The category is 'Memory'
Memory (14)
- All Manufacturers
- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Temperature
- Mounting Styles
- Organization
- Package / Case
- Supply Current-Max
- Supply Voltage-Max
- Supply Voltage-Min
- Supply Current-Max:
195 mA, 230 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS832118AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832118AGD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.29 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832118AGD | 3A991.B.2.B | Synchronous Burst | PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 15 mm | 13 mm | |||||||||||||||
![]() | Mfr Part No GS832218AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | N | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832218AD | Pipeline/Flow Through | Memory & Data Storage | 165 | 36 Mbit | 2 | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 21 Bit | SRAM | 36 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832218AGB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 14 | Parallel | GSI Technology | 200 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 2.7 V | 1.7 V | SyncBurst | Tray | GS832218AGB | Pipeline/Flow Through | Memory & Data Storage | 36 Mbit | 195 mA, 230 mA | 6.5 ns | 2 M x 18 | SRAM | 36 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z18AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z18AGD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | SMD/SMT | 18 Bit | LBGA, BGA165,11X15,40 | Active | BGA | Compliant | Yes | 2.7 V | 1.7 V | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Bulk | GS8321Z18AGD | Yes | NBT | 85 °C | 0 °C | Memory & Data Storage | 165 | 36 Mbit | 2 | 195 mA, 230 mA | 6.5@Flow-Through/3@P | 2 M x 18 | 21 b | SRAM | 36 Mb | 36 | Commercial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z18AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | 200 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z18AD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||||||
![]() | Mfr Part No GS832118AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832118AD-200V | 200 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.29 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832118AD | 3A991.B.2.B | Synchronous Burst | PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 1.4 mm | 18 | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 15 mm | 13 mm | |||||||||||||||||
![]() | Mfr Part No GS8320E18AGT-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | Parallel | 200 MHz | 200 MHz | 2, 2.7 V | + 70 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2.7 V | 1.7 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | 36 Mbit | 2 | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 21 Bit | 36 Mbit | Commercial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z18AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.13 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z18AD | 3A991.B.2.B | NBT | 85 °C | 0 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||
![]() | Mfr Part No GS8321E18AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E18AD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.38 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS8321E18AD | 3A991.B.2.B | Synchronous Burst | 85 °C | 0 °C | ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 15 mm | 13 mm | No | |||||||||||||
![]() | Mfr Part No GS8322Z18AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Bulk | GS8322Z18AGD | 3A991.B.2.B | NBT | 85 °C | 0 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||
![]() | Mfr Part No GS8322Z18AB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AB-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.13 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z18AB | 3A991.B.2.B | NBT | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 22 mm | 14 mm | ||||||||||
![]() | Mfr Part No GS832218AB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832218AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS8321E18AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E18AGD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.38 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS8321E18AGD | 3A991.B.2.B | Synchronous Burst | 85 °C | 0 °C | ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 15 mm | 13 mm | No | |||||||||||||
![]() | Mfr Part No GS832218AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AGD-200V | 200 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.11 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832218AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 15 mm | 13 mm |
GS832118AGD-200V
GSI Technology
Package:Memory
Price: please inquire
GS832218AD-200V
GSI Technology
Package:Memory
Price: please inquire
GS832218AGB-200V
GSI Technology
Package:Memory
Price: please inquire
GS8321Z18AGD-200V
GSI Technology
Package:Memory
Price: please inquire
GS8321Z18AD-200V
GSI Technology
Package:Memory
Price: please inquire
GS832118AD-200V
GSI Technology
Package:Memory
Price: please inquire
GS8320E18AGT-200V
GSI Technology
Package:Memory
Price: please inquire
GS8322Z18AD-200V
GSI Technology
Package:Memory
Price: please inquire
GS8321E18AD-200V
GSI Technology
Package:Memory
Price: please inquire
GS8322Z18AGD-200V
GSI Technology
Package:Memory
Price: please inquire
GS8322Z18AB-200V
GSI Technology
Package:Memory
Price: please inquire
GS832218AB-200V
GSI Technology
Package:Memory
Price: please inquire
GS8321E18AGD-200V
GSI Technology
Package:Memory
Price: please inquire
GS832218AGD-200V
GSI Technology
Package:Memory
Price: please inquire
