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Memory (51)

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Supply Current-Max:
210 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Speed	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Data Bus Width	Organization	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Access Mode	Self Refresh	Product Category	Temperature	Memory Organization	Length	Width	Radiation Hardening
Mfr Part No W634GG8NB09I	Winbond Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1			VFBGA-78							220					1.066 GHz			+ 95 C				- 40 C				SMD/SMT																				1.575 V	1.425 V	1.5V±0.075V								W634GG8NB				SDRAM - DDR3																						4 Gbit		667 / 800 / 933 / 1066 MHz			210 mA					8 bit	512 M x 8							4Gb							C-temp, I-temp/ Automotive
Mfr Part No IS46TR16128DL-107MBLA1	Integrated Silicon Solution, Inc. (ISSI)	Datasheet	7680 In Stock	1: $6.640686 10: $6.264798 100: $5.910187 500: $5.575648 View all price	Min: 1 Mult: 1	8 Weeks	Surface Mount	BGA-96	YES	96-TWBGA (9x13)	96				190	INTEGRATED SILICON SOLUTION INC			IS46TR16128DL-107MBLA1				+ 95 C	Volatile	ISSI, Integrated Silicon Solution Inc		- 40 C	Yes	3		SMD/SMT		134217728 words	128000000	95 °C	-40 °C	Bulk	PLASTIC/EPOXY	TFBGA	TFBGA,	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active		Active	10	5.61	Details	Yes		1.575 V	1.425 V	1.35 V						-40°C ~ 95°C (TC)		IS46TR16128DL	e1			SDRAM - DDR3L	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH			SDRAM - DDR3L	1.283V ~ 1.45V	BOTTOM	BALL	260	1	0.8 mm	compliant		R-PBGA-B96			1.45 V	INDUSTRIAL	1.283 V	2 Gbit	1		SYNCHRONOUS	933 MHz	210 mA	20 ns	DRAM	Parallel		16 bit	128 M x 16	1.2 mm	16	15ns				2147483648 bit			DDR DRAM	MULTI BANK PAGE BURST	YES			128M x 16	13 mm	9 mm
Mfr Part No IS46TR16128DL-107MBLA2-TR	Integrated Silicon Solution, Inc. (ISSI)	Datasheet	24 In Stock	1: $8.334471 10: $7.862709 100: $7.417650 500: $6.997783 View all price	Min: 1 Mult: 1		Surface Mount	BGA-96		96-TWBGA (9x13)					1500								+ 105 C	Volatile	ISSI, Integrated Silicon Solution Inc		- 40 C	Yes			SMD/SMT						Tape & Reel (TR)								Active			Details			1.575 V	1.425 V							-40°C ~ 105°C (TC)	Reel	IS46TR16128DL				SDRAM - DDR3L							SDRAM - DDR3L	1.283V ~ 1.45V														2 Gbit				933 MHz	210 mA	20 ns	DRAM	Parallel		16 bit	128 M x 16			15ns												128M x 16
Mfr Part No W634GU8NB-09	Winbond Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1			VFBGA-78							220					1.066 GHz			+ 95 C				0 C				SMD/SMT																				1.45 V	1.283 V	1.283V to 1.45V								W634GU8NB				SDRAM - DDR3L																						4 Gbit		667 / 800 / 933 / 1066 MHz			210 mA					8 bit	512 M x 8							4Gb							C-temp, I-temp/ Automotive
Mfr Part No GS8162Z36DGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.22	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	0.413935 oz	Commercial grade	0 to 85 °C	Tray	GS8162Z36DGD			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified		2.7 V	COMMERCIAL	2.3 V	18 Mbit	4		SYNCHRONOUS		210 mA	6.5 ns			Flow-Through/Pipelined		512 k x 36	1.4 mm	36		19 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	ZBT SRAM			SRAM			15 mm	13 mm
Mfr Part No GS8160E36DGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		TQFP-100	YES		100	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160E36DGT-200	200 MHz			+ 85 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.78	Compliant	Yes		3.6 V	2.3 V	1.8 V		SyncBurst					Bulk	GS8160E36DGT			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100			2 V	COMMERCIAL	1.7 V	18 Mbit	4		SYNCHRONOUS		210 mA	6.5 ns					512 k x 36	1.6 mm	36		20 b	SRAM	18 Mb	18874368 bit		PARALLEL	CACHE SRAM			SRAM			20 mm	14 mm	No
Mfr Part No GS8160E32DGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100					GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR			0 C	Yes			SMD/SMT																	Compliant			3.6 V	2.3 V			SyncBurst					Bulk	GS8160E32DGT				Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage																18 Mbit	4				210 mA	6.5 ns					512 k x 32				20 b	SRAM	18 Mb							SRAM					No
Mfr Part No GS816036DGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100					GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR			0 C	Yes			SMD/SMT																	Details			3.6 V	2.3 V			SyncBurst					Tray	GS816036DGT				Pipeline/Flow Through						Memory & Data Storage																18 Mbit					210 mA	6.5 ns					512 k x 36					SRAM								SRAM
Mfr Part No GS8161E36DD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165					GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT																				3.6 V	2.3 V			SyncBurst					Tray	GS8161E36DD				DCD Pipeline/Flow Through						Memory & Data Storage																18 Mbit					210 mA	6.5 ns					512 k x 36					SRAM								SRAM
Mfr Part No GS8161Z32DD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	6.5 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z32DD-200	200 MHz			+ 70 C				0 C				SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.3	Compliant	No		3.6 V	2.3 V	2.5 V							Bulk	GS8161Z32DD			3A991.B.2.B			70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165			2.7 V	COMMERCIAL	2.3 V	18 Mbit	4		SYNCHRONOUS		210 mA	6.5 ns					512 k x 32	1.4 mm	32		19 b		18 Mb	16777216 bit		PARALLEL	ZBT SRAM						15 mm	13 mm	No
Mfr Part No GS816236DB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816236DB-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.25	N	No		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS816236DB			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119			2.7 V	COMMERCIAL	2.3 V	18 Mbit	4		SYNCHRONOUS		210 mA	6.5 ns					512 k x 36	1.99 mm	36		19 b	SRAM	18 Mb	18874368 bit		PARALLEL	CACHE SRAM			SRAM			22 mm	14 mm	No
Mfr Part No GS78132AB-10	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	25 Weeks, 5 Days		BGA-119	YES		119	10 ns				GSI TECHNOLOGY	Parallel	GSI Technology	GS78132AB-10				+ 70 C				0 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C			PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	4.85		No	FBGA	3.6 V	3 V	3.3 V	Asynchronous		3.3000 V		Commercial grade	0 to 70 °C			e0	No	3A991.B.2.B		TIN LEAD			THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.	8542.32.00.41		CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified		3.6 V	COMMERCIAL	3 V	8 Mbit	4		ASYNCHRONOUS		210 mA	10 ns					256 k x 32	1.99 mm	32		18 Bit		8 Mbit	8388608 bit	Commercial	PARALLEL	STANDARD SRAM						22 mm	14 mm
Mfr Part No GS8161Z32DGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z32DGD-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.3	Compliant	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM					Bulk	GS8161Z32DGD			3A991.B.2.B	NBT		70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165			2.7 V	COMMERCIAL	2.3 V	18 Mbit	4		SYNCHRONOUS		210 mA	6.5 ns					512 k x 32	1.4 mm	32		19 b	SRAM	18 Mb	16777216 bit		PARALLEL	ZBT SRAM			SRAM			15 mm	13 mm	No
Mfr Part No GS78132AGB-10	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119					GSI Technology		21		Parallel	GSI Technology		-		3.6 V	+ 70 C	SDR		3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords															Details		FBGA	3.6 V	3 V		Asynchronous		3.3000 V	0.726956 oz	Commercial grade	0 to 70 °C		GS78132AGB				Asynchronous		70 °C	0 °C			Memory & Data Storage									119			3.3 V				8 Mbit	4				210 mA	10 ns					256 k x 32				18 Bit	SRAM	8 Mbit		Commercial					SRAM					No
Mfr Part No GS816132DD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816132DD-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.31	N	No		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS816132DD			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165			2.7 V	COMMERCIAL	2.3 V	18 Mbit			SYNCHRONOUS		210 mA	6.5 ns					512 k x 32	1.4 mm	32			SRAM		16777216 bit		PARALLEL	CACHE SRAM			SRAM			15 mm	13 mm
Mfr Part No GS8162Z36DGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGB-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.25	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS8162Z36DGB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified		2.7 V	COMMERCIAL	2.3 V	18 Mbit			SYNCHRONOUS		210 mA	6.5 ns					512 k x 36	1.99 mm	36			SRAM		18874368 bit		PARALLEL	ZBT SRAM			SRAM			22 mm	14 mm
Mfr Part No GS8162Z36DB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DB-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.25	N	No		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS8162Z36DB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified		2.7 V	COMMERCIAL	2.3 V	18 Mbit			SYNCHRONOUS		210 mA	6.5 ns					512 k x 36	1.99 mm	36			SRAM		18874368 bit		PARALLEL	ZBT SRAM			SRAM			22 mm	14 mm
Mfr Part No GS816236DGB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816236DGB-200	200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.25	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS816236DGB			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119			2.7 V	COMMERCIAL	2.3 V	18 Mbit			SYNCHRONOUS		210 mA	6.5 ns					512 k x 36	1.99 mm	36			SRAM		18874368 bit		PARALLEL	CACHE SRAM			SRAM			22 mm	14 mm
Mfr Part No GS816136DD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165					GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT																	Compliant			3.6 V	2.3 V			SyncBurst					Bulk	GS816136DD				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage																18 Mbit	4				210 mA	6.5 ns					512 k x 36				19 b	SRAM	18 Mb							SRAM					No
Mfr Part No GS816036DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100					GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords															Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V		Commercial grade	0 to 85 °C	Tray	GS816036DGT				Pipeline/Flow Through						Memory & Data Storage									100							18 Mbit	4				210 mA	6.5 ns			Flow-Through/Pipelined		512 k x 36				20 Bit	SRAM	18 Mbit		Commercial					SRAM

Memory (51)