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Memory (44)

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Maximum Operating Temperature
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
175 mA, 190 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS816132DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V			Surface Mount	SMD/SMT	32 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C		GS816132DGD																		165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit		18 Mbit			Commercial
Mfr Part No GS832218AB-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	7.5 ns		150 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS832218AB-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V			Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C			e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V		22 mm	14 mm
Mfr Part No GS8161E36DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DGD				DCD Pipeline/Flow Through						Memory & Data Storage								165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8161Z36DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGD-150V	150 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z36DGD			3A991.B.2.B	NBT				FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V		COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36		1.4 mm	36		SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
Mfr Part No GS816136DD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V			Surface Mount	SMD/SMT	36 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C																				165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit			Commercial
Mfr Part No GS8161E32DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V			Surface Mount	SMD/SMT	32 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 70 °C																				165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit		18 Mbit			Commercial
Mfr Part No GS8160E36DGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	150 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8160E36DGT				DCD Synchronous Burst						Memory & Data Storage								100							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8160E32DGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	150 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E32DGT				DCD Synchronous Burst						Memory & Data Storage								100							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8162Z36DGB-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology		SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGB-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DGB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V		COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36		1.99 mm	36	19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	22 mm	14 mm
Mfr Part No GS8162Z36DB-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology		SDR	21		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords													N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DB				NBT Pipeline/Flow Through						Memory & Data Storage								119							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8321E18AGD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8321E18AGD				DCD Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage								165							36 Mbit	2		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial					SRAM			No
Mfr Part No GS8322Z18AGB-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	150 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AGB-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes	3	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	Compliant	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8322Z18AGB	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm	No
Mfr Part No GS8321Z18AD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321Z18AD-150	150 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321Z18AD	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V		OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18		SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
Mfr Part No GS8161Z36DD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V			Surface Mount	SMD/SMT	36 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C																				165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit			Commercial
Mfr Part No GS8161Z32DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z32DGD-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z32DGD			3A991.B.2.B	NBT				FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V		COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32	19 Bit	SRAM	18 Mbit		33554432 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
Mfr Part No GS816236DGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DGD				Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage								165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM			No
Mfr Part No GS8161E32DD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords													Compliant		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Bulk	GS8161E32DD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 b	SRAM	18 Mbit			Commercial					SRAM			No
Mfr Part No GS8161E36DD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DD				DCD Pipeline/Flow Through						Memory & Data Storage								165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS816236DD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V			Surface Mount	SMD/SMT	36 Bit	512 kWords															FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C																				165							18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit			Commercial
Mfr Part No GS8322Z18AB-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	7.5 ns		150 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V			Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C			e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V		22 mm	14 mm

Memory (44)