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Memory (40)

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Maximum Operating Temperature
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
160 mA, 190 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS881E36CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS88236CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CD-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13		No		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS88236CD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	160 mA, 190 mA	6.5 ns		256 k x 36		1.4 mm	36		SRAM			9437184 bit		PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS88032CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS88032CGT-200I	200 MHz			+ 85 C			- 40 C		3		SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.61		Yes		3.6 V	2.3 V	2.5 V								GS88032CGT	e3	Yes	3A991.B.2.B		PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	160 mA, 190 mA	6.5 ns		256 k x 32	3-STATE	1.6 mm	32				0.045 A	8388608 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V		20 mm	14 mm
Mfr Part No GS880E36CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes	3		SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.61	Compliant	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	160 mA, 190 mA	6.5 ns		256 k x 36	3-STATE	1.6 mm	36	18 b	SRAM	9 Mb	0.045 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm	No
Mfr Part No GS88236CGB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology		42		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst					Tray	GS88236CGB				Pipeline/Flow Through						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 36					SRAM									SRAM
Mfr Part No GS880E32CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst					Tray	GS880E32CGT				DCD						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 32					SRAM									SRAM
Mfr Part No GS881Z36CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100								Parallel			200 MHz			+ 85 C			- 40 C				SMD/SMT																Compliant			3.6 V	2.3 V									GS881Z36CGT						85 °C	-40 °C																		9 Mbit	1		160 mA, 190 mA	6.5 ns		256 k x 36				18 b		9 Mb											No
Mfr Part No GS881E36CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst					Tray	GS881E36CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage															9 Mbit	4		160 mA, 190 mA	6.5 ns		256 k x 36				18 b	SRAM	9 Mb								SRAM			No
Mfr Part No GS882Z36CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																			3.6 V	2.3 V			NBT SRAM					Tray	GS882Z36CD				NBT Pipeline/Flow Through						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 36					SRAM									SRAM
Mfr Part No GS842Z36CGB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology		84		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			NBT SRAM					Tray	GS842Z36CGB				NBT Pipeline/Flow Through						Memory & Data Storage															4 Mbit			160 mA, 190 mA	6.5 ns		128 k x 36					SRAM									SRAM
Mfr Part No GS88136CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CD-200I	200 MHz		2.7, 3.6 V	+ 85 C		2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14		No	FBGA	3.6 V	2.3 V	3.3 V	Synchronous		2.5, 3.3 V		Industrial grade	-40 to 85 °C		GS88136CD			3A991.B.2.B					ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	3.6 V		INDUSTRIAL	3 V	9 Mbit	1	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36			9 Mbit		9437184 bit	Industrial	SERIAL		CACHE SRAM			15 mm	13 mm
Mfr Part No GS881E36CGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst					Tray	GS881E36CGD				DCD Pipeline/Flow Through						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 36					SRAM									SRAM
Mfr Part No GS88132CGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165								Parallel			200 MHz			+ 85 C			- 40 C				SMD/SMT																Compliant			3.6 V	2.3 V									GS88132CGD						85 °C	-40 °C																		9 Mbit	1		160 mA, 190 mA	6.5 ns		256 k x 36				17 b		9 Mb											No
Mfr Part No GS881E32CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																			3.6 V	2.3 V			SyncBurst					Tray	GS881E32CD				DCD Pipeline/Flow Through						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 32					SRAM									SRAM
Mfr Part No GS881Z36CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	100	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CD-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Compliant	No		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS881Z36CD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	not_compliant	100	R-PQFP-G100	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	9 Mbit	1	SYNCHRONOUS	160 mA, 190 mA	6.5 ns		256 k x 36		1.6 mm	36	18 b	SRAM	9 Mb		9437184 bit		PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm	No
Mfr Part No GS88236CGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	4.59	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS88236CGD	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS88132CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C		2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	32 Bit	256 kWords																FBGA	3.6 V	2.3 V		Synchronous		2.5, 3.3 V		Industrial grade	-40 to 85 °C		GS88132CD																		165							9 Mbit	1		160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit		9 Mbit			Industrial
Mfr Part No GS84036CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS84036CGT-200I	200 MHz	200 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	128 kWords	128000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	5.37	Non-Compliant	Yes	TQFP	3.6 V	2.3 V	3.3 V	Synchronous	SyncBurst	2.5, 3.3 V	0.304823 oz	Industrial grade	-40 to 100 °C	Tray	GS84036CGT			3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE		Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100		3.6 V		INDUSTRIAL	3 V	4 Mbit	4	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	128 k x 36		1.6 mm	36	17 Bit	SRAM	4 Mbit		4718592 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS88136CGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords														Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS88136CGD				Pipeline/Flow Through						Memory & Data Storage								165							9 Mbit	1		160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36				17 Bit	SRAM	9 Mbit			Industrial					SRAM
Mfr Part No GS880Z32CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			NBT SRAM						GS880Z32CGT				NBT						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 32					SRAM									SRAM

Memory (40)