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Memory (27)

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Supply Current-Max

Supply Current-Max:
210 mA, 230 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS816118DD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														N			3.6 V	2.3 V			SyncBurst				Tray	GS816118DD				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS816218DD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														N			3.6 V	2.3 V			SyncBurst				Tray	GS816218DD				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8162Z72CC-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-209	YES	209	7.5 ns	GSI Technology	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z72CC-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	72 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.17	N	No	BGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8162Z72CC		No	3A991.B.2.B	NBT				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2 V	COMMERCIAL	1.7 V	18 Mbit	8	SYNCHRONOUS	210 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	256 k x 72	1.7 mm	72	18 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8162Z72CGC-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-209	YES	209	7.5 ns	GSI Technology	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z72CGC-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	Yes	3	Surface Mount	SMD/SMT	72 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	BGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8162Z72CGC	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2 V	COMMERCIAL	1.7 V	18 Mbit	8	SYNCHRONOUS	210 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	256 k x 72	1.7 mm	72	18 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS816218DB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DB-250	250 MHz			+ 70 C	SDR		Yes			SMD/SMT		1048576 words	1000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	N	No		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS816218DB			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2.7 V	COMMERCIAL	2.3 V	18 Mbit		SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1 M x 18	1.99 mm	18		SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8162Z18DGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z18DGD-250	250 MHz			+ 70 C	SDR		Yes	3		SMD/SMT		1048576 words	1000000	85 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.22	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS8162Z18DGD			3A991.B.2.B	NBT Pipeline/Flow Through		85 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	OTHER	2.3 V	18 Mbit	2	SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1 M x 18	1.4 mm	18	20 b	SRAM	18 Mb	18874368 bit		PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm	No
Mfr Part No GS816118DGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			SyncBurst				Tray	GS816118DGT				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8161Z18DGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8161Z18DGT				NBT						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8162Z72CGC-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-209	YES	209	7.5 ns	GSI Technology	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z72CGC-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	Yes	3	Surface Mount	SMD/SMT	72 Bit	256 kWords	256000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8162Z72CGC	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2.7 V	COMMERCIAL	2.3 V	18 Mbit	8	SYNCHRONOUS	210 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	256 k x 72	1.7 mm	72	18 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8161E18DGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E18DGD-250	250 MHz			+ 70 C	SDR		Yes			SMD/SMT		1048576 words	1000000	70 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.29	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS8161E18DGD			3A991.B.2.B	DCD Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	18 Mbit		SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1 M x 18	1.4 mm	18		SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
Mfr Part No GS816118DGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			SyncBurst				Tray	GS816118DGD				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage														18 Mbit	2		210 mA, 230 mA	5.5 ns		1 M x 18			20 b	SRAM	18 Mb					SRAM			No
Mfr Part No GS8161E18DGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			SyncBurst				Tray	GS8161E18DGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage														18 Mbit	2		210 mA, 230 mA	5.5 ns		1 M x 18			20 b	SRAM	18 Mb					SRAM			No
Mfr Part No GS8161E18DD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT																	3.6 V	2.3 V			SyncBurst				Tray	GS8161E18DD				DCD Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8162Z18DGB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z18DGB-250	250 MHz			+ 70 C	SDR		Yes			SMD/SMT		1048576 words	1000000	85 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.27	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	OTHER	2.3 V	18 Mbit		SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1 M x 18	1.99 mm	18		SRAM		18874368 bit		PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8160Z18DGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8160Z18DGT				NBT Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS816018DGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816018DGT-250V	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.32	Details	Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816018DGT			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	210 mA, 230 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	1.6 mm	18	21 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No
Mfr Part No GS816218DGB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	5.5 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DGB-250	250 MHz			+ 70 C						SMD/SMT		1048576 words	1000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Compliant	Yes		3.6 V	2.3 V	2.5 V						Bulk	GS816218DGB			3A991.B.2.B			85 °C	0 °C	ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2.7 V	COMMERCIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1MX18	1.99 mm	18	20 b		18 Mb	18874368 bit		PARALLEL	CACHE SRAM		22 mm	14 mm	No
Mfr Part No GS816218DGD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														Details			3.6 V	2.3 V			SyncBurst				Tray	GS816218DGD				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8162Z18DD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														N			3.6 V	2.3 V			NBT SRAM				Tray	GS8162Z18DD				NBT Pipeline/Flow Through						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
Mfr Part No GS8161Z18DD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		Yes			SMD/SMT														N			3.6 V	2.3 V			NBT SRAM				Tray	GS8161Z18DD				NBT						Memory & Data Storage														18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM

Memory (27)