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The category is 'Memory'

Memory (17)

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Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Minimum Operating Supply Voltage
Minimum Operating Temperature
Mounting Styles
Number of I/O Lines
Organization
Supply Current-Max

Supply Current-Max:
185 mA, 220 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8322Z18AGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns		200 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AGB-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C		3	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13		Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C			e1	Yes	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V		22 mm	14 mm
	Mfr Part No GS8322Z18AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	14		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AGD				NBT Pipeline/Flow Through						Memory & Data Storage								165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mb			Commercial					SRAM
	Mfr Part No GS832118AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						SDR			Parallel			200 MHz		2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C			Surface Mount	SMD/SMT	18 Bit	2 MWords															FBGA	3.6 V	2.3 V		Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C																				165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18						36 Mbit			Commercial
	Mfr Part No GS8322Z18AB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8322Z18AB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm	No
	Mfr Part No GS8321E18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD	85 °C	0 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm	No
	Mfr Part No GS832118AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832118AGD				Pipeline/Flow Through						Memory & Data Storage								165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS8320E18AGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology			18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes			SMD/SMT	18 Bit														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V		0 to 85 °C	Tray	GS8320E18AGT				Pipeline/Flow Through						Memory & Data Storage								100							36 Mbit			185 mA, 220 mA	6.5@Flow-Through/3@P		2 M x 18					SRAM			36						SRAM
	Mfr Part No GS8321E18AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AGD				DCD Pipeline/Flow Through						Memory & Data Storage								165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS832218AGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology			14		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes			SMD/SMT	18 Bit														Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		0 to 85 °C	Tray	GS832218AGB				Pipeline/Flow Through						Memory & Data Storage								119							36 Mbit			185 mA, 220 mA	6.5@Flow-Through/3@P		2 M x 18					SRAM			36						SRAM
	Mfr Part No GS832218AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832218AGD				Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage								165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial					SRAM			No
	Mfr Part No GS8321Z18AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321Z18AGD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321Z18AGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V		OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mb		37748736 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm	No
	Mfr Part No GS8322Z18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	15 mm	13 mm
	Mfr Part No GS8321Z18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321Z18AD-200	200 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321Z18AD	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V		OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18		SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
	Mfr Part No GS832218AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords													N		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832218AD				Pipeline/Flow Through						Memory & Data Storage								165							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mb			Commercial					SRAM
	Mfr Part No GS832018AGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology			18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832018AGT-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes			SMD/SMT	18 Bit	2097152 words	2000000	85 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34	Details	Yes		3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		0 to 85 °C	Tray	GS832018AGT			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	ALSO OPERATES AT 3.3; SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5@Flow-Through/3@P		2 M x 18		1.6 mm	18	21 b	SRAM	36 Mb		36		PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm	No
	Mfr Part No GS832218AB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119						SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C			Surface Mount	SMD/SMT	18 Bit	2 MWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS832218AB						85 °C	0 °C											119							36 Mbit	2		185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit		36 Mbit			Commercial								No
	Mfr Part No GS8320Z18AGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8320Z18AGT-200	200 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	1.71	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8320Z18AGT			3A991.B.2.B	NBT Pipeline/Flow Through		85 °C	0 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.6 mm	18	21 b	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	20 mm	14 mm	No