCIAL						SYNCHRONOUS	0.6 mA				64KX18	3-STATE		18				1179648 bit			PARALLEL	COMMON	LATE-WRITE SRAM	3.2 V
	Mfr Part No WS1M32-20G3M	Microchip	Datasheet	-	-	Min: 1 Mult: 1				YES		84	20 ns			WHITE ELECTRONIC DESIGNS CORP	White Electronic Designs Corp	WS1M32-20G3M							1048576 words	1000000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	QFP	28 X 28 MM, CERAMIC, QFP-84	QFP84,1.2SQ,50	SQUARE	FLATPACK	Transferred		NOT SPECIFIED	5.72		No		5 V						e4			GOLD			USER CONFIGURABLE AS 4M X 8		SRAMs	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	1.27 mm	unknown		S-CQFP-G84	Not Qualified		5.5 V	5 V	MILITARY	4.5 V					ASYNCHRONOUS	0.6 mA				1MX32		4.57 mm	32			0.12 A	33554432 bit			PARALLEL		SRAM MODULE	4.5 V	16						27.18 mm	27.18 mm
	Mfr Part No AS8S512K32Q-25	Micross Components	Datasheet	-	-	Min: 1 Mult: 1				YES		68	25 ns			MICROSS COMPONENTS									524288 words	512000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	QFP	QFP, QFP68,.99SQ,50	QFP68,.99SQ,50	SQUARE	FLATPACK	Active	QFP				No		5 V						e0	No	3A001.A.2.C	TIN LEAD			TTL COMPATIBLE INPUTS/OUTPUTS	8542.32.00.41			QUAD	GULL WING		1	1.27 mm	compliant	68	S-CQFP-G68	Not Qualified		5.5 V		MILITARY	4.5 V					ASYNCHRONOUS	0.6 mA				512KX32	3-STATE	3.937 mm	32			0.02 A	16777216 bit			PARALLEL	COMMON	SRAM MODULE	2 V							22.352 mm	22.352 mm
	Mfr Part No R1Q3A3618BBG-50R	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1				YES		165	0.4 ns	200 MHz		RENESAS TECHNOLOGY CORP						1			2097152 words	2000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA				No		1.8 V							No	3A991.B.2.A					8542.32.00.41			BOTTOM	BALL		1	1 mm	unknown	165	R-PBGA-B165	Not Qualified		1.9 V		COMMERCIAL	1.7 V					SYNCHRONOUS	0.6 mA				2MX18	3-STATE	1.46 mm	18			0.34 A	37748736 bit			PARALLEL	SEPARATE	QDR SRAM	1.7 V							17 mm	15 mm
	Mfr Part No IS61NVP25672-250B1	ISSI	Datasheet	704 In Stock	-	Min: 1 Mult: 1		10 Weeks		YES		209	2.6 ns	250 MHz		INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS61NVP25672-250B1				3			262144 words	256000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY	Active	BGA	10	5.57		No		2.5 V						e0	No	3A991.B.2.A	Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	240	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V					SYNCHRONOUS	0.6 mA				256KX72	3-STATE	1.95 mm	72			0.06 A	18			PARALLEL	COMMON	ZBT SRAM	2.38 V							22 mm	14 mm
	Mfr Part No MT41J128M8JP-125:F	Micron	Datasheet	88 In Stock	-	Min: 1 Mult: 1			Surface Mount	YES	78	78	0.1 ns	800 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J128M8JP-125:F							134217728 words	128000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.64	Compliant	Yes		1.5 V						e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	95 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown	78	R-PBGA-B78	Not Qualified	1.5 V	1.575 V	1.5 V	OTHER	1.425 V	1.575 V	1.425 V	1	250 mA	SYNCHRONOUS	0.6 mA			8 b	128MX8	3-STATE	1.2 mm	8	17 b	1 Gb		1073741824 bit	1.6 GHz			COMMON	DDR DRAM			8192	8	8	MULTI BANK PAGE BURST	YES	11.5 mm	8 mm	No	Lead Free
	Mfr Part No GS8342R09BD-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks		YES		165	0.45 ns	400 MHz	DDR	GSI TECHNOLOGY	GSI Technology	GS8342R09BD-400	400 MHz	1.9 V	1.7 V		Surface Mount	9 Bit	4 MWords	4000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	Compliant	No	FBGA	1.8 V	Synchronous	1.8000 V	Commercial grade	0 to 85 °C	Bulk	e0		3A991.B.2.B	Tin/Lead (Sn/Pb)	85 °C	0 °C	PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.8 V	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V			1		SYNCHRONOUS	0.6 mA		Pipelined		4MX9	3-STATE	1.4 mm	9	20 Bit	36 Mbit	0.215 A	37748736 bit		Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V							15 mm	13 mm	No
	Mfr Part No GS8662Q18BGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		YES		165	0.45 ns	200 MHz		GSI TECHNOLOGY	GSI Technology	GS8662Q18BGD-200	200 MHz	1.9 V	1.7 V	3		18 Bit	4194304 words	4000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.34		Yes	FBGA	1.8 V		1.8000 V		0 to 85 °C		e1	Yes	3A991.B.2.B	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V					SYNCHRONOUS	0.6 mA	0.45			4MX18	3-STATE	1.4 mm	18				72			PARALLEL	SEPARATE	QDR SRAM	1.7 V							15 mm	13 mm