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Memory (25)

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Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
130 mA, 155 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS880Z18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V		Commercial grade	0 to 70 °C	Tray	GS880Z18CGT				NBT						Memory & Data Storage								100							9 Mbit	1		130 mA, 155 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS840Z18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	7 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	200 MHz		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS840Z18CGT-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS840Z18CGT			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3,3.3 V	COMMERCIAL	2.3 V	4 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		256 k x 18	3-STATE	1.6 mm	18		SRAM		0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	3.14 V	SRAM	20 mm	14 mm
Mfr Part No GS84018CGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119	YES	119					84	GSI TECHNOLOGY	Parallel		GS84018CGB-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active		NOT SPECIFIED	5.66	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS84018CGB			3A991.B.2.B	Pipeline/Flow Through				IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE			CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant		R-PBGA-B119		2.7 V		COMMERCIAL	2.3 V	4 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		256 k x 18		1.99 mm	18					4718592 bit		PARALLEL		CACHE SRAM			22 mm	14 mm
Mfr Part No GS88118CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165									Parallel			200 MHz			+ 70 C						SMD/SMT																		3.6 V	2.3 V									GS88118CD																									9 Mbit			130 mA, 155 mA	6.5 ns		512 k x 18
Mfr Part No GS84018CB-200	GSI	Datasheet	-	-	Min: 1 Mult: 1		BGA-119	YES	119						GSI TECHNOLOGY	Parallel	Wieland	76.354.2528.0	200 MHz			+ 70 C						SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active		NOT SPECIFIED	5.72		No		3.6 V	2.3 V	2.5 V											3A991.B.2.B					IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE			CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant		R-PBGA-B119		2.7 V		COMMERCIAL	2.3 V	4 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		256 k x 18		1.99 mm	18					4718592 bit		PARALLEL		CACHE SRAM			22 mm	14 mm
Mfr Part No GS84018CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100	YES	100	6.5 ns				72	GSI TECHNOLOGY	Parallel		GS84018CGT-200	200 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	5.66	Details	Yes		3.6 V	2.3 V	3.3 V		SyncBurst					Tray	GS84018CGT			3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE			CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		R-PQFP-G100		3.6 V		COMMERCIAL	3 V	4 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		256 k x 18		1.6 mm	18					4718592 bit		PARALLEL		CACHE SRAM			20 mm	14 mm
Mfr Part No GS881Z18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology			72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z18CGT-200	200 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		524288 words	512000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.51	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS881Z18CGT	e3	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		COMMERCIAL	2.3 V	9 Mbit	1	SYNCHRONOUS	130 mA, 155 mA	6.5 ns		512 k x 18		1.6 mm	18	18 b	SRAM	9 Mb		9437184 bit		PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm	No
Mfr Part No GS882Z18CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165									Parallel			200 MHz			+ 70 C						SMD/SMT																		3.6 V	2.3 V									GS882Z18CGD																									9 Mbit			130 mA, 155 mA	6.5 ns		512 k x 18
Mfr Part No GS881Z18CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165									Parallel			200 MHz			+ 70 C						SMD/SMT																		3.6 V	2.3 V									GS881Z18CD																									9 Mbit			130 mA, 155 mA	6.5 ns		512 k x 18
Mfr Part No GS881Z18CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	72		Parallel	GSI Technology		200 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords													Details		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V		Commercial grade	0 to 70 °C	Tray	GS881Z18CGD				NBT Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	1		130 mA, 155 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18					SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS88018CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	200 MHz	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-200	200 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	1.7	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	0.417150 oz	Commercial grade	0 to 70 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	130 mA, 155 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18		SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS882Z18CB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology			42	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z18CB-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		524288 words	512000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	N	No		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS882Z18CB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V		COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		512 k x 18		1.77 mm	18		SRAM			9437184 bit		PARALLEL		ZBT SRAM		SRAM	22 mm	14 mm
Mfr Part No GS880E18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS880E18CGT				DCD		70 °C	0 °C			Memory & Data Storage															9 Mbit	2		130 mA, 155 mA	6.5 ns		512 k x 18				18 b	SRAM	9 Mb								SRAM			No
Mfr Part No GS88218CGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology			42		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS88218CGB				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage															9 Mbit	2		130 mA, 155 mA	6.5 ns		512 k x 18				18 b	SRAM	9 Mb								SRAM			No
Mfr Part No GS841Z18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Details			3.6 V	2.3 V			NBT SRAM					Tray	GS841Z18CGT				NBT Pipeline/Flow Through						Memory & Data Storage															4 Mbit			130 mA, 155 mA	6.5 ns		256 k x 18					SRAM									SRAM
Mfr Part No GS88118CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS88118CGT				Pipeline/Flow Through						Memory & Data Storage															9 Mbit			130 mA, 155 mA	6.5 ns		512 k x 18					SRAM									SRAM
Mfr Part No GS881E18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Compliant			3.6 V	2.3 V			SyncBurst					Tray	GS881E18CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage															9 Mbit	2		130 mA, 155 mA	6.5 ns		512 k x 18				18 b	SRAM	9 Mb								SRAM			No
Mfr Part No GS842Z18CB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	7 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	200 MHz		84	GSI TECHNOLOGY	Parallel	GSI Technology	GS842Z18CB-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		5.36		No		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS842Z18CB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	4 Mbit		SYNCHRONOUS	130 mA, 155 mA	6.5 ns		256 k x 18	3-STATE	1.99 mm	18		SRAM		0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
Mfr Part No GS842Z18CGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology			84		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT															Compliant			3.6 V	2.3 V			NBT SRAM					Bulk	GS842Z18CGB				NBT Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage															4 Mbit	2		130 mA, 155 mA	6.5 ns		256 k x 18				18 b	SRAM	4 Mb								SRAM			No
Mfr Part No GS88218CB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns					GSI TECHNOLOGY	Parallel	GSI Technology	GS88218CB-200	200 MHz			+ 70 C						SMD/SMT		524288 words	512000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	Compliant	No		3.6 V	2.3 V	2.5 V									e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)	70 °C	0 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V		COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	130 mA, 155 mA	6.5 ns		512 k x 18		1.77 mm	18	19 b		9 Mb		9437184 bit		PARALLEL		CACHE SRAM			22 mm	14 mm	No

Memory (25)