The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Data Rate Architecture
  • Density
  • Interface Type
  • Maximum Clock Frequency
  • Maximum Operating Supply Voltage
  • Maximum Operating Temperature
  • Memory Size
  • Minimum Operating Supply Voltage
  • Minimum Operating Temperature
  • Mounting Styles
  • Supply Current-Max
  • Supply Current-Max:

    125 mA, 135 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

Radiation Hardening

GS881E18CGT-150IV

Mfr Part No

GS881E18CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS881E18CGT-150IV

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E18CGT

e3

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS88218CGB-150IV

Mfr Part No

GS88218CGB-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88218CGB-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88218CGB

e1

Yes

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS882Z18CGD-150IV

Mfr Part No

GS882Z18CGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS882Z18CGD

NBT

Memory & Data Storage

165

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS882Z18CGB-150IV

Mfr Part No

GS882Z18CGB-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS882Z18CGB

NBT

Memory & Data Storage

119

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Industrial

SRAM

GS88118CGD-150IV

Mfr Part No

GS88118CGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88118CGD

Synchronous Burst

Memory & Data Storage

165

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Industrial

SRAM

GS88218CGD-150IV

Mfr Part No

GS88218CGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS88218CGD-150IV

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords/kB

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

Details

Yes

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88218CGD

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS881Z18CGD-150IV

Mfr Part No

GS881Z18CGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881Z18CGD

NBT

Memory & Data Storage

165

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS881Z18CGT-150IV

Mfr Part No

GS881Z18CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z18CGT-150IV

150 MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.28

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 85 °C

GS881Z18CGT

e3

Yes

3A991.B.2.B

Matte Tin (Sn)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

20 mm

14 mm

GS882Z18CD-150IV

Mfr Part No

GS882Z18CD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS882Z18CD

NBT

85 °C

-40 °C

Memory & Data Storage

165

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS88118CD-150IV

Mfr Part No

GS88118CD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88118CD

Synchronous Burst

Memory & Data Storage

165

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS881Z18CD-150IV

Mfr Part No

GS881Z18CD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881Z18CD

NBT

Memory & Data Storage

165

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS880Z18CGT-150IV

Mfr Part No

GS880Z18CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS880Z18CGT-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

UNSPECIFIED

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.36

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS880Z18CGT

3A991.B.2.B

NBT

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-XQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

1

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS88018CGT-150IV

Mfr Part No

GS88018CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-150IV

150 MHz

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.3

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88018CGT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

19 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS88218CB-150IV

Mfr Part No

GS88218CB-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

SDR

Parallel

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

512 kWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 85 °C

GS88218CB

85 °C

-40 °C

119

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

No

GS882Z18CB-150IV

Mfr Part No

GS882Z18CB-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS882Z18CB-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS882Z18CB

e0

No

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

No

GS881E18CD-150IV

Mfr Part No

GS881E18CD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E18CD

DCD Pipeline/Flow Through

Memory & Data Storage

165

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS880E18CGT-150IV

Mfr Part No

GS880E18CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

150 MHz

SDR

66

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E18CGT-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.36

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

1.7 V

SRAM

20 mm

14 mm

GS88118CGT-150IV

Mfr Part No

GS88118CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88118CGT

Synchronous Burst

Memory & Data Storage

100

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS881E18CGD-150IV

Mfr Part No

GS881E18CGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

512 kWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E18CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

165

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS88218CD-150IV

Mfr Part No

GS88218CD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS88218CD-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 85 °C

GS88218CD

e0

No

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

18 Bit

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

15 mm

13 mm

No