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Memory (40)

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Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Minimum Operating Supply Voltage
Minimum Operating Temperature
Mounting Styles
Number of I/O Lines
Organization
Supply Current-Max

Supply Current-Max:
215 mA, 250 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS8321E32AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E32AD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C		Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.38		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C		GS8321E32AD			3A991.B.2.B					ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE			CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1MX32		1.4 mm	32	20 Bit		36 Mbit		33554432 bit	Commercial	PARALLEL		CACHE SRAM			15 mm	13 mm
Mfr Part No GS8322Z36AGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AGD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.12	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8322Z36AGD			3A991.B.2.B	NBT				ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	1.7 V	SRAM	15 mm	13 mm
Mfr Part No GS8321E36AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E36AD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.23	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8321E36AD			3A991.B.2.B	Synchronous Burst				ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36		1.4 mm	36	20 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS832236AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.12	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS832236AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	15 mm	13 mm	No
Mfr Part No GS8321Z32AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165						SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C		Surface Mount	SMD/SMT	32 Bit	1 MWords														Compliant		FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS8321Z32AD						85 °C	0 °C											165							36 Mbit	4		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit		36 Mbit			Commercial								No
Mfr Part No GS832218AB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119				GSI Technology		SDR	14		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														Compliant		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk	GS832218AB				Pipeline/Flow Through		100 °C	-40 °C			Memory & Data Storage								119							36 Mbit	2		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 b	SRAM	36 Mbit			Industrial					SRAM			No
Mfr Part No GS8321Z18AD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321Z18AD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321Z18AD	e0	No	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	1.7 V	SRAM	15 mm	13 mm
Mfr Part No GS832236AGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords														Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS832236AGD				Pipeline/Flow Through						Memory & Data Storage								165							36 Mbit	4		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial					SRAM
Mfr Part No GS832218AGB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-119						SDR			Parallel			200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C		GS832218AGB																		119							36 Mbit	2		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit		36 Mbit			Industrial
Mfr Part No GS832018AGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832018AGT-200IV	200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000			PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.47	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832018AGT			3A991.B.2.B	Synchronous Burst				ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V			1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.6 mm	18		SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS832136AGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology			18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		SMD/SMT	36 Bit															Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		0 to 85 °C	Tray	GS832136AGD				Synchronous Burst						Memory & Data Storage								165							36 Mbit			215 mA, 250 mA	6.5@Flow-Through/3@P		1 M x 36					SRAM			36						SRAM
Mfr Part No GS832132AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832132AD-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS832132AD			3A991.B.2.B	Synchronous Burst				PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32		1.4 mm	32		SRAM	36 Mbit		33554432 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm
Mfr Part No GS8321E36AGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords														Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8321E36AGD				Synchronous Burst		85 °C	0 °C			Memory & Data Storage								165							36 Mbit	4		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial					SRAM			No
Mfr Part No GS8321E18AD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000			PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.38	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD			3A991.B.2.B	Synchronous Burst		100 °C	-40 °C	ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V			1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm	No
Mfr Part No GS832118AD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS832118AD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000			PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.29	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk				3A991.B.2.B			100 °C	-40 °C	PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V			1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit		36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM			15 mm	13 mm	No
Mfr Part No GS832236AB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	200 MHz		14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-200V	200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		SMD/SMT	36 Bit	1048576 words	1000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.12	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		0 to 85 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	36 Mbit		SYNCHRONOUS	215 mA, 250 mA	6.5@Flow-Through/3@P		1 M x 36	3-STATE	1.99 mm	36		SRAM		0.03 A	36		PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	22 mm	14 mm
Mfr Part No GS8320E18AGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8320E18AGT				DCD Synchronous Burst						Memory & Data Storage								100							36 Mbit	2		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Industrial					SRAM
Mfr Part No GS8321E18AGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AGD				Synchronous Burst						Memory & Data Storage								165							36 Mbit	2		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Industrial					SRAM
Mfr Part No GS832136AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords														N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS832136AD				Synchronous Burst		85 °C	0 °C			Memory & Data Storage								165							36 Mbit	4		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial					SRAM			No
Mfr Part No GS832032AGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832032AGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	4.87	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS832032AGT			3A991.B.2.B	Synchronous Burst				ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32		1.6 mm	32	20 Bit	SRAM	36 Mbit		33554432 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm

Memory (40)