The category is 'Memory'
Memory (4)
- All Manufacturers
- Access Time-Max
- Clock Frequency-Max (fCLK)
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Length
- Memory Density
- Memory IC Type
- Memory Width
- Number of Functions
- Number of Words
- Supply Current-Max
- Supply Current-Max:
0.65 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Automotive | Base Product Number | Clock Frequency-Max (fCLK) | EU RoHS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Temperature-Max | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Standard Package Name | Supplier Package | Supply Voltage-Nom (Vsup) | Operating Temperature | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width |
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 | Mfr Part No HYB18H256321BF-14 | Qimonda AG | Datasheet | - | - | Min: 1 Mult: 1 | YES | 136 | 0.25 ns | 700 MHz | QIMONDA AG | 8388608 words | 8000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA136,12X17,32 | BGA136,12X17,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 2 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 136 | R-PBGA-B136 | Not Qualified | 2.1 V | OTHER | 1.9 V | 1 | SYNCHRONOUS | 0.65 mA | 8MX32 | 3-STATE | 1.2 mm | 32 | 0.235 A | 268435456 bit | COMMON | SYNCHRONOUS GRAPHICS RAM MODULE | 4096 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No R1Q2A3618BBG-40R | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 250 MHz | RENESAS TECHNOLOGY CORP | 1 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 1.8 V | No | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.65 mA | 2MX18 | 3-STATE | 1.46 mm | 18 | 0.35 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K7R321882M-FC16000 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.5 ns | No | 166.66 MHz | Not Compliant | SAMSUNG SEMICONDUCTOR INC | Ball | Samsung Semiconductor | K7R321882M-FC16000 | 3 | Surface Mount | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | 0.95 | 17 | RECTANGULAR | GRID ARRAY, LOW PROFILE | 15 | Obsolete | 165 | No | 40 | 5.92 | No | BGA | FBGA | 1.8 V | e1 | No | Obsolete | TIN SILVER COPPER | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.65 mA | 2MX18 | 3-STATE | 1.4 mm | 18 | 0.27 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | ||||||||||||||||||||||||||||
| Mfr Part No UPD44325364BF5-E40-FQ1-A | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | 165-FBGA | YES | 165-FBGA (15x17) | 165 | 0.45 ns | UPD44325364 | 250 MHz | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD44325364BF5-E40-FQ1-A | Volatile | Renesas Electronics America Inc | 1048576 words | 1000000 | 70 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | Obsolete | 5.75 | Yes | 1.8 V | 0°C ~ 70°C (TA) | - | 3A991 | 8542.32.00.41 | SRAMs | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36Mbit | SYNCHRONOUS | 250 MHz | 0.65 mA | SRAM | Parallel | 1MX36 | 3-STATE | 1.46 mm | 36 | 4ns | 0.4 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 1M x 36 | 17 mm | 15 mm |