The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Interface Type
  • Maximum Clock Frequency
  • Maximum Operating Temperature
  • Memory Size
  • Minimum Operating Temperature
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  • Organization
  • Package / Case
  • Supply Current-Max
  • Supply Voltage-Max
  • Supply Voltage-Min
  • Supply Current-Max:

    225 mA, 245 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

ECCN Code

Type

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Memory Density

Screening Level

Parallel/Serial

Memory IC Type

Product Category

Length

Width

Radiation Hardening

GS8161Z32DD-250V

Mfr Part No

GS8161Z32DD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Bulk

GS8161Z32DD

NBT

85 °C

0 °C

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

No

GS816118DGT-250IV

Mfr Part No

GS816118DGT-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816118DGT-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816118DGT

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

GS8162Z18DGD-250IV

Mfr Part No

GS8162Z18DGD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z18DGD-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.27

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

GS8160E32DGT-250V

Mfr Part No

GS8160E32DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8160E32DGT

DCD Synchronous Burst

Memory & Data Storage

100

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E32DGT-250V

Mfr Part No

GS8161E32DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

18

Parallel

GSI Technology

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

2.7 V

1.7 V

NBT SRAM

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

225 mA, 245 mA

5.5 ns

512 k x 32

SRAM

SRAM

GS816136DGT-250V

Mfr Part No

GS816136DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DGT-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816136DGT

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2 V

COMMERCIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

GS816118DD-250IV

Mfr Part No

GS816118DD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816118DD

Synchronous Burst

Memory & Data Storage

165

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

GS8162Z36DB-250V

Mfr Part No

GS8162Z36DB-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

21

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

N

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

119

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS816218DD-250IV

Mfr Part No

GS816218DD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816218DD-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.25

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816218DD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8161E32DGD-250V

Mfr Part No

GS8161E32DGD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E32DGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161Z18DD-250IV

Mfr Part No

GS8161Z18DD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

2.7 V

1.7 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8161Z18DD

NBT

Memory & Data Storage

165

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGD-250IV

Mfr Part No

GS8161E18DGD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS816132DGT-250V

Mfr Part No

GS816132DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

18

Parallel

GSI Technology

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

2.7 V

1.7 V

SyncBurst

Tray

GS816132DGT

Synchronous Burst

Memory & Data Storage

18 Mbit

225 mA, 245 mA

5.5 ns

512 k x 32

SRAM

SRAM

GS816236DGD-250V

Mfr Part No

GS816236DGD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS816236DGB-250V

Mfr Part No

GS816236DGB-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

SDR

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816236DGB-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816236DGB

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

2 V

COMMERCIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS8161Z18DGD-250IV

Mfr Part No

GS8161Z18DGD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 100 °C

165

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

GS8161E36DGD-250V

Mfr Part No

GS8161E36DGD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

GS8160E36DGT-250V

Mfr Part No

GS8160E36DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

250 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8160E36DGT

DCD Synchronous Burst

Memory & Data Storage

100

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS816236DD-250V

Mfr Part No

GS816236DD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

N

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816236DD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E32DD-250V

Mfr Part No

GS8161E32DD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E32DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM