The category is 'Memory'

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  • Supply Voltage-Min
  • Supply Current-Max:

    200 mA, 260 mA

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Factory Lead Time

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Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

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Manufacturer Part Number

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Maximum Operating Temperature

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Minimum Operating Supply Voltage

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Number of Words Code

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Operating Temperature-Min

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Technology

Voltage - Supply

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Supply Voltage-Max (Vsup)

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Supply Voltage-Min (Vsup)

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Supply Current-Max

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Memory Interface

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Write Cycle Time - Word, Page

Address Bus Width

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Standby Current-Max

Memory Density

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Standby Voltage-Min

Product Category

Memory Organization

Length

Width

Radiation Hardening

GS881E32CD-333I

Mfr Part No

GS881E32CD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

32 Bit

256 kWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

165

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

8 Mbit

Industrial

GS88136CGT-333I

Mfr Part No

GS88136CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88136CGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

36 Bit

262144 words

256000

85 °C

-40 °C

UNSPECIFIED

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.28

Details

Yes

TQFP

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

-40 to 85 °C

Tray

GS88136CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-XQFP-G100

Not Qualified

3.6 V

INDUSTRIAL

3 V

9 Mbit

SYNCHRONOUS

200 mA, 260 mA

4.5@Flow-Through/2.5

256 k x 36

1.6 mm

36

SRAM

9

SERIAL

CACHE SRAM

SRAM

20 mm

14 mm

GS880Z32CGT-333I

Mfr Part No

GS880Z32CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

36

Parallel

333 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

NBT SRAM

GS880Z32CGT

NBT

9 Mbit

200 mA, 260 mA

4.5 ns

256 k x 32

GS880E36CGT-333I

Mfr Part No

GS880E36CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS880E36CGT

DCD

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

2

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS880Z36CGT-333I

Mfr Part No

GS880Z36CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

4.5 ns

GS880Z

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS880Z36CGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

5.23

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS880Z36CGT

e3

Yes

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

333 MHz

200 mA, 260 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

-

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

256K x 36

20 mm

14 mm

GS881Z32CGT-333I

Mfr Part No

GS881Z32CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z32CGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.53

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881Z32CGT

e3

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

1.6 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS882Z36CD-333I

Mfr Part No

GS882Z36CD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS882Z36CD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS882Z36CD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

No

GS881Z36CGT-333I

Mfr Part No

GS881Z36CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881Z36CGT

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

1

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS88236CD-333I

Mfr Part No

GS88236CD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CD-333I

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS881Z32CGD-333I

Mfr Part No

GS881Z32CGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

100

4.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS881Z32CGD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

SMD/SMT

32 Bit

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

-40 to 85 °C

Tray

GS881Z32CGD

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

165

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

200 mA, 260 mA

4.5@Flow-Through/2.5

256 k x 32

1.6 mm

32

SRAM

8

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS881E32CGT-333I

Mfr Part No

GS881E32CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

333 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

256 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E32CGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS88236CB-333I

Mfr Part No

GS88236CB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-333I

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 b

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

No

GS88032CGT-333I

Mfr Part No

GS88032CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88032CGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.61

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88032CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

9 Mbit

0.045 A

8388608 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

GS88136CGD-333I

Mfr Part No

GS88136CGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

Parallel

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

SMD/SMT

36 Bit

Compliant

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

-40 to 85 °C

GS88136CGD

85 °C

-40 °C

165

9 Mbit

1

200 mA, 260 mA

4.5@Flow-Through/2.5

256 k x 36

17 b

9 Mb

9

No

GS88132CGD-333I

Mfr Part No

GS88132CGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

256 kWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88132CGD

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

165

9 Mbit

1

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

17 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS881E32CGD-333I

Mfr Part No

GS881E32CGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS881E32CGD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.16

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881E32CGD

e1

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

No

GS88132CD-333I

Mfr Part No

GS88132CD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88132CD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.16

No

FBGA

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88132CD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

3.6 V

INDUSTRIAL

3 V

9 Mbit

1

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

32

18 Bit

SRAM

9 Mbit

8388608 bit

Industrial

SERIAL

CACHE SRAM

SRAM

15 mm

13 mm

GS882Z36CB-333I

Mfr Part No

GS882Z36CB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS882Z36CB

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

119

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS88236CGB-333I

Mfr Part No

GS88236CGB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CGB

Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS881E36CGD-333I

Mfr Part No

GS881E36CGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM