The category is 'Memory'

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  • Memory Size
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  • Supply Current-Max
  • Supply Current-Max:

    195 mA, 195 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Package Body Material

Package Code

Package Description

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

ECCN Code

Type

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Memory Width

Address Bus Width

Product Type

Density

Memory Density

Screening Level

Parallel/Serial

Memory IC Type

Product Category

Radiation Hardening

GS8161E18DGD-200

Mfr Part No

GS8161E18DGD-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Bulk

GS8161E18DGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

195 mA, 195 mA

6.5 ns

1 M x 18

20 b

SRAM

18 Mb

SRAM

No

GS8161E18DGT-200

Mfr Part No

GS8161E18DGT-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-200

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

1048576 words

1000000

70 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS8161E18DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

18 Mbit

SYNCHRONOUS

195 mA, 195 mA

6.5 ns

1 M x 18

18

SRAM

18874368 bit

PARALLEL

CACHE SRAM

SRAM

GS816218DD-200

Mfr Part No

GS816218DD-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

N

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

195 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM