The category is 'Memory'
Memory (2)
- All Manufacturers
- Access Time-Max
- Additional Feature
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Length
- Memory IC Type
- Supply Current-Max
- Supply Current-Max:
0.61 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No CYD09S18V18-167BBI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 256 | 11 ns | 167 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256 | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | Obsolete | BGA | No | 1.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 8542.32.00.41 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | NOT SPECIFIED | 256 | S-PBGA-B256 | Not Qualified | 1.58 V | INDUSTRIAL | 1.42 V | 2 | SYNCHRONOUS | 0.61 mA | 512KX18 | 3-STATE | 1.7 mm | 18 | 0.22 A | 9437184 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 1.4 V | 17 mm | 17 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662Q18BD-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 200 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q18BD-200I | 200 MHz | 200 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.34 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | GS8662Q18BD | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 0.61 mA | Pipelined | 4MX18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 72 Mbit | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No |

