Shop the Latest Memory at Richard Electronics

The category is 'Memory'

Memory (31)

All Manufacturers
Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Mounting Styles
Organization
Package / Case
Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
125 mA, 150 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS880E32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	3		SMD/SMT	32 Bit	262144 words	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	125 mA, 150 mA	6.5@Flow-Through/3@P		256 k x 32	3-STATE	1.6 mm	32		SRAM		0.025 A	8		PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
Mfr Part No GS881E32CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CD				DCD Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
Mfr Part No GS880E36CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	3-STATE	1.6 mm	36		SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
Mfr Part No GS88236CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88236CD				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS881E32CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32					SRAM	8 Mbit			Commercial					SRAM
Mfr Part No GS88132CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88132CGT				Synchronous Burst						Memory & Data Storage								100							9 Mbit	1		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS881Z36CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CGD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	3		SMD/SMT	36 Bit	262144 words	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V		NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z36CGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)			IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	125 mA, 150 mA	6.5@Flow-Through/3@P		256 k x 36		1.4 mm	36		SRAM			9	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
Mfr Part No GS88036CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88036CGT-200V	200 MHz	200 MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88036CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.6 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS88136CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CGD-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88136CGD			3A991.B.2.B	Synchronous Burst				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36		SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS880Z32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100						66		Parallel			200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Details			2.7 V	1.7 V			NBT SRAM					GS880Z32CGT				NBT																					9 Mbit			125 mA, 150 mA	6.5 ns		256 k x 32
Mfr Part No GS84018CGT-166	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100	YES	100	7 ns			72	GSI TECHNOLOGY	Parallel		GS84018CGT-166	166 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	5.66	Details	Yes		3.6 V	2.3 V	3.3 V		SyncBurst				Tray	GS84018CGT			3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE			CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		R-PQFP-G100		3.6 V		COMMERCIAL	3 V	4 Mbit		SYNCHRONOUS	125 mA, 150 mA	7 ns		256 k x 18		1.6 mm	18					4718592 bit		PARALLEL		CACHE SRAM			20 mm	14 mm
Mfr Part No GS881E36CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Compliant		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CGD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit			Commercial					SRAM			No
Mfr Part No GS88132CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS88132CD-200V	200 MHz			+ 70 C						SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.16		No		2.7 V	1.7 V	1.8 V							GS88132CD			3A991.B.2.B					ALSO OPERATES AT 2.5V	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	125 mA, 150 mA	6.5 ns		256 k x 32		1.4 mm	32					9		PARALLEL		CACHE SRAM			15 mm	13 mm
Mfr Part No GS881Z32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CGT				NBT						Memory & Data Storage								100							9 Mbit	1		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32					SRAM	8 Mbit			Commercial					SRAM
Mfr Part No GS882Z36CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CD				NBT						Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS880Z36CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880Z36CGT				NBT						Memory & Data Storage								100							9 Mbit	1		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS88236CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88236CGD				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36					SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS881Z36CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns		SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V		3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Commercial grade	0 to 70 °C			e3	Yes	3A991.B.2.B		Matte Tin (Sn)	70 °C	0 °C	IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.6 mm	36	18 Bit		9 Mbit		9437184 bit	Commercial	PARALLEL		ZBT SRAM			20 mm	14 mm	No
Mfr Part No GS882Z36CB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CB-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.14	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CB	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.77 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	22 mm	14 mm	No
Mfr Part No GS881E36CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm

Memory (31)