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Memory (41)

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Maximum Operating Temperature
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
140 mA, 170 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS882Z36CB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		42	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CB-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.14	N	No		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS882Z36CB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.77 mm	36		SRAM		9437184 bit		PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS880E32CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords												Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100						9 Mbit	2		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM
Mfr Part No GS881E36CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT														Compliant			3.6 V	2.3 V			SyncBurst				Tray	GS881E36CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage														9 Mbit	4		140 mA, 170 mA	6.5 ns		256 k x 36			18 b	SRAM	9 Mb					SRAM			No
Mfr Part No GS88132CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100		GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88132CGT-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	UNSPECIFIED	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.29	Details	Yes		3.6 V	2.3 V	3.3 V		SyncBurst				Tray	GS88132CGT			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-XQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.6 mm	32		SRAM		8388608 bit		SERIAL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS882Z36CGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		42	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CGB-200	200 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	4.6	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS882Z36CGB	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.77 mm	36		SRAM		9437184 bit		PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS88236CGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		42	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CGB-200	200 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS88236CGB	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.77 mm	36		SRAM		9437184 bit		PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
Mfr Part No GS842Z36CB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119								Parallel			200 MHz			+ 70 C						SMD/SMT														Compliant			3.6 V	2.3 V							Bulk							85 °C	0 °C																	4 Mbit	4		140 mA, 170 mA	6.5 ns		128 k x 36			17 b		4 Mb								No
Mfr Part No GS881Z36CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			NBT SRAM				Tray	GS881Z36CGT				NBT Pipeline/Flow Through						Memory & Data Storage														9 Mbit			140 mA, 170 mA	6.5 ns		256 k x 36				SRAM						SRAM
Mfr Part No GS881E32CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords												Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								100						9 Mbit	4		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
Mfr Part No GS84036CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS84036CGT-200	200 MHz	200 MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes	3		SMD/SMT	36 Bit	128 kWords	128000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	5.37	Details	Yes	TQFP	3.6 V	2.3 V	3.3 V	Synchronous	SyncBurst	2.5, 3.3 V		-40 to 100 °C	Tray	GS84036CGT			3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE		Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100		3.6 V	COMMERCIAL	3 V	4 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5		128 k x 36	1.6 mm	36		SRAM		4		PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS88132CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165								Parallel			200 MHz			+ 70 C						SMD/SMT																	3.6 V	2.3 V																																9 Mbit			140 mA, 170 mA	6.5 ns		256 k x 36
Mfr Part No GS88236CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CGD-200	200 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS88236CGD	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.4 mm	36		SRAM		9437184 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
Mfr Part No GS882Z36CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CGD-200	200 MHz			+ 70 C				3		SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.11		Yes		3.6 V	2.3 V	2.5 V								e1	Yes	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.4 mm	36				9437184 bit		PARALLEL	ZBT SRAM		15 mm	13 mm
Mfr Part No GS88136CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V			Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14		No	FBGA	3.6 V	2.3 V	3.3 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 70 °C					3A991.B.2.B					ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	3.6 V	COMMERCIAL	3 V	9 Mbit	1	SYNCHRONOUS	140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit		9 Mbit	9437184 bit	Commercial	SERIAL	CACHE SRAM		15 mm	13 mm
Mfr Part No GS881E36CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			SyncBurst				Tray	GS881E36CGD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage														9 Mbit	4		140 mA, 170 mA	6.5 ns		256 k x 36			18 b	SRAM	9 Mb					SRAM			No
Mfr Part No GS881E36CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200	200 MHz			+ 70 C	SDR		Yes			SMD/SMT		262144 words	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15	Compliant	No		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)	70 °C	0 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.4 mm	36	18 b	SRAM	9 Mb	9437184 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
Mfr Part No GS882Z36CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords												N		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CD				NBT Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM
Mfr Part No GS881E32CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes			SMD/SMT														Compliant			3.6 V	2.3 V			SyncBurst				Tray	GS881E32CD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage														9 Mbit	4		140 mA, 170 mA	6.5 ns		256 k x 32			18 b	SRAM	8 Mb					SRAM			No
Mfr Part No GS88136CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords												Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS88136CGD				Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	1		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36			17 Bit	SRAM	9 Mbit		Commercial			SRAM
Mfr Part No GS880Z36CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880Z36CGT-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	4.2	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880Z36CGT	e3	Yes	3A991.B.2.B	NBT	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	1	SYNCHRONOUS	140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.6 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm

Memory (41)