The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Interface Type
  • Maximum Clock Frequency
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  • Supply Current-Max
  • Supply Voltage-Max
  • Supply Current-Max:

    115 mA, 140 mA

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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

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Maximum Operating Temperature

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Moisture Sensitivity Levels

Mounting

Mounting Styles

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Number of Words Code

Operating Temperature-Max

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Subcategory

Technology

Terminal Position

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Pin Count

JESD-30 Code

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Supply Voltage-Max (Vsup)

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Supply Voltage-Min (Vsup)

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Supply Current-Max

Access Time

Architecture

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Radiation Hardening

GS881E18CGD-200V

Mfr Part No

GS881E18CGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E18CGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS881Z18CD-200V

Mfr Part No

GS881Z18CD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z18CD-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881Z18CD

e0

No

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

not_compliant

165

R-PBGA-B165

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

GS88018CGT-200V

Mfr Part No

GS88018CGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-200V

200 MHz

200 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.3

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88018CGT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

19 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS882Z18CGB-200V

Mfr Part No

GS882Z18CGB-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

200 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS882Z18CGB

NBT

Memory & Data Storage

119

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Commercial

SRAM

GS88118CGD-200V

Mfr Part No

GS88118CGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

66

Parallel

GSI Technology

200 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

18 Bit

Details

FBGA

2.7 V

1.7 V

SyncBurst

1.8, 2.5 V

0 to 70 °C

Tray

GS88118CGD

Synchronous Burst

Memory & Data Storage

165

9 Mbit

115 mA, 140 mA

6.5@Flow-Through/3@P

512 k x 18

SRAM

9

SRAM

GS882Z18CD-200V

Mfr Part No

GS882Z18CD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

N

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS882Z18CD

NBT

Memory & Data Storage

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS881Z18CGD-200V

Mfr Part No

GS881Z18CGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z18CGD-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881Z18CGD

e1

Yes

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

GS880E18CGT-200V

Mfr Part No

GS880E18CGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS880E18CGT

DCD

Memory & Data Storage

100

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS88218CGD-200V

Mfr Part No

GS88218CGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88218CGD

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Commercial

SRAM

GS881E18CGT-200V

Mfr Part No

GS881E18CGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

SDR

Parallel

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

1.7, 2.3 V

0 C

Surface Mount

SMD/SMT

18 Bit

512 kWords

TQFP

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Commercial grade

0 to 70 °C

100

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

GS881E18CD-200V

Mfr Part No

GS881E18CD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E18CD

DCD Pipeline/Flow Through

Memory & Data Storage

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS88118CD-200V

Mfr Part No

GS88118CD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

18 Bit

N

FBGA

2.7 V

1.7 V

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88118CD

Synchronous Burst

Memory & Data Storage

165

9 Mbit

115 mA, 140 mA

6.5@Flow-Through/3@P

512 k x 18

SRAM

9

Commercial

SRAM

GS882Z18CGD-200V

Mfr Part No

GS882Z18CGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

1.7, 2.3 V

0 C

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Commercial grade

0 to 70 °C

GS882Z18CGD

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

GS882Z18CB-200V

Mfr Part No

GS882Z18CB-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

N

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS882Z18CB

NBT

Memory & Data Storage

119

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS88218CB-200V

Mfr Part No

GS88218CB-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88218CB-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88218CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88218CD-200V

Mfr Part No

GS88218CD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

1.7, 2.3 V

0 C

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Commercial grade

0 to 70 °C

GS88218CD

165

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

GS880Z18CGT-200V

Mfr Part No

GS880Z18CGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

GSI Technology

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS880Z18CGT-200V

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

524288 words

512000

70 °C

UNSPECIFIED

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.36

Details

Yes

2.7 V

1.7 V

1.8 V

NBT SRAM

Tray

GS880Z18CGT

3A991.B.2.B

NBT

70 °C

0 °C

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-XQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

512 k x 18

1.6 mm

18

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

No

GS88218CGB-200V

Mfr Part No

GS88218CGB-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88218CGB

SCD/DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

119

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

No