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Memory (31)

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Interface Type
Maximum Clock Frequency
Maximum Operating Temperature
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
160 mA, 200 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS881E36CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36				SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88032CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100					SDR			Parallel			250 MHz	250 MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	32 Bit	256 kWords															TQFP	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS88032CGT																		100						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit		9 Mbit		Industrial
Mfr Part No GS880E32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		66		Parallel	GSI Technology		250 MHz	181.5@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes			SMD/SMT	32 Bit														Details			2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100						9 Mbit			160 mA, 200 mA	5.5@Flow-Through/3@P		256 k x 32				SRAM		8				SRAM
Mfr Part No GS882Z36CGB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z36CGB				NBT						Memory & Data Storage								119						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS880Z32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100						66		Parallel			250 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			2.7 V	1.7 V			NBT SRAM					GS880Z32CGT				NBT																				9 Mbit			160 mA, 200 mA	5.5 ns		256 k x 32
Mfr Part No GS88136CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165					SDR	66		Parallel			250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88136CD				Synchronous Burst														165						9 Mbit	1		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit		9 Mbit		Industrial
Mfr Part No GS880E36CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.5@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880E36CGT				DCD		85 °C	-40 °C			Memory & Data Storage								100						9 Mbit	2		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS881Z32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881Z32CGT				NBT						Memory & Data Storage								100						9 Mbit	1		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Industrial			SRAM
Mfr Part No GS882Z36CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z36CD	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
Mfr Part No GS881Z36CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes			SMD/SMT	36 Bit														Details			2.7 V	1.7 V			NBT SRAM	1.8, 2.5 V		-40 to 85 °C	Tray	GS881Z36CGT				NBT		85 °C	-40 °C			Memory & Data Storage								100						9 Mbit	1		160 mA, 200 mA	5.5@Flow-Through/3@P		256 k x 36			18 b	SRAM	9 Mb	9				SRAM			No
Mfr Part No GS88132CGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88132CGD				Synchronous Burst		85 °C	-40 °C			Memory & Data Storage								165						9 Mbit	1		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS881E36CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 b	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS881E32CGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Compliant	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
Mfr Part No GS88132CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88132CD				Synchronous Burst						Memory & Data Storage								165						9 Mbit	1		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88236CGB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	42		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88236CGB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Industrial			SRAM
Mfr Part No GS88136CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CGT-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88136CGT			3A991.B.2.B	Synchronous Burst				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36	1.6 mm	32	18 Bit	SRAM	9 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS88132CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		66		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			2.7 V	1.7 V			SyncBurst				Tray	GS88132CGT				Synchronous Burst						Memory & Data Storage														9 Mbit			160 mA, 200 mA	5.5 ns		256 k x 32				SRAM						SRAM
Mfr Part No GS881Z32CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881Z32CD				NBT						Memory & Data Storage								165						9 Mbit	1		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Industrial			SRAM
Mfr Part No GS881E36CGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CGD				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								165						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Industrial			SRAM			No
Mfr Part No GS88236CB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology	SDR	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CB-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88236CB	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36	1.77 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm	No

Memory (31)