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The category is 'Memory'

Memory (8)

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Supply Current-Max:
200 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Shipping Restrictions	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Height	Length	Width	Radiation Hardening
	Mfr Part No 5962-3829409MXA	Renesas Electronics America Inc	Datasheet	-	-	Min: 1 Mult: 1			Through Hole	28-CDIP (0.600", 15.24mm)	NO	28-CDIP	28	55 ns	5962-3829409	Renesas Electronics		13	E2V TECHNOLOGIES PLC	Parallel	Renesas Electronics	5962-3829409MXA				+ 125 C	Volatile	Renesas Electronics America Inc		- 55 C				Through Hole		8192 words	8000	125 °C	-55 °C	Tube	CERAMIC, GLASS-SEALED	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	Active		5.24	N		This product may require additional documentation to export from the United States.		5.5 V	4.5 V	5 V					Military grade	-55°C ~ 125°C (TA)	Tube	-	e0		3A001.A.2.C	Asynchronous	TIN LEAD				8542.32.00.41	Memory & Data Storage		4.5V ~ 5.5V	DUAL	THROUGH-HOLE		1	2.54 mm	unknown	28	R-GDIP-T28	Not Qualified	5.5 V	5 V	MILITARY	4.5 V	64Kbit		ASYNCHRONOUS		200 mA	55 ns	SRAM	Parallel		8 k x 8	3-STATE		8	55ns		SRAM		0.02 A	65536 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	STANDARD SRAM	4.5 V	SRAM	8K x 8	1.65 mm	37.2 mm	15.24 mm
	Mfr Part No CY7C1380KV33-250AXC	Infineon Technologies	Datasheet	79 In Stock	-	Min: 1 Mult: 1			Surface Mount	100-LQFP		100-TQFP (14x20)			CY7C1380			144		Parallel			250 MHz			+ 70 C	Volatile	Infineon Technologies		0 C	Yes			SMD/SMT						Tray									Active			Details				3.6 V	3.135 V					0.032205 oz		0°C ~ 70°C (TA)	Tray	-											SRAM - Synchronous, SDR	3.135V ~ 3.6V														18 Mbit			250 MHz	200 mA	2.6 ns	SRAM	Parallel		512 k x 36				-												512K x 36
	Mfr Part No CY7C1370KV33-250AXC	Infineon Technologies	Datasheet	32 In Stock	-	Min: 1 Mult: 1			Surface Mount	100-LQFP		100-TQFP (14x20)			CY7C1370	Infineon Technologies		144		Parallel	Infineon		200 MHz			+ 70 C	Volatile	Infineon Technologies		0 C	Yes			SMD/SMT						Tray									Active			Details				3.6 V	3.135 V					0.449555 oz		0°C ~ 70°C (TA)	Tray					Synchronous						Memory & Data Storage		3.135V ~ 3.6V														18Mbit			200 MHz	200 mA	3 ns	SRAM	Parallel		512 k x 36				-		SRAM									SRAM	512K x 36
	Mfr Part No GS8160F18DGT-7.5I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100								18		Parallel						+ 100 C	SDR			- 40 C	Yes			SMD/SMT																		Details				3.6 V	2.3 V			SyncBurst					Tray	GS8160F18DGT				Flow Through																						18 Mbit				200 mA	7.5 ns				1 M x 18
	Mfr Part No GS78132AB-12I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		25 Weeks, 5 Days		BGA-119	YES		119	12 ns		GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS78132AB-12I				+ 85 C	SDR			- 40 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.23	N	No		FBGA	3.6 V	3 V	3.3 V	Asynchronous		3.3000 V		Industrial grade	-40 to 85 °C		GS78132AB	e0	No	3A991.B.2.B	Asynchronous	TIN LEAD			THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	3.6 V		INDUSTRIAL	3 V	8 Mbit	4	ASYNCHRONOUS		200 mA	12 ns				256 k x 32		1.99 mm	32		18 Bit	SRAM	8 Mbit		8388608 bit	Industrial	PARALLEL		STANDARD SRAM		SRAM			22 mm	14 mm
	Mfr Part No GS78132AGB-12I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		25 Weeks, 5 Days		BGA-119	YES		119	12 ns		GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS78132AGB-12I			3.6 V	+ 85 C	SDR		3 V	- 40 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.23	Details	Yes		FBGA	3.6 V	3 V	3.3 V	Asynchronous		3.3000 V		Industrial grade	-40 to 85 °C		GS78132AGB	e1	Yes	3A991.B.2.B	Asynchronous	TIN SILVER COPPER			THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	3.6 V		INDUSTRIAL	3 V	8 Mbit	4	ASYNCHRONOUS		200 mA	12 ns				256 k x 32		1.99 mm	32		18 Bit	SRAM	8 Mbit		8388608 bit	Industrial	PARALLEL		STANDARD SRAM		SRAM			22 mm	14 mm
	Mfr Part No GS880F36CGT-4.5I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology	SDR	36		Parallel	GSI Technology			222.2 MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords																Details			TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS880F36CGT				Flow Through						Memory & Data Storage									100							9 Mbit	4			200 mA	4.5 ns			Flow-Through	256 k x 36					18 Bit	SRAM	9 Mbit			Industrial					SRAM
	Mfr Part No GS880F32CGT-4.5I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology	SDR	36		Parallel	GSI Technology			222.2 MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords																Details			TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS880F32CGT				Flow Through		85 °C	-40 °C			Memory & Data Storage									100							9 Mbit	4			200 mA	4.5 ns			Flow-Through	256 k x 32					18 Bit	SRAM	8 Mbit			Industrial					SRAM					No