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The category is 'Memory'

Memory (31)

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Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Mounting Styles
Organization
Package / Case
Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min
Interface Type
Series
Maximum Clock Frequency

Supply Current-Max:
215 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS816218DGB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology			21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DGB-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS816218DGB			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2.7 V		INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS	215 mA	6.5 ns		1 M x 18		1.99 mm	18		SRAM			18874368 bit		PARALLEL		CACHE SRAM		SRAM	22 mm	14 mm
	Mfr Part No GS8161E18DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology			36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																			3.6 V	2.3 V			SyncBurst				Tray	GS8161E18DD				DCD Pipeline/Flow Through						Memory & Data Storage															18 Mbit			215 mA	6.5 ns		1 M x 18					SRAM									SRAM
	Mfr Part No GS816218DB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology			21		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																			3.6 V	2.3 V			SyncBurst				Tray	GS816218DB				Pipeline/Flow Through						Memory & Data Storage															18 Mbit			215 mA	6.5 ns		1 M x 18					SRAM									SRAM
	Mfr Part No GS88237CB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	2.5 ns	GSI Technology	250 MHz	SDR	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS88237CB-250IV	250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.19	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88237CB	e0	No	3A991.B.2.B	SCD/DCD Pipeline	Tin/Lead (Sn/Pb)	85 °C	-40 °C	PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	215 mA		Pipelined	256 k x 36	3-STATE	1.77 mm	36	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	22 mm	14 mm	No
	Mfr Part No GS88237CGB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		SDR	42		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords														Compliant		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88237CGB				SCD/DCD Pipeline		85 °C	-40 °C			Memory & Data Storage								119							9 Mbit	2		215 mA		Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit			Industrial					SRAM			No
	Mfr Part No GS8640FZ18GT-8.0VI	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology				2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640FZ18GT				NBT						Memory & Data Storage								100							72 Mbit	1		215 mA	8 ns	Flow-Through	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS88037CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	2.5 ns		250 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS88037CGT-250IV	250 MHz	250 MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C		3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37		Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS88037CGT	e3	Yes	3A991.B.2.B		PURE MATTE TIN			PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	215 mA		Pipelined	256 k x 36	3-STATE	1.6 mm	36			9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V		20 mm	14 mm
	Mfr Part No GS8160Z18DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	TQFP-100	YES	100		GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z18DGT-200I	200 MHz		2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes			SMD/SMT	18 Bit	1 MWords	1000000			PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	1.68	Details	Yes		3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8160Z18DGT			3A991.B.2.B	NBT Pipeline/Flow Through		100 °C	-40 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant		R-PQFP-G100		2.7 V			2.3 V	18 Mbit	2	SYNCHRONOUS	215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.6 mm	18	20 b	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm	No
	Mfr Part No GS8640FZ18GT-8.0I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology			18		Parallel	GSI Technology					+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8640FZ18GT				NBT Flow Through						Memory & Data Storage															72 Mbit			215 mA	8 ns		4 M x 18					SRAM									SRAM
	Mfr Part No GS8161Z18DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	BGA-165	YES	165	6.5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z18DGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C		2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	Compliant	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Industrial grade	-40 to 85 °C	Bulk	GS8161Z18DGD			3A991.B.2.B			85 °C	-40 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		INDUSTRIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit		18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM			15 mm	13 mm	No
	Mfr Part No GS816118DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		12 Weeks, 6 Days	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816118DGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	4.76	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS816118DGD			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		INDUSTRIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm

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