Shop the Latest Memory at Richard Electronics

The category is 'Memory'

Memory (20)

All Manufacturers
Access Time
Architecture
Data Rate Architecture
Density
Interface Type
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Minimum Operating Supply Voltage
Mounting
Supply Current-Max

Supply Current-Max:
125 mA, 160 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS881Z18CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z18CGT-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881Z18CGT	e3	Yes	3A991.B.2.B	NBT	Matte Tin (Sn)			IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	1.6 mm	18	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm
Mfr Part No GS88118CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88118CD				Synchronous Burst						Memory & Data Storage								165						9 Mbit	1		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS882Z18CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z18CD				NBT						Memory & Data Storage								165						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18				SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS882Z18CGB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z18CGB				NBT						Memory & Data Storage								119						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88118CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88118CGT-200IV	200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88118CGT			3A991.B.2.B	Synchronous Burst				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	1.6 mm	8		SRAM	9 Mbit	4194304 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS881E18CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E18CD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS881Z18CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C																				165						9 Mbit	1		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit		9 Mbit		Industrial
Mfr Part No GS880Z18CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880Z18CGT				NBT		85 °C	-40 °C			Memory & Data Storage								100						9 Mbit	1		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 b	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS88218CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88218CD				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88218CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88218CGD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88218CGD	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	1.4 mm	18	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
Mfr Part No GS88218CB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88218CB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS882Z18CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	512 kWords													Compliant		FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS882Z18CGD						85 °C	-40 °C											165						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit		9 Mbit		Industrial						No
Mfr Part No GS882Z18CB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z18CB-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z18CB	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	1.77 mm	18	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS881Z18CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881Z18CD				NBT						Memory & Data Storage								165						9 Mbit	1		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS880E18CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880E18CGT				DCD						Memory & Data Storage								100						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88218CGB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88218CGB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS881E18CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E18CGD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88018CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-200IV	200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	1.6 mm	18	19 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS881E18CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E18CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100						9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 b	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS88118CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS88118CGD																		165						9 Mbit	1		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit		9 Mbit		Industrial

Memory (20)