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Memory (27)

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Supply Current-Max:
205 mA, 210 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS8160E32DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords												Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E32DGT		DCD Synchronous Burst					Memory & Data Storage								100						18 Mbit	4		205 mA, 210 mA	6.5 ns		512 k x 32				SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8161E32DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E32DGD		DCD Pipeline/Flow Through					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS816236DB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	21		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DB		Pipeline/Flow Through					Memory & Data Storage								119						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8161Z36DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z36DD		NBT					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8161E32DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		18		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes		SMD/SMT														Details			2.7 V	1.7 V			NBT SRAM				Tray	GS8161E32DGT		DCD Pipeline/Flow Through					Memory & Data Storage														18 Mbit			205 mA, 210 mA	6.5 ns		512 k x 32				SRAM						SRAM
Mfr Part No GS816236DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DGD		Pipeline/Flow Through	85 °C	0 °C			Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 b	SRAM	18 Mbit		Commercial			SRAM			No
Mfr Part No GS816136DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816136DD		Synchronous Burst					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8162Z36DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.25	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DGD	3A991.B.2.B	NBT Pipeline/Flow Through			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.4 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
Mfr Part No GS816136DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816136DGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	QFP	QFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.26	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS816136DGT	3A991.B.2.B	Synchronous Burst	85 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1		compliant	100	R-PQFP-G100		2 V	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36		36	19 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM			No
Mfr Part No GS8160E36DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8160E36DGT		DCD Synchronous Burst					Memory & Data Storage								100						18 Mbit	4		205 mA, 210 mA	6.5 ns		512 k x 36				SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS816132DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		18		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		Yes		SMD/SMT														Details			2.7 V	1.7 V			SyncBurst				Tray	GS816132DGT		Synchronous Burst					Memory & Data Storage														18 Mbit			205 mA, 210 mA	6.5 ns		512 k x 32				SRAM						SRAM
Mfr Part No GS8161E32DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E32DD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E32DD	3A991.B.2.B	DCD Pipeline/Flow Through			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2 V	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32	1.4 mm	32	19 Bit	SRAM	18 Mbit	16777216 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
Mfr Part No GS8161E36DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		SMD/SMT	36 Bit													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DGT		DCD Pipeline/Flow Through					Memory & Data Storage								100						18 Mbit			205 mA, 210 mA	6.5@Flow-Through/3@P		512 k x 36			19 Bit	SRAM		18	Commercial			SRAM
Mfr Part No GS816236DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DD		Pipeline/Flow Through					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS816136DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816136DGD		Synchronous Burst					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8161Z36DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.24	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z36DGT	3A991.B.2.B	NBT			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.6 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm
Mfr Part No GS8162Z36DB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology	SDR	21		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords												N		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DB		NBT Pipeline/Flow Through					Memory & Data Storage								119						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8161E36DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords														FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DD		DCD Pipeline/Flow Through					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS816132DGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords												Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816132DGD		Synchronous Burst					Memory & Data Storage								165						18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32			19 Bit	SRAM	18 Mbit		Commercial			SRAM
Mfr Part No GS8162Z36DD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	12	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.25	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DD	3A991.B.2.B	NBT Pipeline/Flow Through			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.4 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm

Memory (27)