The category is 'Memory'

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  • Maximum Clock Frequency
  • Supply Current-Max:

    215 mA

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Factory Lead Time

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Access Time-Max

Base Product Number

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Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

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Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

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Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

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Mounting Styles

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Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

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Package Body Material

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Part Package Code

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Reflow Temperature-Max (s)

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Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

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Typical Operating Supply Voltage

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Packaging

Series

JESD-609 Code

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Subcategory

Technology

Voltage - Supply

Terminal Position

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Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

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Supply Voltage-Min (Vsup)

Memory Size

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Supply Current-Max

Access Time

Memory Format

Memory Interface

Architecture

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Organization

Output Characteristics

Seated Height-Max

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Access Mode

Self Refresh

Product Category

Temperature

Memory Organization

Length

Width

Radiation Hardening

GS8162Z18DD-200I

Mfr Part No

GS8162Z18DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161Z18DD-200I

Mfr Part No

GS8161Z18DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z18DD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161Z18DD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

215 mA

6.5@Flow-Through/3@P

1 M x 18

1.4 mm

18

SRAM

18

Industrial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

GS8160E18DGT-200I

Mfr Part No

GS8160E18DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 100 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8160E18DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

215 mA

6.5 ns

1 M x 18

SRAM

SRAM

GS8162Z18DB-200I

Mfr Part No

GS8162Z18DB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

Parallel

200 MHz

+ 85 C

- 40 C

SMD/SMT

3.6 V

2.3 V

GS8162Z18DB

18 Mbit

215 mA

6.5 ns

1 M x 18

GS8162Z18DGD-200I

Mfr Part No

GS8162Z18DGD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGD-200I

200 MHz

+ 85 C

- 40 C

SMD/SMT

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.27

Yes

3.6 V

2.3 V

2.5 V

GS8162Z18DGD

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

215 mA

6.5 ns

1 M x 18

1.4 mm

18

18874368 bit

PARALLEL

ZBT SRAM

15 mm

13 mm

GS8161Z18DGT-200I

Mfr Part No

GS8161Z18DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z18DGT-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

215 mA

6.5 ns

1 M x 18

1.6 mm

18

SRAM

18874368 bit

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS88037CGT-250I

Mfr Part No

GS88037CGT-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

2.3 ns

250 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS88037CGT-250I

250 MHz

250 MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.24

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

GS88037CGT

e3

Yes

3A991.B.2.B

PURE MATTE TIN

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

215 mA

2.3 ns

Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

GS8320F32AGT-6.5M

Mfr Part No

GS8320F32AGT-6.5M

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

14

Parallel

+ 125 C

- 55 C

SMD/SMT

3.6 V

2.3 V

Flow Through

36 Mbit

215 mA

6.5 ns

1 M x 32

GS8320F36AGT-6.5M

Mfr Part No

GS8320F36AGT-6.5M

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

14

Parallel

+ 125 C

- 55 C

SMD/SMT

3.6 V

2.3 V

Flow Through

36 Mbit

215 mA

6.5 ns

1 M x 36

W631GG8MB11I

Mfr Part No

W631GG8MB11I

Winbond Electronics Corporation Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

VFBGA-78

YES

78-VFBGA (8x10.5)

78

W631GG8

242

WINBOND ELECTRONICS CORP

W631GG8MB11I

933 MHz

+ 95 C

Volatile

Winbond Electronics

- 40 C

Yes

SMD/SMT

134217728 words

128000000

95 °C

-40 °C

Tray

PLASTIC/EPOXY

VFBGA

VFBGA,

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Active

Obsolete

5.66

Details

Yes

1.575 V

1.425 V

1.5V±0.075V

-40°C ~ 95°C (TC)

W631GG8MB

SDRAM - DDR3

AUTO/SELF REFRESH

SDRAM - DDR3

1.425V ~ 1.575V

BOTTOM

BALL

1

0.8 mm

compliant

R-PBGA-B78

1.575 V

INDUSTRIAL

1.425 V

1 Gbit

1

667 / 800 / 933 / 1066 MHz

SYNCHRONOUS

933 MHz

215 mA

20 ns

DRAM

SSTL_15

8 bit

128 M x 8

1 mm

8

15ns

1Gb

DDR DRAM

MULTI BANK PAGE BURST

YES

C-temp, I-temp/ Automotive

128M x 8

10.5 mm

8 mm

W631GG8MB11I TR

Mfr Part No

W631GG8MB11I TR

Winbond Electronics Corporation Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

VFBGA-78

78-VFBGA (8x10.5)

W631GG8

2000

933 MHz

+ 95 C

Volatile

Winbond Electronics

- 40 C

Yes

SMD/SMT

Tape & Reel (TR)

Obsolete

Details

1.575 V

1.425 V

1.5V±0.075V

-40°C ~ 95°C (TC)

Reel

W631GG8MB

SDRAM - DDR3

SDRAM - DDR3

1.425V ~ 1.575V

1 Gbit

667 / 800 / 933 / 1066 MHz

933 MHz

215 mA

20 ns

DRAM

SSTL_15

8 bit

128 M x 8

15ns

1Gb

C-temp, I-temp/ Automotive

128M x 8

GS816018DGT-200I

Mfr Part No

GS816018DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 100 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.32

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

8

21 Bit

SRAM

18 Mbit

8388608 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS816018DGT-200IV

Mfr Part No

GS816018DGT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-200IV

200 MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.32

Compliant

Yes

TQFP

3.6 V

2.3 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Bulk

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

21 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS88237CB-250I

Mfr Part No

GS88237CB-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

2.3 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88237CB-250I

250 MHz

250 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.19

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88237CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

215 mA

Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

No

GS816218DGD-200I

Mfr Part No

GS816218DGD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Bulk

GS816218DGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

215 mA

6.5 ns

1 M x 18

20 b

SRAM

18 Mb

SRAM

No

GS816118DD-200I

Mfr Part No

GS816118DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816118DD-200I

200 MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

GS816118DD

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

No

GS816118DGT-200I

Mfr Part No

GS816118DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

Parallel

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

SMD/SMT

18 Bit

Compliant

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

85 °C

-40 °C

100

18 Mbit

2

215 mA

6.5@Flow-Through/3@P

1 M x 18

20 b

18 Mb

18

Industrial

No

GS816218DD-200I

Mfr Part No

GS816218DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Tray

GS816218DD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

215 mA

6.5 ns

1 M x 18

20 b

SRAM

18 Mb

18

SRAM

No

GS8162Z18DGB-200I

Mfr Part No

GS8162Z18DGB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGB-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.27

Compliant

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Bulk

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

1 M x 18

1.99 mm

18

20 b

SRAM

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

No

GS88237CGB-250I

Mfr Part No

GS88237CGB-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

42

Parallel

GSI Technology

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS88237CGB

SCD/DCD Pipeline

Memory & Data Storage

9 Mbit

215 mA

256 k x 36

SRAM

SRAM