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The category is 'Memory'

Memory (13)

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Access Time
Address Bus Width
Architecture
Data Rate Architecture
Density
Interface Type
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Supply Current-Max

Supply Current-Max:
215 mA, 260 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8642Z18B-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	8 ns	GSI Technology		SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z18B-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z18B	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.99 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	22 mm	14 mm
	Mfr Part No GS864018GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	8 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864018GT-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864018GT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
	Mfr Part No GS864218B-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	8 ns	GSI Technology		SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218B-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218B	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.99 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	22 mm	14 mm
	Mfr Part No GS864218B-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	8 ns	GSI Technology		SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218B-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864218B	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.99 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	22 mm	14 mm
	Mfr Part No GS8640E18GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8640Z18GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8640Z18GT				NBT Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 b	SRAM	72 Mbit			Industrial					SRAM			No
	Mfr Part No GS8640E18GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	8 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640E18GT-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.45	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT	e3	Yes	3A991.B.2.B	DCD	Matte Tin (Sn)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm	No
	Mfr Part No GS864218GB-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								119							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM			No
	Mfr Part No GS8642Z18GB-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z18GB				NBT Pipeline/Flow Through						Memory & Data Storage								119							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS864018GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	8 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864018GT-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864018GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
	Mfr Part No GS864218GB-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8642Z18GB-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119						SDR			Parallel			167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	4 MWords																FBGA	3.6 V	2.3 V		Synchronous		2.5, 3.3 V	Industrial grade	-40 to 85 °C		GS8642Z18GB																		119							72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit		72 Mbit			Industrial
	Mfr Part No GS8642Z18B-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	8 ns	GSI Technology	167 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z18B-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z18B	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18	3-STATE	1.99 mm	18	22 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm	No