The category is 'Memory'
Memory (4)
- All Manufacturers
- Access Time
- Brand
- Factory Pack QuantityFactory Pack Quantity
- Interface Type
- Manufacturer
- Maximum Operating Temperature
- Memory Size
- Memory Types
- Minimum Operating Temperature
- Mounting Styles
- Package / Case
- Supply Current-Max
- Supply Current-Max:
155 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Risk Rank | RoHS | Shipping Restrictions | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | HTS Code | Subcategory | Voltage - Supply | Terminal Position | Terminal Form | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Height | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No 5962-8855206UA | Renesas Electronics America Inc | Datasheet | 10 | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.300", 7.62mm) | NO | 28-CDIP | 28 | 25 ns | 5962-8855206 | Renesas Electronics | 13 | TELEDYNE E2V (UK) LTD | Parallel | Renesas Electronics | 5962-8855206UA | + 125 C | Volatile | Renesas Electronics America Inc | - 55 C | Through Hole | 32768 words | 32000 | 125 °C | -55 °C | Tube | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | Active | 1.16 | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | 5 V | 1.203871 oz | Military grade | -55°C ~ 125°C (TA) | Tube | - | e0 | 3A001.A.2.C | Asynchronous | TIN LEAD | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 28 | R-GDIP-T28 | Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 256Kbit | ASYNCHRONOUS | 155 mA | 25 ns | SRAM | Parallel | 32 k x 8 | 3-STATE | 8 | 25ns | SRAM | 0.0008 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | SRAM | 32K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | |||||||||||||||||||
![]() | Mfr Part No 5962-8855206XA | Renesas Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP | 5962-8855206 | Renesas Electronics | 13 | Parallel | Renesas Electronics | + 125 C | Volatile | Renesas Electronics America Inc | - 55 C | Through Hole | Tube | Active | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 256Kbit | 155 mA | 25 ns | SRAM | Parallel | 32 k x 8 | 25ns | SRAM | SRAM | 32K x 8 | 1.65 mm | 37.2 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880F36CGT-5.5 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 72 | Parallel | GSI Technology | 181.8 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS880F36CGT | Flow Through | Memory & Data Storage | 100 | 9 Mbit | 4 | 155 mA | 5.5 ns | Flow-Through | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880F32CGT-5.5 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS880F32CGT | Flow Through | 70 °C | 0 °C | Memory & Data Storage | 9 Mbit | 4 | 155 mA | 5.5 ns | 256 k x 32 | 18 b | SRAM | 8 Mb | SRAM | No |
5962-8855206UA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
5962-8855206XA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
GS880F36CGT-5.5
GSI Technology
Package:Memory
Price: please inquire
GS880F32CGT-5.5
GSI Technology
Package:Memory
Price: please inquire
