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The category is 'Memory'

Memory (18)

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Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Minimum Operating Supply Voltage
Minimum Operating Temperature
Mounting Styles
Number of I/O Lines
Operating Temperature
Supply Current-Max

Supply Current-Max:
190 mA, 195 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8162Z18DGB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z18DGB-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.27	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z18DGB	3A991.B.2.B	NBT Pipeline/Flow Through			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.99 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS816118DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	0 C		Surface Mount	SMD/SMT	18 Bit	1 MWords														TQFP	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C																	100						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit		18 Mbit		Commercial
	Mfr Part No GS816118DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords												N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816118DD		Synchronous Burst					Memory & Data Storage								165						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8162Z18DB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C		Surface Mount	SMD/SMT	18 Bit	1 MWords												Compliant		FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS8162Z18DB			85 °C	0 °C											119						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit		18 Mbit		Commercial						No
	Mfr Part No GS8161E18DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E18DGD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.29	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E18DGD	3A991.B.2.B	DCD Pipeline/Flow Through			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.4 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS8161E18DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords												Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E18DGT		DCD Pipeline/Flow Through					Memory & Data Storage								100						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS816218DB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DB-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		SMD/SMT	18 Bit	1048576 words	1000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Compliant	No		2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS816218DB	3A991.B.2.B	Pipeline/Flow Through	85 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5@Flow-Through/3@P		1 M x 18	1.99 mm	18	20 b	SRAM	18 Mb	18	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm	No
	Mfr Part No GS8160E18DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords												Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8162Z18DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords												N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z18DD		NBT Pipeline/Flow Through	85 °C	0 °C			Memory & Data Storage								165						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM			No
	Mfr Part No GS8160Z18DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z18DGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.31	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8160Z18DGT	3A991.B.2.B	NBT	85 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.6 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS816218DGB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DGB-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816218DGB	3A991.B.2.B	Pipeline/Flow Through			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.99 mm	18		SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS8161Z18DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z18DGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.26	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z18DGT	3A991.B.2.B	NBT			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.6 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS8161Z18DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z18DD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z18DD	3A991.B.2.B	NBT			FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.4 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS8161Z18DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165					SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C		Surface Mount	SMD/SMT	18 Bit	1 MWords												Compliant		FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS8161Z18DGD			85 °C	0 °C											165						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit		18 Mbit		Commercial						No
	Mfr Part No GS8161E18DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E18DD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		SMD/SMT	18 Bit	1048576 words	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.29		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E18DD	3A991.B.2.B	DCD Pipeline/Flow Through			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit		SYNCHRONOUS	190 mA, 195 mA	6.5@Flow-Through/3@P		1 M x 18	1.4 mm	18		SRAM		18	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS816218DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.25	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816218DD	3A991.B.2.B	Pipeline/Flow Through			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.4 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS816218DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords												Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816218DGD		Pipeline/Flow Through					Memory & Data Storage								165						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS816118DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816118DGD-200V	200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816118DGD	3A991.B.2.B	Synchronous Burst			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	1.4 mm	18		SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm