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The category is 'Memory'

Memory (31)

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Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Mounting Styles
Organization
Package / Case
Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
125 mA, 150 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS881Z36CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CD-200V	200 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	N	No		2.7 V	1.7 V	1.8 V		NBT SRAM				Tray	GS881Z36CD	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	125 mA, 150 mA	6.5 ns		256 k x 36	1.4 mm	36		SRAM		9		PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881Z32CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CD				NBT						Memory & Data Storage								165						9 Mbit	1		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM
	Mfr Part No GS88236CB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CB-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88236CB	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.77 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS88236CGB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		42		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes			SMD/SMT	36 Bit													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS88236CGB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						9 Mbit			125 mA, 150 mA	6.5@Flow-Through/3@P		256 k x 36				SRAM		9	Commercial			SRAM
	Mfr Part No GS881E32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords												Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								100						9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
	Mfr Part No GS88032CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns		SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS88032CGT-200V	200 MHz	200 MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37		Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Commercial grade	0 to 70 °C		GS88032CGT	e3	Yes	3A991.B.2.B		Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41		CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit		9 Mbit	8388608 bit	Commercial	PARALLEL	CACHE SRAM		20 mm	14 mm
	Mfr Part No GS882Z36CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CGD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS882Z36CGB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CGB				NBT						Memory & Data Storage								119						9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM
	Mfr Part No GS881Z32CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CGD				NBT						Memory & Data Storage								165						9 Mbit	1		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM
	Mfr Part No GS88136CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns		SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C			Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.28	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Commercial grade	0 to 70 °C		GS88136CGT			3A991.B.2.B			70 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41		CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.6 mm	36	18 Bit		9 Mbit	9437184 bit	Commercial	PARALLEL	CACHE SRAM		20 mm	14 mm	No
	Mfr Part No GS881E36CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords												Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								100						9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM			No

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