The category is 'Memory'
Memory (3)
- All Manufacturers
- Access Time-Max
- Additional Feature
- Address Bus Width
- Clock Frequency-Max (fCLK)
- Density
- ECCN Code
- Factory Lead Time
- HTS Code
- I/O Type
- Ihs Manufacturer
- Length
- Supply Current-Max
- Supply Current-Max:
0.85 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Length | Width | Radiation Hardening |
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 | Mfr Part No GS8662Q18BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 300 MHz | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q18BGD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | 1.7 V | 0 C | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.17 | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | 1.8000 V | Commercial grade | 0 to 85 °C | GS8662Q18BGD | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 0.85 mA | 4MX18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||
| Mfr Part No GS8662Q18BGD-300T | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 300 MHz | QDR | GSI TECHNOLOGY | GSI Technology | GS8662Q18BGD-300T | 300 MHz | 1.9 V | 1.7 V | 3 | Surface Mount | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.2 | Compliant | Yes | FBGA | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Tape & Reel | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 2 | SYNCHRONOUS | 0.85 mA | Pipelined | 4MX18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||
| Mfr Part No GS8342Q36AE-250M | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 165 | 0.45 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS8342Q36AE-250M | 1048576 words | 1000000 | 125 °C | -55 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.8 | Compliant | No | 1.8 V | Bulk | 3A991.B.2.B | 125 °C | -55 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | MILITARY | 1.7 V | 2 | SYNCHRONOUS | 0.85 mA | 1MX36 | 3-STATE | 1.5 mm | 36 | 19 b | 36 Mb | 0.3 A | 36 | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | No |